The paper deals with characterization of various MagFET structures in alternating magnetic field in frequency range from 10 Hz to 10 kHz. 3D numerical simulation of MagFET structures has been used to investigate influence of MagFET geometry to the magnetic field sensitivity. Rectangle shaped structures of various dimensions were fabricated in standard 1mum two metal CMOS technology. MagFET devices were characterized for applications as a sensor of external magnetic fields and also as a current monitor. The measurement results show dependence of MagFETs sensitivity on structure geometry, channel type and biasing conditions.
['Martin Daricek', 'Martin Donoval', 'A. Satka', 'Tomas Kosik']
Characterization of MagFET structures