A single-chip, multi-mode direct conversion receiver designed for GSM900, DCS 1800, PCS 1900, and UTRA/FDD WCDMA, applications is described. The low-noise amplifier uses only four on-chip inductors. The downconversion mixers include a method to improve the receiver IIP2 to over +40dBm. The baseband circuit achieves over +90dBV IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8dB in all GSM modes, and 3.5dB in WCDMA. The power consumption in all GSM modes is 42mW and in WCDMA 50mW. The silicon area is 10mm/sup 2/.
['Jussi Ryynanen', 'Kalle Kivekasl', 'Jarkko Jussila', 'Aarno Pärssinen', 'Kari Halonen']
Direct conversion receiver for GSM900, DCS1800, PCS1900, and WCDMA