Special aspects of modeling the frequency dependences of admittance of an MIS-structure based on an organic film with an Al<sub>2</sub>O<sub>3 </sub>dielectric layer
Equivalent circuits of an MIS-structure based on a thin organic film (Russian grade R3NT) with an Al2O3 dielectric are proposed for the depletion and enhancement modes. The frequency dependences of capacitance and conductance of the organic MIS-structure are simulated at the temperature 300 K within the frequency range 20 Hz - 2 MHz. It is shown that the measured values of capacitance and conductance essentially depend on the insulator layer thickness, organic film thickness and specific conductivity, surface trap parameters, frequency and bias voltage. The methods for determining the values of the basic equivalent circuit elements for correct characterization of the traps at the inorganic dielectric - organic film interface are described.