In order to investigate the systematic intra-die variations, the intra-die threshold voltage and on-current variations are measured thanks to 4-mm 4000times1 transistor arrays with 1 mum transistor-pitch in a 90 nm CMOS technology, achieving the widest spatial distribution range. The spatial frequency analysis of the variations indicates that both variations are random across 4 mm. The dependence of both variations on body bias is also measured and the relationships between threshold voltage variations and on-current variations are analyzed by using the alpha-power law model.
['David Levacq', 'Takuya Minakawa', 'Makoto Takamiya', 'Takayasu Sakurai']
A Wide Range Spatial Frequency Analysis of Intra-Die Variations with 4-mm 4000 × 1 Transistor Arrays in 90nm CMOS