This paper discusses the design and simulation of Low Noise Amplifier (LNA) for 4G LTE communication system at 2.3 GHz. The design and simulation are performed on Advance Design System (ADS) design suite. Low noise transistor ATF-54143 with minimum noise figure of 0.46 dB is used with class A bias circuit. Drain current and drain to source voltage are measured to be 28.07 mA and 2.77 volt with supply voltage of 5 volt. Noise figure as low as 0.9 dB is used to compensate the 13.8 dB gain of the amplifier. Simulation with QPSK modulation and channel modeling is performed and yield the same transmitted and received data.
['Ahmad Sidik', 'Maulana Yusuf Fathany', 'Basuki Rahmatul Alam']
Design of broadband Low Noise Amplifier (LNA) 4G LTE TDD 2.3 GHz for modem application