ANALYTICAL DESCRIPTION OF THE TEMPERATURE DEPENDENT RADIOTECHNICAL CHARACTERISTIC OF CERAMICS BASED ON SILICON NITRIDE
The functional silicon nitride ceramic materials are used widely in manufactured articles applied into a radio equipment field and etc. In this work, the analytic description of the temperature dependence of dielectric permeability and dielectric loss tangent obtained experimentally are fulfilled for the silicon nitride ceramics within a phenomenological model. It is shown that the model dependences describe the experimental data adequately. The dielectric permeability dependence is described by a linear function. The temperature growth speed evaluation of dielectric permeability is obtained. The evaluation technique of temperature maximum of dielectric loss is proposed on the basis of the found analytical dependence. Also, there proposed the technique of interpolation and prediction of relative changing dielectric loss tangent on temperature with experimental parameters and applying the obtained analytic expression.