Kinetics and Amplitude of Photo Response of Silicon of Photo-Electronic Multipliers
The influence of such important factors as supply voltage and temperature on the photo response characteristics of silicon photo-electronic multipliers has been insufficiently studied. In the work, the influence of theses factors on the temporal characteristics of the photo response of the silicon photo-electronic multipliers has been investigated. A block diagram of experimental setup has been presented, in which the source of optic radiation is light diode and the registration of the photo responses has been provided by specialized hardware-software complex, has been provided. The results of the study on the influence of supply voltage and temperature on kinetics and amplitude of the photo response of silicon photo-electronic multipliers, performed on n +- n - p +- and p +- p - n +-structures with pulsed excitation by light at a wavelength of 630 nm, have been presented. It has been stated that when exposed with optical pulses of the same duration, wavelength and energy exposure on the silicon photo-electronic multipliers at the same temperature and with the same overvoltage, the duration of the photo response is longer for silicon photo-electronic multipliers with p+ - p - n+ -structure. Duration of the rising edge has been associated with the gain ratio of photoinduced current and duration of the relaxation zone of the photo signal pulse has been associated with a value of the series resistance for silicon photo-electronic multipliers. The duration of the rise front is longer for silicon photo-electronic multipliers with a higher photo current gain factor. The silicon photo-electronic multipliers with a higher value of series resistance have a longer decline.