AGING EFFECT ON THE REDISTRIBUTION OF DOPED INCURUTY IN SI–SIO2 STRUCTURE
The effect of aging on the redistribution of the dopant of antimony and phosphorus in the silicon and the composition of the interfacial layer and the oxide film in the Si-SiO2 structure.In this paper for the research we used monocrystals of silicon during the growth doped with phosphorus and antimony, which are widely used in the creation of discrete devices and integrated circuits, and which were lain in a container for more than twenty years. To determine the effect of aging on the elemental composition of the surface layer we conducted a research with the method of X-ray photoelectron spectroscopy. It is shown that the alloying element in the oxide layer is accumulated in a large amount. The surface potential was measured by the method of field effect. The subsurface volume charge, the surface conductivity and surface tension of the field were calculated with the use of the measured values of the surface potential.