Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage
It has been shown that a series expansion in the inverse bias voltage of the amplitude and standard deviation of a signal of a hemispherical semiconductor detector makes it possible to determine the Fano factor, the product of the lifetime and mobility of electrons, the degree of inhomogeneity of the density of traps of a semiconducting material, and the relative standard deviation of the gain of an electron amplifier. An important advantage of the proposed method is its independence of the gain and noise of the electron channel.