Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Abstract , linearity characteristic of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) at different temperatures in the avalanche regime is investigated by the Volterra approach incorporating with a physics-based breakdown network for the first time. Third-order intermodulation distortion (IMD3) decreases with increasing temperature in the impact ionization region due to lor nonlinear contributions from individual nonlinearity according to the Volterra analysis results. Calculated gain, output por, and efficiency of SiGe HBTs are in good agreement with measurement results in the avalanche region. This analysis with respect to temperature can benefit the reliability study of linearity for SiGe HBTs in the avalanche regime.
['Chie-In Lee', 'Yan-Ting Lin', 'Wei-Cheng Lin']
I am writing a research paper on a idea Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series
[{"from": "human", "value": "I am writing a research paper on a idea Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Abstract , linearity characteristic of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) at different temperatures in the avalanche regime is investigated by the Volterra approach incorporating with a physics-based breakdown network for the first time. Third-order intermodulation distortion (IMD3) decreases with increasing temperature in the impact ionization region due to lor nonlinear contributions from individual nonlinearity according to the Volterra analysis results. Calculated gain, output por, and efficiency of SiGe HBTs are in good agreement with measurement results in the avalanche region. This analysis with respect to temperature can benefit the reliability study of linearity for SiGe HBTs in the avalanche regime."}]