A novel process corner detection circuit has been proposed in current work. The circuit uses only metal-oxide-semiconductor (MOS) transistors to precisely detect process corner. Such approach allows reducing circuit's area and current consumption. Information on corner is represented in digital form (code), which allows easily using the digital signal for both testing and compensation of process variation (PV) in other blocks. The circuit can be modified to monitor not only parameter variation of n-type and p-type transistors, but also their combinations.
['Davit Mirzoyan', 'Ararat Khachatryan']
A novel process corner detection circuit