The invention of the complementary metal-oxide-semiconductor (CMOS) process by Frank Wanlass in 1963, and a number of advances in CMOS technology by many workers in the semiconductor field since the work of Wanlass, have enabled the extremely dense and high-performance ICs that the industry makes today.
Izum komplementarnog procesa metal-oksid-poluvodič (CMOS) Frank Wanlass 1963, i brojni napredak u CMOS tehnologiji od strane mnogih radnika u polju poluvodiča od rada Wanlassa, omogućili su izuzetno guste i visokoučinkovite IC-ove koje industrija danas proizvodi.