Whereas a typical tunnel diode may exhibit negative differential resistance approximately between 70 mV and 350 mV, this region occurs approximately between 1.5 V and 6 V in a lambda diode due to the higher pinch-off voltages of typical JFET devices.
Hvor en typisk tunneldiode kan udvise negativ differentiel modstand omtrent mellem 70 mV og 350 mV, er dette område for lambda-dioden omtrent mellem 1,5 V og 6 V grundet de højere pinch-off spændinger i typiske JFETs.