Silicon Film Deposition using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation
This paper presents results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasma-chemical method. A numerical model of a flow of gas mixtures, flowing out of an annular nozzle unit and flowing into a reactor, is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and describes the experimental data obtained satisfactorily