Influence of Dislocations on the Internal Quantum Efficiency of Light-Emitting Structures Based on Quantum Wells InGaN/GaN
The different methods to determine the internal quantum efficiency of light-emitting structures based on quantum wells InGaN/GaN were analyzed. Recombination properties of structures based on quantum wells InGaN/GaN and the influence of dislocations on the internal quantum efficiency of light-emitting structures based on quantum wells InGaN/GaN were examined.