Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: , a 2D Monte Carlo method is developed to investigate electron transport in enhanced N-type silicon nanowire MOSFET. Approximate wave functions approach is chosen to solve quantum transport and determine electronic states in the silicon nanowire MOSFET. The electron mobility in nanowire MOSFET is ranging from 100 cm 2 V −1 s −1  to 1100 cm 2 V −1 s −1  under different transverse and perpendicular fields. The effect on electron mobility of each scattering mechanic is studied. It is observed that 3g and 3f intervalley scattering plays the most important role on electron mobility at low effective field and surface roughness scattering contributes dominant effect (about 70%) on the mobility at high effective field. Especially  find out that when surface roughness scattering is taken into consideration electron mobility will decrease by 20%∼60%. Furthermore, the effect on different oxide materials on nanowire electron mobility shows that electron mobility will increase dramatically with high dielectric constant material as the oxide layer in silicon nanowire MOSFET.
['Jie Chen', 'Tao Guo', 'Hang Guo']
I am writing a research paper on a idea Electron mobility in enhanced N-type silicon nanowire MOSFET
[{"from": "human", "value": "I am writing a research paper on a idea Electron mobility in enhanced N-type silicon nanowire MOSFET"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely: , a 2D Monte Carlo method is developed to investigate electron transport in enhanced N-type silicon nanowire MOSFET. Approximate wave functions approach is chosen to solve quantum transport and determine electronic states in the silicon nanowire MOSFET. The electron mobility in nanowire MOSFET is ranging from 100 cm 2 V \u22121 s \u22121  to 1100 cm 2 V \u22121 s \u22121  under different transverse and perpendicular fields. The effect on electron mobility of each scattering mechanic is studied. It is observed that 3g and 3f intervalley scattering plays the most important role on electron mobility at low effective field and surface roughness scattering contributes dominant effect (about 70%) on the mobility at high effective field. Especially  find out that when surface roughness scattering is taken into consideration electron mobility will decrease by 20%\u223c60%. Furthermore, the effect on different oxide materials on nanowire electron mobility shows that electron mobility will increase dramatically with high dielectric constant material as the oxide layer in silicon nanowire MOSFET."}]