Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.
['Marta M. Hernando', 'Arturo Fernández', 'Jorge García', 'Diego G. Lamar', 'M. Rascon']
Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction