Internal getter in the process of CCD manufacture annealings
The micro-defects formation in bulk of silicon wafers proceeds during CCD manufacturing annealings. The previously created denuded zone remains defectless. The effective internal getter has formed after the first long annealing in wafers, which previously was pasted complete cycle of internal getter formation, already at the oxygen content more than 6.5·1017 cm-3, and in wafers, was pasted only 1150 °C anneal, - more than 7.4·1017 cm-3. This allows or to expand range of initial oxygen concentrations, or to do only anneal at 1150 °С.