hat
Demonstrasyon nan APEC gen ladan yon carbure Silisyòm (SiC) 11kW 100kHz twa faz konplè pon PFC (faktè pouvwa korektè) manifestan bati toutotou sou a NVHL080N120SC1 SiC mosfet (1,200V,> 30A, ~ 80mΩ, TO247) ak chofè pòtay NCP51705 - ki gen ladan yon chaj-ponp yo kreye yon patipri negatif yo enkli SiC mosfet vire-off.
eng
Demonstrations at APEC include a silicon carbide (SiC) 11kW 100kHz three-phase full bridge PFC (power factor corrector) demonstrator built around On’s NVHL080N120SC1 SiC mosfet (1,200V, >30A, ~80mΩ, TO247) and NCP51705 gate driver – which includes a charge-pump to create a negative bias to include SiC mosfet turn-off.