Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases, results in qualitatively unphysical predictions.  identify the causes of ill-posedness in these models.  then show how memristive devices in general can be modelled using only continuous/smooth primitives in such a way that they always respect physical bounds for filament length and also feature ll-defined and correct DC behaviour.  show how to express these models properly in languages like Verilog-A and ModSpec (MATLAB).  apply these methods to correct previously published RRAM and memristor models and make them ll posed. The result is a collection of memristor models that may be dubbed "simulation-ready", i.e., that feature the right physical characteristics and are suitable for robust and consistent simulation in DC, AC, transient, etc., analyses.  provide implementations of these models in both ModSpec/MATLAB and Verilog-A.
['Tianshi Wang', 'Jaijeet S. Roychowdhury']
I am writing a research paper on a idea Well-Posed Models of Memristive Devices
[{"from": "human", "value": "I am writing a research paper on a idea Well-Posed Models of Memristive Devices"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases, results in qualitatively unphysical predictions.  identify the causes of ill-posedness in these models.  then show how memristive devices in general can be modelled using only continuous/smooth primitives in such a way that they always respect physical bounds for filament length and also feature ll-defined and correct DC behaviour.  show how to express these models properly in languages like Verilog-A and ModSpec (MATLAB).  apply these methods to correct previously published RRAM and memristor models and make them ll posed. The result is a collection of memristor models that may be dubbed \"simulation-ready\", i.e., that feature the right physical characteristics and are suitable for robust and consistent simulation in DC, AC, transient, etc., analyses.  provide implementations of these models in both ModSpec/MATLAB and Verilog-A."}]