ZnO-Based Transparent Conductive Layers Deposited by Magnetron Sputteringof a Composite Cermet Target ZnO:Ga–Zn: Part 1
Comparative deposition of ZnO:Ga films has been carried out by dc magnetron sputtering of a ceramic ZnO:Ga(3 mol %) target and a composite cermet target ZnO:Ga(3 mol %)–Zn(20 wt %) at a substrate temperature of 50 and 200°C. A study of the formation processes, structure, and functional characteristics of films deposited by sputtering targets of both types in an Ar atmosphere shows that an increase in the zinc content in the reagent flow upon heating the substrate to 200°C improves the structural perfection and conductivity of the films while maintaining a high optical transmittance.