In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.
['Hassen Aziza', 'M. Bocquet', 'Mathieu Moreau', 'Jean Michel Portal']
Single-ended sense amplifier robustness evaluation for OxRRAM technology