Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O 2  = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175° C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were characterized by four-point probe method and transmittance measurements. It was found that reducing oxygen concentration the sheet resistance decreases. For samples fabricated in oxygen atmosphere the transmittance reached values above 90 %. However, the sample with post-deposition thermal treatment at T = 300 °C in oxygen atmosphere shows the best transmittance (95 %) and lowest value of sheet resistance (R s = 27 ohms-square). Finally, the transparent conducting oxides were applied in hybrid organic-inorganic photovoltaic structures. The best power conversion efficiency in AM-1 sunlight η = 2.13 % was obtained for a structure with ITO fabricated at oxygen concentration %O 2  = 0.25 % in comparison with an efficiency η = 1.87 % obtained for a structure fabricated with commercial ITO.
['S. Vazquez', 'Antonio Olivares', 'Ismael Cosme', 'S. Mansurova', 'A. Kosarev', 'A. Itzmoyot']
Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere