# IEEE Transactions on Nuclear Science

## Volume 55 Issue 4  Part 1 • Aug. 2008

This issue contains several parts.Go to:  Part 2

## Filter Results

Displaying Results 1 - 25 of 67
• ### [Front cover]

Publication Year: 2008, Page(s): C1
| PDF (54 KB)
• ### IEEE Transactions on Nuclear Science publication information

Publication Year: 2008, Page(s): C2
| PDF (37 KB)

Publication Year: 2008, Page(s):1801 - 1804
| PDF (85 KB)
• ### RADECS 2007 Conference Overview

Publication Year: 2008, Page(s):1805 - 1806
| PDF (29 KB) | HTML
• ### Comments by the Editors

Publication Year: 2008, Page(s): 1807
| PDF (21 KB) | HTML
• ### List of reviewers

Publication Year: 2008, Page(s):1808 - 1809
| PDF (22 KB)
• ### The Near-Earth Space Radiation Environment

Publication Year: 2008, Page(s):1810 - 1832
Cited by:  Papers (46)
| | PDF (4246 KB) | HTML

The effects of the space radiation environment on spacecraft systems and instruments are significant design considerations for space missions. Astronaut exposure is a serious concern for manned missions. In order to meet these challenges and have reliable, cost-effective designs, the radiation environment must be understood and accurately modeled. The nature of the environment varies greatly betwe... View full abstract»

• ### Radiation Effects in MOS Oxides

Publication Year: 2008, Page(s):1833 - 1853
Cited by:  Papers (215)  |  Patents (1)
| | PDF (1872 KB) | HTML

Electronic devices in space environments can contain numerous types of oxides and insulators. Ionizing radiation can induce significant charge buildup in these oxides and insulators leading to device degradation and failure. Electrons and protons in space can lead to radiation-induced total-dose effects. The two primary types of radiation-induced charge are oxide-trapped charge and interface-trap ... View full abstract»

• ### Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

Publication Year: 2008, Page(s):1854 - 1878
Cited by:  Papers (60)  |  Patents (2)
| | PDF (1778 KB) | HTML

This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits, with a special emphasis on the current challenges concerning the physical modeling of ultra-scaled devices (in the deca-nanometer range) and new device architectures (Silicon-on-insulator, multiple-gate, nanowire MOSFETs). After introducing the classificati... View full abstract»

• ### Modeling Single Event Transients in Bipolar Linear Circuits

Publication Year: 2008, Page(s):1879 - 1890
Cited by:  Papers (12)
| | PDF (1045 KB) | HTML

This review paper covers modeling of single event transients (SETs) in bipolar linear circuits. The modeling effort starts with a detailed circuit model, in a program such as SPICE, constructed from a photomicrograph of the die, which is verified by simulating the electrical response of the model. A description of various approaches to generating the single event strike in a circuit element is the... View full abstract»

• ### Multi-Scale Simulation of Radiation Effects in Electronic Devices

Publication Year: 2008, Page(s):1891 - 1902
Cited by:  Papers (7)  |  Patents (2)
| | PDF (1035 KB) | HTML

As integrated circuits become smaller and more complex, it has become increasingly difficult to simulate their responses to radiation. The distance and time scales of relevance extend over orders of magnitude, requiring a multi-scale, hierarchical simulation approach. This paper demonstrates the use of multi-scale simulations to examine two radiation-related problems: enhanced low-dose-rate sensit... View full abstract»

• ### Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

Publication Year: 2008, Page(s):1903 - 1925
Cited by:  Papers (54)
| | PDF (2304 KB) | HTML

Increased space system performance is enabled by access to high-performance, low-power radiation-hardened microelectronic components. While high performance can be achieved using commercial CMOS foundries, it is necessary to mitigate radiation effects. This paper describes approaches to fabricating radiation-hardened components at commercial CMOS foundries by the application of novel design techni... View full abstract»

• ### Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

Publication Year: 2008, Page(s):1926 - 1946
Cited by:  Papers (15)
| | PDF (1534 KB) | HTML

The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits for use in space and/or high-energy particle accelerator applications. These include test guidelines for total dose hardness assurance qualification and single event effects (SEE) qualification. In this work, issues associated with these ha... View full abstract»

• ### Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems

Publication Year: 2008, Page(s):1947 - 1952
Cited by:  Papers (5)  |  Patents (1)
| | PDF (974 KB) | HTML

A scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI systems. The SET and SEU soft errors mean the upset caused by latching an SET pulse that originates in combinational logic blocks and the upset caused by a direct ion hit to the FF, respectively. An irradiation test method using the scan FF is proposed to obtain SET... View full abstract»

• ### Total Dose Effects in Op-Amps With Compensated Input Stages

Publication Year: 2008, Page(s):1953 - 1959
Cited by:  Papers (3)
| | PDF (702 KB) | HTML

This paper discusses total dose damage in operational amplifiers with compensated input stages. The impact of this design approach on unit-to-unit variability of radiation damage is examined, along with hardness assurance methods that can be used to bound the radiation behavior. Data is included for an unusually large sample (100 devices) of one device type. Half of those devices were subjected to... View full abstract»

• ### Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs

Publication Year: 2008, Page(s):1960 - 1967
Cited by:  Papers (12)
| | PDF (635 KB) | HTML

We investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This work focuses on electrical stresses on n-channel MOSFETs performed after irradiation with X-ray up to 136 Mrad(SiO2) in different bias conditions. Irradiation is shown to negatively affect the degradation during subsequent hot carri... View full abstract»

• ### Effectiveness of TMR-Based Techniques to Mitigate Alpha-Induced SEU Accumulation in Commercial SRAM-Based FPGAs

Publication Year: 2008, Page(s):1968 - 1973
Cited by:  Papers (11)
| | PDF (444 KB) | HTML

We present an experimental analysis of alpha-induced soft errors in 90-nm low-end SRAM-based FPGAs. We first assess the relative sensitivity of the configuration memory bits controlling the different resources in the FPGA. We then study how SEU accumulation in the configuration memory impacts on the reliability of unhardened and hardened-by-design circuits. We analyze different hardening solutions... View full abstract»

• ### Study of Single-Event Transients in High-Speed Operational Amplifiers

Publication Year: 2008, Page(s):1974 - 1981
Cited by:  Papers (8)
| | PDF (483 KB) | HTML

This paper presents a simulation and experimental study of the analog single-event transient sensitivity of wide bandwidth operational amplifiers. Architecture effects are presented that could influence ASIC design and COTS selection. View full abstract»

• ### Evaluation of Recent Technologies of Nonvolatile RAM

Publication Year: 2008, Page(s):1982 - 1991
Cited by:  Papers (4)
| | PDF (1760 KB) | HTML

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices. View full abstract»

• ### Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions

Publication Year: 2008, Page(s):1992 - 2000
Cited by:  Papers (12)
| | PDF (416 KB) | HTML

The purpose of this paper is to study the mechanisms underlying performance degradation in 130 nm and 90 nm commercial CMOS technologies exposed to high doses of ionizing radiation. The investigation has been mainly focused on their noise properties in view of applications to the design of low-noise, low-power analog circuits to be operated in harsh environment. Experimental data support the hypot... View full abstract»

• ### Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $mu$m Inverter Chain

Publication Year: 2008, Page(s):2001 - 2006
Cited by:  Papers (12)
| | PDF (716 KB) | HTML

Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET. Thus, an investigation of the SET propagation through a 10-inverter logic chain is performed in the 218-418 K temperature range, and the threshold LET... View full abstract»

• ### Probing SET Sensitive Volumes in Linear Devices Using Focused Laser Beam at Different Wavelengths

Publication Year: 2008, Page(s):2007 - 2012
Cited by:  Papers (7)
| | PDF (806 KB) | HTML

The main objective of the work presented here is to explore the ability of laser irradiations to determine the SET sensitive depths of a linear device by using several wavelengths. Laser testing at two wavelengths allows the estimation of sensitive depths. The approach conducted here is applied for the first time to a linear device with very deep sensitive depth. The 1064 nm wavelength seems to be... View full abstract»

• ### Use of Code Error and Beat Frequency Test Method to Identify Single Event Upset Sensitive Circuits in a 1 GHz Analog to Digital Converter

Publication Year: 2008, Page(s):2013 - 2018
Cited by:  Papers (4)
| | PDF (423 KB) | HTML

Typical test methods for characterizing the single event upset performance of an analog to digital converter (ADC) have involved holding the input at static values. As a result, output error signatures are seen for only a few input voltage and output codes. A test method using an input beat frequency and output code error detection allows an ADC to be characterized with a dynamic input at a high f... View full abstract»

• ### A New Algorithm for the Analysis of the MCUs Sensitiveness of TMR Architectures in SRAM-Based FPGAs

Publication Year: 2008, Page(s):2019 - 2027
Cited by:  Papers (11)
| | PDF (694 KB) | HTML

In this paper we present an analytical analysis of the fault masking capabilities of triple modular redundancy (TMR) hardening techniques in the presence of multiple cell upsets (MCUs) in the configuration memory of SRAM-based field-programmable gate arrays (FPGAs). The analytical method we developed allows an accurate study of the MCUs provoking domain crossing errors that defeat TMR. From our an... View full abstract»

• ### New Analytical Solutions of the Diffusion Equation Available to Radiation Induced Substrate Currents Modeling

Publication Year: 2008, Page(s):2028 - 2035
Cited by:  Papers (4)
| | PDF (1106 KB) | HTML

This paper describes some new solutions of the diffusion equation in a semiconductor slab. These solutions are computed for Dirichlet null boundary conditions in the top and bottom planes of the slab and with a null internal electric field. The proposed model takes into account a finite diffusion length and an inclined trajectory. Such solutions may be used for radiation induced substrate diffusio... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA