Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Quasi-Planar Tri-gate (QPT) Bulk MOSFETs are fabricated simply by slightly recessing the shallow trench isolation (STI) oxide prior to gate-stack formation. In this cost-effective manner, 7% higher performance with lor leakage current in QPT bulk devices (vs. planar bulk devices) is achieved. QPT-based single-port SRAM characteristics can be improved by employing circuit design techniques (i.e., read- and write-assist circuitry) to compensate for unequal improvements in n-channel vs. p-channel QPT devices, to improve cell yield.
['Yasumasa Tsukamoto', 'Makoto Yabuuchi', 'Hidehiro Fujiwara', 'Koji Nii', 'Changhwan Shin', 'Tsu-Jae King Liu']
I am writing a research paper on a idea Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application
[{"from": "human", "value": "I am writing a research paper on a idea Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Quasi-Planar Tri-gate (QPT) Bulk MOSFETs are fabricated simply by slightly recessing the shallow trench isolation (STI) oxide prior to gate-stack formation. In this cost-effective manner, 7% higher performance with lor leakage current in QPT bulk devices (vs. planar bulk devices) is achieved. QPT-based single-port SRAM characteristics can be improved by employing circuit design techniques (i.e., read- and write-assist circuitry) to compensate for unequal improvements in n-channel vs. p-channel QPT devices, to improve cell yield."}]