The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
['Dong-Shong Liang', 'Yaw-Hwang Chen', 'Chun-Min Wen', 'Chun-Da Tu', 'Kwang-Jow Gan', 'Cher-Shiung Tsai']
The Design of MOS-NDR-Based Cellular Neural Network