THE EFFECT OF FRENKEL PAIRS COMPONENTS SEPARATION DURING ION IMPLANTATION INTO SiO2-Si STRUCTURE
The features of radiation defects distribution after ion implantation of the SiO2-Si structure with a projected ion range equal to the depth of the interface are investigated. The effect of a stable radiation defects separation at the SiO2-Si interface which leads to the interstitial supersaturation of Si is observed using X-ray diffractometry.