Adaptive multi-pulse program scheme is proposed and evaluated in 21nm 3-bit/cell NAND flash devices. This scheme will be a promising solution to overcome performance degradation of program time accompanied with process technology scaling.
['Yong Sung Cho', 'Il Han Park', 'Sang Young Yoon', 'Nam Hee Lee', 'Sang Hyun Joo', 'Ki-Whan Song', 'Kihwan Choi', 'Jin Man Han', 'Kye Hyun Kyung', 'Young-Hyun Jun']
Adaptive multi-pulse program scheme based on tunneling speed classification for next generation multi-bit/cell NAND FLASH