In the early stages of IC development, only very few circuit measurements are available. To build up confidence in the circuit simulations and to detect omissions in the simulation chain, it is very advantageous if process-control module (PCM) measurements from a specific wafer can be used to center the nominal compact (SPICE) model parameter set (measured on the ‘golden’ wafer) to this wafer. For older technologies and compact models it is often possible to directly calculate a compact model parameter set from a limited amount of PCM measurements. However, for advanced technologies (due to e.g. pocket implants) and advanced compact models (due to the surface-potential formulation) this ‘direct calculation’ is no longer possible. Here, we present a novel alternative method to connect compact model parameters to PCM measurements for a surface-potential based model and an advanced process technology.
['B. De Vries', 'A.J. Scholten', 'P. Rommers', 'M. Stoutjesdijk', 'D.B.M. Klaassen']
Wafer-specific centering of compact transistor model parameters for advanced technologies and models