Study of linear end light edge-emitting diodes based on InP/InGaAsP/InP heterostructure with the sickle active region
The end buried light edge-emitting diodes (LED) with wide emission spectrum in the wavelength range of 1380 - 1420 nm were made. The construction of the linear end LED with the channel in a substrate and with an active region and a crescent- blocking layers of InP/GaInAsP/p-n-p-n/ZnSe was shown. There was held the LED dock with an optical single-mode iber and a microlens on the end of an optical iber. The characteristics of the LEDs based on the mesa stripe heterostructures InP/ GaInAsP were investigated. The dependence of the output power and LED emission spectrum on the basis of the mesa-stripe heterostructure InP-InGaAsP-InP active region with crescent and p-n-p-n/ZnSe structure, blocking the leakage current, the temperature stabilization of the active element and the injection current were studied. The dependence of the output parameters from the emitter temperature stabilization, which enables the creation on the basis of LED devices as the data with positive or without forced cooling was demonstrated. The possibility of creating of buried LEDs with crescent active region and a low degree of modulation of the radiation spectrum was shown. The possibility of entry to 45% of the radiation of LEDs in a single mode optical iber with a microlens produced by chemical etching and the spliced iber end in a high arc welding machine was demonstrated.