Si/Ge Multiple Quantum Well pin-Photodiode
In the study, various designs of a silicon pin of a photodiode with quantum wells, filaments and dots based on Si/Ge heterostructure are considered. Calculations of the dark current, photocurrent and speed of a pin photodiode for various designs with quantum structures are presented. The results obtained made it possible to analyze and formulate recommendations for choosing a Si pin photodiode design for such applications as telecommunications, optical location and optical vision systems at wavelength of 1.55 pm.