Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  reports about investigations concerning the degradation of the por metallization and wire bonds of smart por devices repeatedly stressed under cyclic thermal overload conditions. The fatigue of the interface beten por metallization and bond wire finally leads to device failure (Drain-Source short circuit or open). Evaluation of experimental data revealed that for life time prediction a modified Coffin-Manson Equation describing time to failure as a function ofthermal as ll as electrical stress parameters is applicable. Electrical and physical analysis of stressed devices is presented. Possible failure mechanisms of the DMOS silicon device are discussed.
['Thomas Detzel', 'Michael Glavanovics', 'Karin Weber']
I am writing a research paper on a idea Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions
[{"from": "human", "value": "I am writing a research paper on a idea Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  reports about investigations concerning the degradation of the por metallization and wire bonds of smart por devices repeatedly stressed under cyclic thermal overload conditions. The fatigue of the interface beten por metallization and bond wire finally leads to device failure (Drain-Source short circuit or open). Evaluation of experimental data revealed that for life time prediction a modified Coffin-Manson Equation describing time to failure as a function ofthermal as ll as electrical stress parameters is applicable. Electrical and physical analysis of stressed devices is presented. Possible failure mechanisms of the DMOS silicon device are discussed."}]