Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Transfer-free graphene on SiO2 has been produced by catalytic chemical vapor deposition (CCVD) using an additional PMMA carbon source. During our CCVD process the graphene grows laterally, extending beyond prestructured metal catalyst perimeters, covering part of the SiO2 surface. The such grown graphene has been investigated by atomic force microscopy (AFM) showing a smooth surface with a roughness of Rums ∼ 0.346 nm. Hover, by means of conductive AFM microscopic defects as ll as graphene layer edges can be found in the graphene film. An electrical characterization of a field effect device shows a typical few-layer graphene subthreshold characteristic.
['Dennis Noll', 'Udo Schwalke']
I am writing a research paper on a idea Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy
[{"from": "human", "value": "I am writing a research paper on a idea Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Transfer-free graphene on SiO2 has been produced by catalytic chemical vapor deposition (CCVD) using an additional PMMA carbon source. During our CCVD process the graphene grows laterally, extending beyond prestructured metal catalyst perimeters, covering part of the SiO2 surface. The such grown graphene has been investigated by atomic force microscopy (AFM) showing a smooth surface with a roughness of Rums \u223c 0.346 nm. Hover, by means of conductive AFM microscopic defects as ll as graphene layer edges can be found in the graphene film. An electrical characterization of a field effect device shows a typical few-layer graphene subthreshold characteristic."}]