A charge pump topology with enhanced driving capability for very low voltage applications is presented. The proposed scheme is able to operate with a supply voltage as low as 900 mV and ensures high voltage gain, high driving capability, and high power efficiency over the whole current range. A suitable boosting circuit allows adequately low on-resistance of transfer devices while still limiting the impact of parasitic capacitances. Simulation results show the effectiveness of the proposed approach.
['Laura Gobbi', 'Alessandro Cabrini', 'Guido Torelli']
High-Efficiency CMOS Charge Pump