Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the terminals with that of detailed physical simulations and measurements. The results agreed ll with that of two-dimensional device simulations and measurements. >
['Shiuh-Wuu Lee', 'Robert C. Rennick']
I am writing a research paper on a idea A compact IGFET model-ASIM
[{"from": "human", "value": "I am writing a research paper on a idea A compact IGFET model-ASIM"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the terminals with that of detailed physical simulations and measurements. The results agreed ll with that of two-dimensional device simulations and measurements. >"}]