Electrophysical properties of ZnSe crystals doped with transition elements
The electrical conductivity and photoconductivity of ZnSe single crystals doped with transition element ions are investigated. It is shown that doping zinc selenide crystals with impurities of 3d-elements does not lead to formation of electrically active levels of these impurities. However, the introduction of impurities in the cationic sublattice result in formation of own electrically active defects. It is found that ZnSe : Ti,V,Cr,Fe,Co,Ni crystals possess high-temperature impurity photoconductivity. The photoconductivity mechanisms in these crystals are proposed. By the position of first ionization photoconductivity band the energies of 3d2+ ions ground states in zinc selenide crystals are determined.