This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/°C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/°C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
['Archit Giridhar', 'Fabrice Verjus', 'F. Marty', 'Alain Bosseboeuf', 'Tarik Bourouina']
Electrostatically-Driven Resonator on Soi with Improved Temperature Stability