ANALYSIS OF SINGLE CRYSTAL SILICON CARBIDE BY INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY
The present work is devoted to the study of the distribution of impurity elements over the volume of a SiC single crystal grown by the PVT method from a polycrystalline powder-like batch of known composition. An inductively coupled plasma mass spectrometry (MS-ICP) method was used to analyze the impurity purity of the samples.