Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: , a new write assist technique is proposed to improve the write characteristics of 1T-1MTJ STT-RAM bitcell through a symmetric write operation. This is done by applying a negative voltage to the bitline during write ‘1’ operation. The proposed technique is compared with the best previously proposed techniques. The simulation results using 65nm CMOS technology show that the proposed write assist technique results in 19% improvement in write energy compared to the boosted wordline technique. In addition, the proposed write assist technique leads to 12% and 48% reduction in the access transistor width compared with boosted wordline and balanced write techniques, respectively. Furthermore, the maximum voltage across the MTJ is reduced by 20% and 6% compared with boosted wordline and balanced write techniques, respectively.
['Hooman Farkhani', 'Ali Peiravi', 'Jens Kargaard Madsen', 'Farshad Moradi']
I am writing a research paper on a idea Symmetric write operation for 1T-1MTJ STT-RAM cells using negative bitline technique
[{"from": "human", "value": "I am writing a research paper on a idea Symmetric write operation for 1T-1MTJ STT-RAM cells using negative bitline technique"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: , a new write assist technique is proposed to improve the write characteristics of 1T-1MTJ STT-RAM bitcell through a symmetric write operation. This is done by applying a negative voltage to the bitline during write \u20181\u2019 operation. The proposed technique is compared with the best previously proposed techniques. The simulation results using 65nm CMOS technology show that the proposed write assist technique results in 19% improvement in write energy compared to the boosted wordline technique. In addition, the proposed write assist technique leads to 12% and 48% reduction in the access transistor width compared with boosted wordline and balanced write techniques, respectively. Furthermore, the maximum voltage across the MTJ is reduced by 20% and 6% compared with boosted wordline and balanced write techniques, respectively."}]