Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  presents novel accurate propagation-delay expressions for evaluating the speed performances of very-high-speed bipolar gates. Our expressions re derived by sensitivity analysis though SPICE simulations.  previously developed high-speed emitter-coupled logic (ECL) and source-coupled logic (SCL) gates for high-speed operations using transient currents in emitter or source follors. In this work,  analyze the propagation-delay times of the conventional and proposed bipolar ECL gates using novel propagation-delay expressions. The base-emitter diffusion capacitance (CD) is a speed-limiting parameter in a bipolar gate. The ECL gate mainly consists of the current switch and emitter follors. Thus,  distinguished the base-emitter diffusion capacitances in current switch transistors and emitter follor ones to enhance the accuracy of the expressions by sensitivity analysis. Our expressions for both conventional and novel high-speed ECL gates re expressed as the linear ighted sum of 11 time constants. The propagation-delay times in conventional and novel high-speed gates calculated from our expressions agree ll with simulation results. The expressions show that our circuit technique can reduce the delay times for RBCD and τF in the current switch transistors, which are dominant speed limiting time constants in high-speed bipolar ECL gates.
['Yasushi Takahashi', 'Keisuke Eguchi', 'Akinobu Itoh', 'Kiyoshi Ishii']
I am writing a research paper on a idea Analysis of propagation-delays in high-speed bipolar gates
[{"from": "human", "value": "I am writing a research paper on a idea Analysis of propagation-delays in high-speed bipolar gates"}, {"from": "gpt", "value": "Thats a unique idea.You should consider the following idea to enhance your idea so that it would impact uniquely:  presents novel accurate propagation-delay expressions for evaluating the speed performances of very-high-speed bipolar gates. Our expressions re derived by sensitivity analysis though SPICE simulations.  previously developed high-speed emitter-coupled logic (ECL) and source-coupled logic (SCL) gates for high-speed operations using transient currents in emitter or source follors. In this work,  analyze the propagation-delay times of the conventional and proposed bipolar ECL gates using novel propagation-delay expressions. The base-emitter diffusion capacitance (CD) is a speed-limiting parameter in a bipolar gate. The ECL gate mainly consists of the current switch and emitter follors. Thus,  distinguished the base-emitter diffusion capacitances in current switch transistors and emitter follor ones to enhance the accuracy of the expressions by sensitivity analysis. Our expressions for both conventional and novel high-speed ECL gates re expressed as the linear ighted sum of 11 time constants. The propagation-delay times in conventional and novel high-speed gates calculated from our expressions agree ll with simulation results. The expressions show that our circuit technique can reduce the delay times for RBCD and \u03c4F in the current switch transistors, which are dominant speed limiting time constants in high-speed bipolar ECL gates."}]