Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: The temperature dependence in the typical temperature operating range from 300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled.#R##N##R##N#It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS = 10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
['M. Estrada', 'M. Rivas', 'I. Garduño', 'F. Avila-Herrera', 'A. Cerdeira', 'Marcelo Antonio Pavanello', 'I. Mejia', 'M. A. Quevedo-Lopez']
I am writing a research paper on a idea Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
[{"from": "human", "value": "I am writing a research paper on a idea Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: The temperature dependence in the typical temperature operating range from 300\u00a0K up to 370\u00a0K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200\u00a0\u00b0C is presented and modeled.#R##N##R##N#It is seen that up to T\u00a0=\u00a0330\u00a0K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35\u00a0eV for VGS\u00a0=\u00a010\u00a0V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction."}]