THE photoPIEZOELECTRIC RESONATOR ON GALLIUM ARSENIDE WITH SCHOTTKY''S BARRIERS
The physical model of the semiconductor photopiezoelectric resonator based on the accounting of a valve photo-EMF plate near superficial electrodes of high-resistance arsenide of gallium is presented. The model allows to explain frequency properties of the resonator and high values piezo-EMF on its output electrodes