Sensitivity of solid-state image sensor in short wave infrared range in case of high temperature
Dependences of quantum efficiency of solid-state image sensors on the basis of a CCD and CMOS of technologies are received from wavelength in short wave infrared spectral region in the range of temperatures from +50°C to +130°C. It is shown that on wavelength of 940 nanometers increase in quantum efficiency makes 1,1-1,3 times, and on wavelength of 1064 nanometers - from 2 to 5 times, at the same time noise of the dark current increase slightly. Theoretical results are confirmed experimentally on specially developed bench