Measurement of the tensor components of the anisotropic conductivity of semiconductor wafers a modified method of Van der Pauw
In work on the basis of the decision of boundary problems of electrodynamics the original technique of measurement by a contact method of components of a tensor of specific conductivity of anisotropic semiconductor plates of the square form is offered. Ohmic current and measuring contacts are located on the perimeter of the sample according to the most commonly used in practice schemes Van der Pauw. The obtained expressions are presented as polynomial dependences on the anisotropy parameter of the sample under study. The experimental test on the semiconductor CdSb single crystals and CdAs2.