MICROSTRENGTH PROPERTIES OF SILICON SINGLE CRYSTAL RECEIVED FROM THE MELT UNDER THE INFLUENCE OF COMBINED MAGNETIC FIELDS
Silicon single crystals received by Czochralski method from the melt under the influence of combined dynamic and steady magnetic fields were investigated by microindtntion method. It is experimentally shown, that microstrengten characteristics of silicon single crystal (microhardness Н, microfragility Z, factor of viscosity of destruction К 1С and effective energy of destruction γ) depend on conditions of receipt (parameters of magnetic fields). Essential distinctions of microstrengten properties of the samples which have been cut out from the bottom and top parts of the same ingot are found out. The specified features of microstrengten properties are caused by distinctions in defect-impurity structure of investigated wafers