On silicon p+ -n junctions injection ability limit caused by fundamental physical effects
Analytical expressions for p+-n-junction leakage current dependences on doping level of p+ region have been derived taking into account all aggregate of non-linear physical effects: electron-hole scattering, Auger recombination, narrowing of the forbidden gap, non-linear dependences of carrier lifetime and mobility on doping level. It is shown that there a minimum on this dependence, at which the injection ability of the p+-emitter is maximum. The dependence of the extreme position on the base parameters of heavily doped p+-layer is analyzed. The data obtained make it possible to optimize a structure of power silicon devices and to facilitate the adequacy of numerical calculations.