FLIP CHIP INAS PHOTODIODES FOR OPERATION AT 20-100 °C and 2.7-3.7 mm
Fabrication of flip chip InAsSbP/lnAs heterostructure photodiodes witha 3.7 mm (20 °C) long-wavelength photosensitivity cutoff has been resported. The photodiodes can operate at up to 100 °C, the room temperature sensitivity maximum being at X = 3.35 mm, with the zero shift resistance R0= 1.1 kOhm and the specific detectivity Dλ* = 7.3 1010cm Hz1/2/W.