NONEQUILIBRIUM PROCESSES AT DOPED THE SILICON SUBSTRATE OF MIS-STRUCTURES BY ZIRCONIUM
Influence of atoms Zr on nonequilibrium processes in silicon MIS-structures is investigated. It is established, that presence Zr in MIS-structures leads to shift VFC, increase Nss and occurrence on spectra of distribution Nss (Eg) three obviously expressed peaks in area energies with values of the EC - 0.22эВ, the EC - 0.27 эВ and Еv + 0.30 эВ. PACS: 81.05.-t, 71.55.-i.