ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILMS (Cd1-x -y Znx Mny )3 As2(<i>x </i>+ <i>y </i>= 0<i>.</i>4; <i>y </i>= 0<i>.</i>04) PREPARED BY MAGNETRON SPUTTERING
The work investigates high-quality thin films (Cd1-x -y Znx Mny )3 As2 ( x + y = 0 . 4; y = 0 . 04), obtained by sputtering on an unheated silicon substrate ( T = 20◦ C). The temperature dependence of the electrical conductivity was measured in the range from 10 K to 320 K. In the region of helium temperatures, the range of realization of the mechanism of hopping conductivity with variable long hopping according to Shklovsky-Efros was determined. The localization radius of charge carriers and the width of the Coulomb and hard gaps are calculated in the density of localized states. The energy of the optical gap and the width of states of the tail of the valence band are determined.