SULFUR POLYTROPISM IN GALLIUM PHOSPHIDE
Cz-grown GaP(S) signle crystals have been studied. We show that the sulfur content in GaP(S) in the form of a shallow donor at a concentration of 19 cm-3 is 0.12 of the total sulfur content in the crystal. Also, we found that the sulfur polytropism in these crystals is accounted for by sulfur dissolution in the form of Ga2S3 molecules forming a Ga3-xP1-xS3x pseudobinary solid solution. This is nature of sulfur polytropism. The study also showed that microdefect formation is caused by the precipitation of an intrinsic component, i.e gallium.