SPECTRUM OF RAMAN SCATTERING HETEROSTRUCTURES A<sub>3</sub>B<sub>5</sub>/Si (100) OBTAINED BY PULSED LASER DEPOSITION
He article discusses the problem of determining the Raman spectra of the lighttion in the hetrostructure AlGa, As, P / Si AlGa, As / Si. x 1-x 1-y y x 1-x The aim is to study the Raman spectra of hetero-structures of compounds AlGa- As- P / Si AlGa- As / Si, obtained by pulsed laser deposition (PLD). For heterostructures grown on silicon substrates with the (100), shifts the opticalphonon frequencies obtained at T = 300 °C is minimal and is 10 cm-1. From this it can be concluded that the synthesis temperature decrease heterostructure type AlGa As1 P / Si up to T = 300 °C produces samples with low value of stress level. It is shown that Meto-house pulsed laser deposition on Alg3Gag7As /Si example, can be produced hetero-structures Aß5 / Si of sufficient quality.