An all n-p-n highly linear wide-bandwidth bipolar transconductor (G m ) stage is presented based on a variation of Caprio's quad. The high-frequency (HF) linearity of the improved G m  cell is examined by a Volterra analysis. The improved G m  cell has a higher input voltage swing range than other approaches
['Hsuan-Yu Marcus Pan', 'Lawrence E. Larson']
Highly Linear Bipolar Transconductor For Broadband High-Frequency Applications with Improved Input Voltage Swing