This paper presents a computationally efficient technique for accurate analysis of floating-body partially depleted SOI (PD/SOI) CMOS circuits in steady state operating mode. The basic algorithm and techniques to improve the convergence and reduce simulation time are described. The methodology provides over 2 orders of magnitude improvement in simulation time compared with straightforward circuit simulation for large multiple-input circuit macros and SRAMs, thus allowing accurate analysis/assessment of the history effect in PD/SOI CMOS circuits and body voltage and Vt drifts in sensitive circuits.
['Rajiv V. Joshi', 'K.E. Kroell', 'Ching-Te Chuang']
A novel technique for steady state analysis for VLSI circuits in partially depleted SOI