Features of galvanostatic anodic oxidation of Si <sub>3</sub>N <sub>4</sub>-Si nanostructures in nitrate electrolyte based on ethylene glycol.
Mechanisms of SiO 2 anode films formation under galvanostatic anodic treatment of Si 3N 4-Si nanostructures are offered which take into account the presence of limiting stage of the process due to intermediate product (SiO) formation and its following interaction with nitrite-, nitrate-, and hydroxide-anions.