ELECTROLUMINESCENCE OF COMMERCIAL GАP GREEN LIGHT EMITTING DIODES
A structure of a low temperaturespectrum of GaP(N) green light emitting diodes at 77 and 300 K was foundto be due to the recombination of excitons bound to nitrogen atoms and NN pairs. All the lines in the spectrum were identified. It was stated that the half-width of the main luminescence line (NN 1, hn = 2.175 eV) was caused by natural broadening of initial and final recombination states. The increase in the current through the p–n-junction results in the growth of the N-line intensity relative to that of the NN 1-line. The intensity redistribution might be caused by the change in the capture cross-section of minority charge carriers on each center when the injection level increases.