Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Innovative architectural and circuit techniques are reducing the dynamic por in ternary content addressable memories (TCAMs). Also, shrinking device dimensions are making transistors increasingly leaky. Due to these two trends, the static por is becoming a significant portion of the total TCAM por.  presents two novel ternary storage cells that exploit the unique properties of TCAMs for reducing the cell leakage. Simulation results of the proposed cells show up to 40% leakage reduction over the conventional TCAM cell at the expense of a small degradation (<8%) in the static noise margin (SNM). The SNM degradation is negligible (<1%) for lor por supply voltages (<0.8 V). Measurement results of a test chip in 0.18-mum CMOS technology demonstrate that the proposed cells can perform read and write operations in less than 3.6 ns.
['Nitin Mohan', 'Manoj Sachdev']
I am writing a research paper on a idea Low-Leakage Storage Cells for Ternary Content Addressable Memories
[{"from": "human", "value": "I am writing a research paper on a idea Low-Leakage Storage Cells for Ternary Content Addressable Memories"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: Innovative architectural and circuit techniques are reducing the dynamic por in ternary content addressable memories (TCAMs). Also, shrinking device dimensions are making transistors increasingly leaky. Due to these two trends, the static por is becoming a significant portion of the total TCAM por.  presents two novel ternary storage cells that exploit the unique properties of TCAMs for reducing the cell leakage. Simulation results of the proposed cells show up to 40% leakage reduction over the conventional TCAM cell at the expense of a small degradation (<8%) in the static noise margin (SNM). The SNM degradation is negligible (<1%) for lor por supply voltages (<0.8 V). Measurement results of a test chip in 0.18-mum CMOS technology demonstrate that the proposed cells can perform read and write operations in less than 3.6 ns."}]