Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  address the issue of strain dependence of piezoelectric effect in semiconductor materials, which is manifested by the appearance of an electric field in response to crystal deformation. For III-V materials such as GaAs and InAs  find that strain considerably modifies the value of the piezoelectric coefficients. For the case of InAs pseudomorphically grown on GaAs substrate, our model predicts a sign reversal of the piezoelectric coefficients e"1"4, e"2"5 and e"3"6 from negative to positive for strains of around 7%. This might explain several discrepancies beten the theoretical and experimental observations made on nanostructures such as III-V quantum dots.
['R. Garg', 'V. Haxha', 'M. A. Migliorato', 'A. Hue', 'G. P. Srivastava', 'Thomas Hammerschmidt']
I am writing a research paper on a idea Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors
[{"from": "human", "value": "I am writing a research paper on a idea Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  address the issue of strain dependence of piezoelectric effect in semiconductor materials, which is manifested by the appearance of an electric field in response to crystal deformation. For III-V materials such as GaAs and InAs  find that strain considerably modifies the value of the piezoelectric coefficients. For the case of InAs pseudomorphically grown on GaAs substrate, our model predicts a sign reversal of the piezoelectric coefficients e\"1\"4, e\"2\"5 and e\"3\"6 from negative to positive for strains of around 7%. This might explain several discrepancies beten the theoretical and experimental observations made on nanostructures such as III-V quantum dots."}]