A new style of wafers composed of gallium-nitride-on-silicon (GaN-on-Si) is being used to produce white LEDs using 200-mm silicon wafers. This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes. The sapphire apparatus must be coupled with a mirror-like collector to reflect light that would otherwise be wasted. It is predicted that by 2020, 40% of all GaN LEDs will be made with GaN-on-Si. Manufacturing large sapphire material is difficult, while large silicon material is cheaper and more abundant. LED companies shifting from using sapphire to silicon should be a minimal investment.
১. কোন বছরের মধ্যে গ্যালিয়াম-নাইট্রাইড-অন-সিলিকন ওয়েফার দিয়ে সকল গ্যান এলইডি তৈরি করা হবে?
2020