Current-voltage characteristics of Schottky diodes at high current densities under minority carriers injection
An analytical expression for a Schottky diode currentvoltage characteristic at high injection level of minority carriers has been obtained. It is shown that even at very high current densities, the higher the base doping level, the larger voltage drop across the diode. The physical mechanism responsible for this „paradoxical“ result is analyzed. Analytical results are confirmed by simulation performed with software that takes into account the entire set of nonlinear effects, caused by high injection level and high doping level of the emitter region.