We designed, fabricated and tested four kinds of nonvolatile memories in a commercially-available 0.5mum silicon-on-sapphire CMOS process. The device tested are PMOS and NMOS with MOS- and MIM-based floating gates. We report on the test results of all four devices and demonstrate that MIM-based NMOS floating gate cells can be use to achieve a threshold shift of 0.4V and no significant decay of threshold voltage after small retentions tests of more than 100 s.
['Chun-Chen Yeh', 'Eugenio Culurciello']
Nonvolatile Flash Memories in Silicon-on-sapphire CMOS