Hall’s effect in the Si/SiO <sub>2</sub> structure with Ni nanoclusters in the oxide pores
The results of investigation of Hall’s effect in the Si/SiO 2 structure with Ni nanoclusters in the oxide layer pores are presented. It has been shown that the negative sign of the effect is determined by charge transfer mechanisms and characteristic features of the band structure. Positive values of Hall voltage in the low temperature region are concerned with the anomalous contribution to the effect of a ferromagnetic metal due to the additional scattering of charge carriers with a different degree of spin polarization.