For instance , in silicon , the interstitial may either have a split ( 110 ) structure or a tetrahedral truly interstitial one .
In semiconductors the situation is more complex , since defects may be charged and different charge states may have different structures .
In silicon , the interstitial may either have a split ( 110 ) structure or a tetrahedral truly interstitial one .
In semiconductors the situation is more complex , since defects may be charged and different charge states may have different structures .