RF characteristics for sub-0.1μm MOSFETs such as fT, fmax and their variations are estimated from the DC and capacitance parameters. A new RF gate resistance model with a silicide-polysilicon interface resistance is a key factor to estimate the RF characteristics precisely. The variations of RF characteristics are also inferred from correlation coefficient between the RF parameters and the DC and capacitance parameters. This method is effective in monitoring RF characteristics and their variations for scaled-down, RF/mixed-signal circuits at the chip fabrication.
['Akira Tanabe', 'K. Hijioka', 'Yoshihiro Hayashi']
A Novel Monitoring Method of RF Characteristics Variations for Sub-0.1μm MOSFETs with Precise Gate-resistance Model