Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A output capacitor-free low-dropout regulator (LDO) with fast transient response and ultra-small compensation capacitor is proposed. The slew-rate enhancement (SRE) circuit based on dynamic biasing technique is designed to improve load transient response for 100 mA load step. The SRE circuit structure does not use any passive element to save silicon area and cost. The total active area of the proposed LDO is 0.043 mm 2  with 0.4 pF on-chip compensation capacitor and the stability analysis is also included. The proposed LDO is implemented in 0.35 µm process and experimental results show that it regulates the output voltage at 1.8 V and 1 V with dropout voltage of 200 mV, 100 mA maximum output-load current. The measured quiescent current is 15 μA only. For a 2 V input voltage, the proposed LDO is able to regulate output voltage of 1.8 V within 2 μs with less than 148 mV overshoot and undershoot. For a 1.2 V input voltage, the LDO is able to regulate output voltage of 1 V within 3 μs with less than 152 mV overshoot and undershoot.
['Shao-Ku Kao', 'Yu-Zhang Lee', 'Chun-Yu Ku', 'Hsiang-Chi Cheng']
I am writing a research paper on a idea Output capacitor-free low-dropout regulator with fast transient response and ultra small compensation capacitor
[{"from": "human", "value": "I am writing a research paper on a idea Output capacitor-free low-dropout regulator with fast transient response and ultra small compensation capacitor"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A output capacitor-free low-dropout regulator (LDO) with fast transient response and ultra-small compensation capacitor is proposed. The slew-rate enhancement (SRE) circuit based on dynamic biasing technique is designed to improve load transient response for 100\u00a0mA load step. The SRE circuit structure does not use any passive element to save silicon area and cost. The total active area of the proposed LDO is 0.043\u00a0mm 2  with 0.4\u00a0pF on-chip compensation capacitor and the stability analysis is also included. The proposed LDO is implemented in 0.35\u00a0\u00b5m process and experimental results show that it regulates the output voltage at 1.8\u00a0V and 1\u00a0V with dropout voltage of 200\u00a0mV, 100\u00a0mA maximum output-load current. The measured quiescent current is 15 \u03bcA only. For a 2\u00a0V input voltage, the proposed LDO is able to regulate output voltage of 1.8\u00a0V within 2\u00a0\u03bcs with less than 148\u00a0mV overshoot and undershoot. For a 1.2\u00a0V input voltage, the LDO is able to regulate output voltage of 1\u00a0V within 3\u00a0\u03bcs with less than 152\u00a0mV overshoot and undershoot."}]