27045
We demonstrate logic and static random access memory ( SRAM ) circuits using a 100 mu m long and 100 nm thin single ZnO nanowire ( NW ) , which acts as a channel of field - effect transistors ( FETs ) with Al2O3 dielectrics .
 ZnO, Al2O3
Please list all entity words in the text that fit the category. Output format is "word1, word2". 
Option: Chemical 
Text: {0} 
Answer:
 ZnO, Al2O3