Study of the cleaved edge cross section of the multilayer heterostructures by photoluminescence spectroscopy
It is shown that complex application of confocal micro-Raman spectroscopy and photoluminescence spectroscopy by line scanning the cleaved edge of the heterostructures enables monitoring the stress profile, determination of epitaxial layer thickness and solid solution composition. In this way properties of laser structure with InGaAs/GaAsP quantum wells were studied. It is shown that it’s possible to register photoluminescence radiation from various layers of structure separately. Determination of InxGa1-IP solid solution composition by frequency position of TO InP-like mode and by photoluminescence energy gives close results.