The microwave plasma chemical vapor deposition (MPCVD) method has been widely used in several industry applications. The plasma modeling and control issues play an important role in MPCVD systems. One of crucial factors in controlling plasma shape and position is the tunable reflected microwave power of the MPCVD system. However, modeling the tunable reflected power of microwave plasma is highly complex and remains as a poorly understandable information. In this paper, the reflected power distribution corresponding to the adjustable electromagnetic field can be reduced as a 2D scattered plot by using 2D histogram projection and then be modeled in a mathematical expression through the 2D Gaussian mixture modeling (GMM). The estimated results of calculation show that microwave power data can be simplified to be a linear combination of some Gaussian functions that provides a predictable and controlled basis for tuning manufacturing parameters and plasma sharp in a real-time control.
['Chii-Ruey Lin', 'Chun-Hsi Su', 'Chih-Ming Hsu', 'June-Yen Jhuang', 'Chun-Yeon Lin']
A calculation of microwave power in a MPCVD system using 2-D gaussian mixture modeling