Spectra of electroluminescence and the efficiency of light-emitting diodes on the basis of InGaN firm solution
Investigated were spectra of electroluminescence for structures on the basis of InGaN firm solution (λmax = 426 nm) in a range of 3.2-3.6 V. Determined was a dependence of efficiency of investigated structure on a current, on which the maximum is observed at 4 mА. The reasons of reduction of the efficiency and rate of growth of the ampere-brightness characteristic with increase in a current through a sample are explained.