Morphology and Structural Properties of AlGaInSbAs Epitaxial Films Grownon InAs Substrates
There is discussed effect of growth conditions on a surface morphology and structural properties of AlGaInSbAs solid solution obtained on indium arsenide substrates. There are determinated optimal parameters of growth process (T G ≤ 60 K/cm, l > 80 мкм) of isoperiodic AlGaInSbAs films on InAs substrates with a high structural perfection BH/2 xGayIn1 –x–ySbzAs1 –z solid solution and reaches the value of Δa = 1.8 × 10–2 Å. With changing antimony concentration, the lattice mismatch reaches Δa = 7.2 × 10–3 Å at z = 0.5 mol. frac.