In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools, iTEM can estimate the interconnect temperature rise due to joule heating and heat conduction from the substrate using a newly developed lumped thermal model. By including the temperature effect, iTEM provides much more accurate electromigration reliability diagnosis. Moreover, it is computationally efficient, and can analyze circuit layouts containing tens of thousands of transistors on a desktop workstation.
['Chin-Chi Teng', 'Yi-Kan Cheng', 'Elyse Rosenbaum', 'Sung-Mo Kang']
iTEM: a temperature-dependent electromigration reliability diagnosis tool