The scattering of charge carriers in the impurity ions in the heterostructure InAs/AlSb
The article investigates the mechanism by ionized atoms carrier scattering at impurities heterostructure InAs/AlSb with two occupied subbands. The aim of the article is to develop and complement the existing theory, which fully describes the quantum-mechanical processes in the structure of the study. Conducted transport time calculation showed that the proposed theory accurately describes the two-dimensional carrier scattering mechanism is donor impurity ions in the active layer of InAs. It was found that the lifetime of limiting the mobility of two-dimensional carrier, in scattering by impurity ions 10-12 s.