GENERATION-RECOMBINATION PROCESSES IN DIRECT INTERMEDIATE BAND PHOTOVOLTAIC NANOHETEROSTRUCTURES
A model for the study of generation-recombination processes in the direct intermediate band photovoltaic nanostructures was proposed. The model allows to calculate the functional characteristics and the efficiency of solar radiation conversion. The nanostructures with embedded quantum dots InAs / GaAs were experimentally grown. It is shown that the model enough correctly describes the experimental effect of increasing the shortcircuit current due an additional absorption of infrared photons.