Due mainly to the thermal budget of CMOS devices, bonding techniques compatible with CMOS processing are limited to direct oxide bonding, metal bonding, adhesive bonding, and various hybrids of those methods. In order to facilitate thin wafer processing with existing fab equipment, we developed total solutions for temporary bonding and debonding of carrier wafers. When it comes to TSV integration, the temporary bonding process based on a spin-on adhesive is becoming the industry standard over that with a lamination tape due to better edge protection, compatibility with topographic surfaces, and better stability at higher process temperatures. The benefits with a newly developed spin-on process include temperature stability over 250°C, compatibility with bumped surfaces, short debonding time, easy thermal release, slide-off debonding, and easy cleanup with polar solvents. It is being proven that our temporary bonding and debonding techniques offer time and cost efficiency for TSV integration processes utilizing existing and established equipment and technologies.
['Bioh Kim', 'Thorsten Matthias', 'Markus Wimplinger', 'Paul Lindner']
Advanced wafer bonding solutions for TSV integration with thin wafers