EFFECT OF SATURATION OF ENERGY LEVELS IN A QUANTUM WELL ON THE RADIATION SPECTRUM AND THE QUANTUM EF-FICIENCY OF GaN/InGaN LEDs
The effect of saturation of the energy levels in the quantum well of blue GaN/InGaN LEDs on the transformation of the radiation spectrum and the decrease of the external quantum efficiency with increasing injection current is presented and investigated. We investigated the emission spectra of light-emitting diodes and the dependence of the external quantum efficiency of different spectral bands of the total radiation spectrum on the injection current in the current range 10-4-5·10-2 A at a temperature of 300 K. It was shown that the growth of the surface concentration of charge carriers in the quantum well to the critical well is accompanied by shift of the maximum of the spectrum into the short-wavelength region by ΔE ≈ 65meV, a decrease in the radiation intensity by 15-19%