hat
ON la nan 1200 volt (V), 80 milliohm (mΩ), SiC MOSFETs fè yon koule ki ba aktyèl, yon dyòd dyod entrizik ki ba chaj rekiperasyon ranvèse, ki bay apik rediksyon pouvwa pèt ak sipò pi wo operasyon frekans ak pi gwo dansite pouvwa, ak ba EON ak vire / vit vire SOU ak OFF konbine avèk ba avanse vòltaj diminye pèt pouvwa total ak Se poutèt sa refwadi kondisyon.
eng
ON’s 1200 volt (V), 80 milliohm (mΩ), SiC MOSFETs hace a low leakage current, a fast intrinsic diode with low reverse recovery charge, which gives steep power loss reduction and supports higher frequency operation and greater power density, and low Eon and Eoff / fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements.