COMPOSITION OF ZIRCONIUM COATING PRECIPITATED ON SILICON IN THE CONDITIONS OF IONIC ASSISTING
In the present study we investigated the composition and distribution of elements in the coating deposited on the plate (100) Si in conditions of ion assisting at room temperature, as well as chemical bonds of elements in the surface layer of silicon crystals at deposition of the Zr-coating. We studied the elemental composition of the coating and distribution of elements in depth, using Rutherford backscattering of helium ions and secondary ion mass spectrometry. It is found that the coating is uniform in composition throughout its thickness. The composition of coatings on silicon atoms includes the deposited metal Zr, technological impurities C, O, Al, and Si as a result of counter-diffusion from the substrate into the coating. An increace of the accelerating voltage for assisting Zr+ ions from 5 to 10 kV results in a decrease in the thickness of the coating at the same time modifying the silicon samples. The calculated average deposition rate of the coating was 0.3-0.5 nm/min. The surface layer of the coating contain carbide ZrC, SiC, oxides ZrO, SiO, CH hydrocarbons, C2 molecules, as well as Zr, Si, C, O, Al atoms.