Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  presents a two-path inverter-based low-noise-amplifier (LNA) in TSMC 0.18?m CMOS technology for 10-12GHz frequency band applications. The primary path provides a flat and high enough gain within the interested frequency band. The secondary path ensures the input impedance matching for the proposed LNA. A peaking inductor is applied to the gate of inverters NMOS transistor. With this technique, the parasitic capacitance of MOS transistors will be appropriately compensated at high frequencies. Furthermore, resistive shunt feedback is applied to CMOS inverters in order to extend the amplifier bandwidth. The feedback resistor makes the LNA to be a self-biased structure. The proposed LNA consumes 10.3mW from a 1.8V supply. The amplifier gain is high enough and S21=12.8dB while the gain flatness is 0.55dB in the whole frequency band. The structure is optimized for minimum noise figure (NF) and the NF is 2.1-2.3dB within the bandwidth. The input impedance is matched and S11 is less than -10dB. The linearity of the LNA is sufficient and IIP3 is equal to -11dBm. A CMOS inverter based two-path LNA for 10-12 GHz frequency band is presented.The primary path provides required high frequency flat gain.The secondary path ensures the wideband input impedance matching.The bandwidth extension is achieved with resistive shunt feedback.
['Ahmad Yarahmadi', 'Abumoslem Jannesari']
I am writing a research paper on a idea Two-path inverter-based low noise amplifier for 10-12GHz applications
[{"from": "human", "value": "I am writing a research paper on a idea Two-path inverter-based low noise amplifier for 10-12GHz applications"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  presents a two-path inverter-based low-noise-amplifier (LNA) in TSMC 0.18?m CMOS technology for 10-12GHz frequency band applications. The primary path provides a flat and high enough gain within the interested frequency band. The secondary path ensures the input impedance matching for the proposed LNA. A peaking inductor is applied to the gate of inverters NMOS transistor. With this technique, the parasitic capacitance of MOS transistors will be appropriately compensated at high frequencies. Furthermore, resistive shunt feedback is applied to CMOS inverters in order to extend the amplifier bandwidth. The feedback resistor makes the LNA to be a self-biased structure. The proposed LNA consumes 10.3mW from a 1.8V supply. The amplifier gain is high enough and S21=12.8dB while the gain flatness is 0.55dB in the whole frequency band. The structure is optimized for minimum noise figure (NF) and the NF is 2.1-2.3dB within the bandwidth. The input impedance is matched and S11 is less than -10dB. The linearity of the LNA is sufficient and IIP3 is equal to -11dBm. A CMOS inverter based two-path LNA for 10-12 GHz frequency band is presented.The primary path provides required high frequency flat gain.The secondary path ensures the wideband input impedance matching.The bandwidth extension is achieved with resistive shunt feedback."}]