Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: The operation of an active feedback circuit that minimizes voltage transients during pulsed-I-V measurements is presented. A field-effect transistor (FET) is used as the nominal device under test (DUT). The feedback circuit detects the sag in drain voltage that is caused by voltage drops produced across both the inductor in the drain bias tee and any series resistance in the drain-current path. The feedback signal consists of the current injected into the drain circuit that is sufficient to minimize the change in drain voltage. The feedback circuit actively synthesizes a small driving-point impedance that is seen by the drain of the DUT and is on the order of 10/sup -2/ /spl Omega/. Larger voltages do not need to be applied to the drain circuit in order to overcome the nominal inductive and resistive voltage drops. Therefore, a low-current por supply can be used to set V/sub ds/ for low- or high-por FETs. Transient responses with and without the use of the feedback circuit are presented. Pulsed-I-V measurements using this feedback method (made less than 1 /spl mu/s after the start of the gate pulse) of a high-por FET are also presented.
['Albert M. Young', 'Samuel S. Osofsky']
I am writing a research paper on a idea Active feedback circuit for minimization of voltage transients during pulsed measurements of semiconductor devices
[{"from": "human", "value": "I am writing a research paper on a idea Active feedback circuit for minimization of voltage transients during pulsed measurements of semiconductor devices"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: The operation of an active feedback circuit that minimizes voltage transients during pulsed-I-V measurements is presented. A field-effect transistor (FET) is used as the nominal device under test (DUT). The feedback circuit detects the sag in drain voltage that is caused by voltage drops produced across both the inductor in the drain bias tee and any series resistance in the drain-current path. The feedback signal consists of the current injected into the drain circuit that is sufficient to minimize the change in drain voltage. The feedback circuit actively synthesizes a small driving-point impedance that is seen by the drain of the DUT and is on the order of 10/sup -2/ /spl Omega/. Larger voltages do not need to be applied to the drain circuit in order to overcome the nominal inductive and resistive voltage drops. Therefore, a low-current por supply can be used to set V/sub ds/ for low- or high-por FETs. Transient responses with and without the use of the feedback circuit are presented. Pulsed-I-V measurements using this feedback method (made less than 1 /spl mu/s after the start of the gate pulse) of a high-por FET are also presented."}]