Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  focuses on characteristic analysis of a novel 10T SRAM cell. In the proposed cell two voltage sources VS1 and VS2 are used, one of which connected with the bit line and the other connected with the bitbar line, respectively, for reducing the voltage swing during the switching activity. This reduction in voltage swing causes less dynamic por dissipation during switching activity. Two stack transistors ST1 and ST2 are also connected in the pull-down paths. Due to the stack effect in the pull-down transistors in OFF condition sub-threshold leakage current is reduced and this causes reduction of static por dissipation. Simulation has been done in 45nm CMOS technology with 0.7 volt por supply with the help of Microwind 3.1 software. The simulation results of por dissipation, noise margin, por delay product and current leakage during read/write operation have been determined and compared to those of other existing SRAM cells.
['Prashant Upadhyay', 'Rajib Kar', 'Durbadal Mandal', 'Sakti Prasad Ghoshal']
I am writing a research paper on a idea Characteristic analysis of a novel low power 10T SRAM cell during read and write operations
[{"from": "human", "value": "I am writing a research paper on a idea Characteristic analysis of a novel low power 10T SRAM cell during read and write operations"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  focuses on characteristic analysis of a novel 10T SRAM cell. In the proposed cell two voltage sources VS1 and VS2 are used, one of which connected with the bit line and the other connected with the bitbar line, respectively, for reducing the voltage swing during the switching activity. This reduction in voltage swing causes less dynamic por dissipation during switching activity. Two stack transistors ST1 and ST2 are also connected in the pull-down paths. Due to the stack effect in the pull-down transistors in OFF condition sub-threshold leakage current is reduced and this causes reduction of static por dissipation. Simulation has been done in 45nm CMOS technology with 0.7 volt por supply with the help of Microwind 3.1 software. The simulation results of por dissipation, noise margin, por delay product and current leakage during read/write operation have been determined and compared to those of other existing SRAM cells."}]