SRAM Physical Unclonable Function (PUF) makes use of efficient silicon fabrication process where duplication of exact replica devices is difficult. One of the major issues with SRAM-PUF is the reliability and uniformity of the start-up pattern with environmental fluctuations. This paper presents a technique for improving uniformity (distribution of 1's & 0's) and reliability (variations in power-up patterns) of SRAM-PUF utilizing aging effects (mainly NBTI). The proposed technique maintains the uniformity of SRAM-PUF by controlling the polarity of the aging in SRAM arrays. The reliability is controlled by further injecting aging to the SRAM arrays after achieving target uniformity.
['A. Garg', 'Tony Tae-Hyoung Kim']
Design of SRAM PUF with improved uniformity and reliability utilizing device aging effect