X-RAY TOPO-TOMOGRAPHY USING LABORATORY SOURCES FOR STUDYING SINGLE DISLOCATIONS IN LOW ABSORBING SILICON SINGLE CRYSTAL
This paper is a continuation of a series of on the development of the X-ray topo-tomography method using laboratory equipment. The results of a study of the spatial location of a single polygonal dislocation half-loop in a silicon single crystal were obtained for testing the sensitivity of the X-ray TOPO-TOMO diffractometer. A comparison was made with high-resolution experimental data obtained at the European synchrotron radiation facility (ESRF). The experimental procedure and software and hardware for the 3D reconstruction of the investigated single defect - a polygonal dislocation half-loop - are described.