Later in the process , polysilicon gates are deposited by chemical vapor deposition , patterned with photolithography .
Later in the process , polysilicon gates are etched in such a way that the separately phased gates lie perpendicular to the channels .
Later in the process , polysilicon gates are deposited by chemical vapor deposition , patterned with photolithography , and etched in such a way that the separately phased gates lie perpendicular to the channels .