A novel 2-bit nano-silicon based non-volatile memory is proposed to double memory density. The thin film structure exhibits two conduction states (ON and OFF) at different voltages and has a cost-effective structure. The structure utilizes the good electrical properties of fluorinated SiO"2 thin films, together with the bi-stable properties conferred by the nano-silicon particles therein embedded. A polymeric layer of 8-hydroxyquinoline aluminum salt (Alq3) further deposited on the top of the nano-particle layer through chemical evaporation and a silver paste contact determines the final structure. The positive 0-15V scan reveals two discontinuities with an ON/OFF ratio of 10^4-10^5 (2-4V) and OFF/ON of 10^3 (12.5-13.0V). The reverse scan displays again two distinct thresholds, range of 10.5-11.0V (ON/OFF ratio 10^-^3), respectively, 0.5V (OFF/ON ratio 10^-^5-10^-^4).
['Antonela Dima', 'F. G. Della Corte', 'Charlotte Williams', 'K. G. Watkins', 'G. Dearden', "Nicole O'hare", 'M. Casalino', 'Ivo Rendina', 'M. Dima']
Silicon nano-particles in SiO2 sol-gel film for nano-crystal memory device applications