ЕLECTROTRANSPORT PROPERTIES WIDE-BANDGAP OXIDES AND MULTILAYER STRUCTURES
The films ZnO, In 2O 3 and a multilayer structure (In 2O 3/ZnO) 83 are prepared. The structure and electrical properties of the films are investigations. X-rays studies have shown that the films of ZnO and In 2O 3 have fine-grained structure. Low-temperature resistance measurements revealed the presence of weak localization of conduction electrons for films In 2O 3 and (In 2O 3/ZnO) 83. It is found that with increasing annealing temperature in In 2O 3 films the length of inelastic scattering of electrons increases, and in films (In 2O 3/ZnO) 83 it is decreases