Spectral absorption characteristics in epitaxial structures based on InAs at temperatures of 80 K and 300 K
The structure of autoepitaxial n-InAs layer grown by chloride-hydride gas epitaxy on n ++-InAs substrates were investigated. Optical absorption spectra for n ++-InAs at 83 K and 300 K were experimentally determined. A comparison of the spectral dependences of the absorption in the back-illuminated epitaxial layer has been made at various wafer doping levels n = (0.6-3.3)·10 18 cm -3.