A STUDY OF 4<sup>IV</sup>S<sup>VI</sup> CRYSTALS AND FILM STRUCTURES BY A POLAR FIGURES METHOD
Opportunities of the method of polar figures (PF) are shown by studying the structure of 4IVBVI crystals, films and multilayered systems. In Pb^MnTe(Ga) crystals two phases having close lattice parameter are observed, and their quantitative characteristics are determined. In PbTe(Ga)/BaF2(111) films the block turning pattern in the film plane is described. For Pb1_xEuxSe/CaF2/Si(111) film structure and PbSe/Pb^EuSe/BaF2/ Pb1_xEuxSe/CaF2/Si(111) multilayered heterostructure, mutual orientation of crystal lattices of interfaced layers is determined. By means of PF building the behavior of crystal lattices of layers of film structures, into which composition the materials possessing B-type epitaxy (BaF2, CaF2) enter, is shown.