Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, hover, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based circuit characteristics can be significantly different from that in bulk CMOS devices.  identifies a new source of random process variation due to the gate work-function variation and resulting electrical confinement in emerging high-k/metal-gate FinFET devices. In order to capture the effect of the variations on the characteristics of multifin FinFETs (considering their width quantization property), this paper also presents a new statistical framework to accurately predict the effective threshold voltage of multifin FinFET devices. This framework is subsequently used to predict the leakage profile of FinFET-based SRAM cells. Since FinFETs are optimal for ultra-low-voltage operations due to near-ideal subthreshold swing (60 mV/dec),  focus on FinFET-based SRAM (including subthreshold SRAM) design. Contrary to the low sensitivity of the static noise margin (SNM) to the width of the pull-down devices in bulk-CMOS subthreshold SRAMs, our analysis shows, for the first time, the significant impact of employing multifin pull-down devices on the SNM of subthreshold FinFET SRAMs.
['Seid Hadi Rasouli', 'Kazuhiko Endo', 'Kaustav Banerjee']
I am writing a research paper on a idea Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization
[{"from": "human", "value": "I am writing a research paper on a idea Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, hover, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based circuit characteristics can be significantly different from that in bulk CMOS devices.  identifies a new source of random process variation due to the gate work-function variation and resulting electrical confinement in emerging high-k/metal-gate FinFET devices. In order to capture the effect of the variations on the characteristics of multifin FinFETs (considering their width quantization property), this paper also presents a new statistical framework to accurately predict the effective threshold voltage of multifin FinFET devices. This framework is subsequently used to predict the leakage profile of FinFET-based SRAM cells. Since FinFETs are optimal for ultra-low-voltage operations due to near-ideal subthreshold swing (60 mV/dec),  focus on FinFET-based SRAM (including subthreshold SRAM) design. Contrary to the low sensitivity of the static noise margin (SNM) to the width of the pull-down devices in bulk-CMOS subthreshold SRAMs, our analysis shows, for the first time, the significant impact of employing multifin pull-down devices on the SNM of subthreshold FinFET SRAMs."}]