In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]
హై-బ్రైట్నెస్ బ్లూ ఎల్ఈడీలను ఉత్పత్తి చేసే పద్ధతిని మొదట ఎవరు కనుగొన్నారు?
Dr. Moustakas