THERMAL OXIDATION AND FABRICATION OF CONTACTS FOR 6H-SiC
This paper presents results of the standard equipment for silicon technology using for manufacturing of device structures on monocrystals of silicon carbide. Such technological operations as thermal oxidation SiC, preparation of ohmic and barrier contacts to 6H-SiC are considered. It is shown that chemical treatment of semiconductor wafers, thermal oxidation and a sputtering of metals can be carried out on the standard equipment of silicon technology without restrictions