SB IR detectors with sensitivity in region, where quantums energy is less then the barrier height
The physical mechanism of operation, design and experimental investigation results of new tape IR detectors based on the hot electrons gas emission (Hot Electrons Gas Emission Detectors - HEGED) is considered. In such detectors the effect of change of a thermionic emission current in a semiconductor diode with a Schottky barrier (SB) is used by direct transfer of energy of the absorbed radiation to the system of electronic gas in quasimetallic layer of a barrier. The opportunity to detect the radiation with quantums energy less, than the height of Schottky diode potential barrier, and to obtain a substantial growth of a cutoff wavelength of the PtSi/Si detector were demonstrated.