Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Multi-level cell (MLC) NAND flash memories are very popular storage media because of their por efficiency and big storage density.  proposes to use nonlinear t-error-correcting codes to replace linear BCH codes for error detection and correction in MLC NAND flash memories. Compared to linear BCH codes with the same bit-error correcting capability t, the proposed codes have less errors miscorrected by all codewords and nearly no undetectable errors. For example, the proposed (8281, 8201, 11) 5-error-correcting code has no errors of multiplicity six miscorrected by all codewords while the widely used (8262, 8192, 11) linear shortened BCH code has 11 over 6 × A 11  errors in this class, where A 11  ≈ 10 14  is the number of codewords of Hamming ight eleven in the shortened BCH code. Moreover, in spite of the fact that the Hamming distance of the proposed code is 2t+1, it can also correct some errors of multiplicity t+1 and t+2 requiring no extra hardware overhead and latency penalty. , the constructions and the error correction algorithm for the nonlinear t-error-correcting codes are presented. The architecture of the encoder and the decoder for the codes are shown. The error correcting capabilities, the hardware overhead, the latency and the por consumption for the encoder and the decoder will be analyzed and compared to that of the linear BCH codes to demonstrate the advantages of the proposed codes for error detection and correction in MLC NAND flash memories.
['Zhen Wang', 'Mark G. Karpovsky', 'Ajay Joshi']
I am writing a research paper on a idea Reliable MLC NAND flash memories based on nonlinear t-error-correcting codes
[{"from": "human", "value": "I am writing a research paper on a idea Reliable MLC NAND flash memories based on nonlinear t-error-correcting codes"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Multi-level cell (MLC) NAND flash memories are very popular storage media because of their por efficiency and big storage density.  proposes to use nonlinear t-error-correcting codes to replace linear BCH codes for error detection and correction in MLC NAND flash memories. Compared to linear BCH codes with the same bit-error correcting capability t, the proposed codes have less errors miscorrected by all codewords and nearly no undetectable errors. For example, the proposed (8281, 8201, 11) 5-error-correcting code has no errors of multiplicity six miscorrected by all codewords while the widely used (8262, 8192, 11) linear shortened BCH code has 11 over 6 \u00d7 A 11  errors in this class, where A 11  \u2248 10 14  is the number of codewords of Hamming ight eleven in the shortened BCH code. Moreover, in spite of the fact that the Hamming distance of the proposed code is 2t+1, it can also correct some errors of multiplicity t+1 and t+2 requiring no extra hardware overhead and latency penalty. , the constructions and the error correction algorithm for the nonlinear t-error-correcting codes are presented. The architecture of the encoder and the decoder for the codes are shown. The error correcting capabilities, the hardware overhead, the latency and the por consumption for the encoder and the decoder will be analyzed and compared to that of the linear BCH codes to demonstrate the advantages of the proposed codes for error detection and correction in MLC NAND flash memories."}]