Abstract In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.
['Hsien-Chin Chiu', 'Ji-Fan Chi', 'Hsuan-Ling Kao', 'Chia-Yi Chu', 'Kuan-Liang Cho', 'Feng-Tso Chien']
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment