This paper shows measurement results of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, wire coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is most dominant in CMOS chips and the total isolation becomes less than −50 dB with more than 0.4 mm PA-to-LNA distance.
['Ryo Minami', 'JeeYoung Hong', 'Daisuke Imanishi', 'Kenichi Okada', 'Akira Matsuzawa']
Measurement of integrated PA-to-LNA isolation on Si CMOS chip