INFLUENCE OF A DISLOCATION FILTER BASED ON LT-GAAS ON THE PERFECTION OF GaAs/Si LAYERS
The influence of dislocation filters developed on the basis of low-temperature layers (LT) of GaAs and post-growth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of germinating dislocations and reduce the surface roughness. Post-hrowth annealing at a temperature of 650 ºC reduces the concentration of centers of nonradiative recombination in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.