enhancement of green electroluminescence from nanocrystalline silicon by wet and dry processes correlation between defects and luminescence property from electroluminescent el device composed of nanocrystalline silicon ncsi prepared by wet and dry processes such as hydrofluoric hf acid solution treatment and annealing have investigated using electron spin resonance and el measurements the el device using hftreated ncsi emitted strong red light because of existence of only pcecenters radiative recombination centers on the surface vicinity on the other hand the el device using annealed ncsi above 400 degrees c exhibited green luminescence by the reduction of particle size due to surface oxidation when the annealing temperature was risen from 400 degrees c up to 600 degrees c the green luminescence strengthened with increasing the pcecenters these results indicate that the formation of many radiative recombination centers onto the ncsi surface vicinity lead to the enhancement of green luminescence from the ncsi based el device