Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A 1.1 Mb embedded DRAM macro (eDRAM), for next-generation IBM SOI processors, employs 14 nm FinFET logic technology with   $\hbox{0.0174}~\mu\hbox{m}^{2}$    deep-trench capacitor cell. A Gated-feedback sense amplifier enables a high voltage gain of a por-gated inverter at mid-level input voltage, while supporting 66 cells per local bit-line. A dynamic-and-gate-thin-oxide word-line driver that tracks standard logic process variation improves the eDRAM array performance with reduced area. The 1.1   $~$  Mb macro composed of 8  $\times$  2 72 Kb subarrays is organized with a center interface block architecture, allowing 1 ns access latency and 1 ns bank interleaving operation using two banks, each having 2 ns random access cycle. 5 GHz operation has been demonstrated in a system prototype, which includes 6 instances of 1.1 Mb eDRAM macros, integrated with an array-built-in-self-test engine, phase-locked loop (PLL), and word-line high and word-line low voltage generators. The advantage of the 14 nm FinFET array over the 22 nm array was confirmed using direct tester control of the 1.1 Mb eDRAM macros integrated in 16 Mb inline monitor.
['Gregory J. Fredeman', 'Donald W. Plass', 'Abraham Mathews', 'Janakiraman Viraraghavan', 'Kenneth J. Reyer', 'Thomas J. Knips', 'Thomas Miller', 'Elizabeth L. Gerhard', 'Dinesh Kannambadi', 'Chris Paone', 'Dongho Lee', 'Daniel Rainey', 'Michael A. Sperling', 'Michael Whalen', 'Steven Burns', 'Rajesh R. Tummuru', 'Herbert L. Ho', 'Alberto Cestero', 'Norbert Arnold', 'Babar A. Khan', 'Toshiaki Kirihata', 'Subramanian S. Iyer']
I am writing a research paper on a idea A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access
[{"from": "human", "value": "I am writing a research paper on a idea A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: A 1.1 Mb embedded DRAM macro (eDRAM), for next-generation IBM SOI processors, employs 14 nm FinFET logic technology with   $\\hbox{0.0174}~\\mu\\hbox{m}^{2}$    deep-trench capacitor cell. A Gated-feedback sense amplifier enables a high voltage gain of a por-gated inverter at mid-level input voltage, while supporting 66 cells per local bit-line. A dynamic-and-gate-thin-oxide word-line driver that tracks standard logic process variation improves the eDRAM array performance with reduced area. The 1.1   $~$  Mb macro composed of 8  $\\times$  2 72 Kb subarrays is organized with a center interface block architecture, allowing 1 ns access latency and 1 ns bank interleaving operation using two banks, each having 2 ns random access cycle. 5 GHz operation has been demonstrated in a system prototype, which includes 6 instances of 1.1 Mb eDRAM macros, integrated with an array-built-in-self-test engine, phase-locked loop (PLL), and word-line high and word-line low voltage generators. The advantage of the 14 nm FinFET array over the 22 nm array was confirmed using direct tester control of the 1.1 Mb eDRAM macros integrated in 16 Mb inline monitor."}]