Antireflection coatings for photodetectors based on InSb
The paper presents the results of the design of antireflection coatings on the surface of indium antimonies and their practical implementation using film-forming materials ZnS, YF3, Si and SiO2 deposited by magnetron sputtering, electron beam and resistive evaporation. Refractive indices of the films used are determined. The spectral reflection characteristics of the obtained single-layer, two-layer, three-layer and more antireflection coatings in the mid-wave IR range were measured. The possibilities of minimizing the reflection from the surface of indium antimonites in the mid-wave IR spectrum are analyzed.