Synthesis of 249KP4AT MOS-Relay SPICE-Model with the Temperature Dependence of Parameters
The process of designing the board space equipment includes the stage of circuit simulation of the electronic part of the equipment. In this case there is a problem in the development of mathematical models of the electronic component base in special applications, which adequately describe the behavior of the prototypes in a wide temperature range. In the work the methodology of synthesizing the mathematical model of the domestic-produced solid state MOS-relay 249KP4AT for further SPICE modeling has been developed. To achieve this goal, several tasks, such as obtaining the experimental dependencies of parameters; the development of a generalized mathematical model of the MOS relay; the extraction of the measured experimental parameters and its conversion into the parameters of the SPICE model and testing the SPICE-model have been solved. For the study a batch of five of the same type solid-state MOS relays, produced by JSC «Proton» has been selected. It has been shown that the samples of solid-state MOS relays of the same batch of delivery are distinguished by the technological variation of the parameters. The measurement results ultimately are converted into a set of 16 parameters in each channel. In this case, the synthesis of similar solid-state MOS relays from the 249KP4 family consists in finding the numerical values of this set. The testing of the developed methodology has been carried out in the form of testing a SPICE model in the Cadence OrCad environment. During the test simulation it has been found that the relative error in the calculation of the characteristic points by the imitation method does not exceed 7% compared with the measurement in a physical experiment.