The methodology and the physics behind the scaling results for 2013 tables is described in transistor roadmap projection using predictive full-band atomistic modeling which covers double gate MOSFETs over the 15 years to 2028.
Metodologija i fizika rezultata skaliranja za tablice za 2013 opisana je u transistor roadmap projection using predictive full-band atomistic modeling koji obuhvaća MOSFET-ove s dvostrukim vratima tijekom 15 godina do 2028.