IEEE Transactions on Device and Materials Reliability

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Publication Year: 2014, Page(s):C1 - C4
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• IEEE Transactions on Device and Materials Reliability publication information

Publication Year: 2014, Page(s): C2
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• Technological Journey Towards Reliable Microheater Development for MEMS Gas Sensors: A Review

Publication Year: 2014, Page(s):589 - 599
Cited by:  Papers (11)
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Micromachined silicon platforms, owing to some of its inherent advantages including miniaturized dimensions, ultralow power consumption, reduced batch fabrication cost, long-term reliability, and compatibility with standard CMOS fabrication technology, attracted the attention of solid-state gas sensor researchers, particularly since the last decade. As the semiconducting gas sensing thin film on t... View full abstract»

• Migration of Sintered Nanosilver on Alumina and Aluminum Nitride Substrates at High Temperatures in Dry Air for Electronic Packaging

Publication Year: 2014, Page(s):600 - 606
Cited by:  Papers (2)
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Joining semiconductor chips at low temperature (below 523 K) by sintering nanosilver paste is emerging as an alternative lead-free solution for power electronic packaging, particularly in high-temperature applications, because of the high melting temperature of silver (1234 K). However, silver is susceptible to migration. In this paper, we study the effects of dc bias, electrode spacing, and tempe... View full abstract»

• Aging Statistics Based on Trapping/Detrapping: Compact Modeling and Silicon Validation

Publication Year: 2014, Page(s):607 - 615
Cited by:  Papers (9)
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Design for reliability is an increasingly important design step at advanced technology nodes. Aggressive scaling has brought forth reliability issues, such as negative bias temperature instability (NBTI). The aging process due to NBTI exhibits a significant amount of variability for a single device and for multiple devices. As a result, long-term reliability prediction from short-term stress measu... View full abstract»

• Impact of Sampling Rate on RTN Time Constant Extraction and Its Implications on Bias Dependence and Trap Spectroscopy

Publication Year: 2014, Page(s):616 - 622
Cited by:  Papers (5)
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Inaccuracy in extraction of random telegraph noise (RTN) time constants due to an improper choice of measurement sampling rate is investigated. The sampling rate requirement for reliable extraction of RTN emission and capture times is analyzed. Consequences on transistor RTN bias dependence analysis and trap spectroscopy are discussed. View full abstract»

• Characterizations of Nanosilver Joints by Rapid Sintering at Low Temperature for Power Electronic Packaging

Publication Year: 2014, Page(s):623 - 629
Cited by:  Papers (3)
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Nanosilver paste is a promising lead-free die-attach material suitable for power electronic packaging, particularly for high-temperature applications. Compared with traditional hot pressing to sinter nanosilver, rapid sintering by a pulse current is able to sinter nanosilver in less than a second. To investigate the nanosilver sintering process during rapid sintering, we characterize the temperatu... View full abstract»

• Scintillation Conditioning of Tantalum Capacitors With Manganese Dioxide Cathodes

Publication Year: 2014, Page(s):630 - 638
Cited by:  Papers (1)
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Scintillation testing is a method that activates the self-healing mechanism in tantalum capacitors. In preliminary experiments, the deliberate activation of self-healing yielded up to 100% higher breakdown voltages in weak parts that had an increased risk of ignition failure. This improvement results in better performance under surge current conditions. This paper demonstrates that scintillation c... View full abstract»

• Simulation Study of the Single-Event Effects Sensitivity in Nanoscale CMOS for Body-Biasing Circuits

Publication Year: 2014, Page(s):639 - 644
Cited by:  Papers (1)
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The sensitivity of single-event effects (SEEs) in nanoscale CMOS for body-biasing circuits has been investigated. For PMOS hits, it is found that forward-biasing the body for high-speed applications can suppress the SET pulses greatly. Reverse-biasing the body for low-power applications, however, does not reduce the SEE vulnerability compared with operation when the body grounded. The body-biasing... View full abstract»

• A Design for In-Situ Measurement of Optical Degradation of High Power Light-Emitting Diodes Under Accelerated Life Test

Publication Year: 2014, Page(s):645 - 650
Cited by:  Papers (6)
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To better understand the reliability problem in high-power light-emitting diodes (LEDs), an online test is critical under an accelerated life test. In this paper, an experimental equipment was proposed for in situ measurement to evaluate the degradation of LED's optical properties. Signals such as illuminance and correlated color temperature were transmitted by the heat-resistant optical cable and... View full abstract»

• Investigation on Electrical Degradation of High Voltage nLDMOS After High Temperature Reverse Bias Stress

Publication Year: 2014, Page(s):651 - 656
Cited by:  Papers (2)
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The breakdown voltage (BV) and on resistance (Rdson) degradation of the 700-V n-type single-RESURF lateral double-diffused MOS (nLDMOS) after high-temperature reverse bias (HTRB) stress have been investigated in this work. A detail analysis that shows good agreement with the experiments is proposed based on electrostatic force microscope (EFM) testing, charge-pumping testing, and TCAD s... View full abstract»

• Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs

Publication Year: 2014, Page(s):657 - 663
Cited by:  Papers (6)
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In this paper, we present the results of an experimental analysis of the degradation induced by negative-bias temperature stress (NBTS) in trench-gated p-channel power MOSFETs. Threshold voltage and carrier mobility are affected by hole trapping in bulk oxide and interface-state generation due to oxide electric field effects. A fast recovery phase occurs when gate bias is removed or reduced in ord... View full abstract»

• A Single-Bit and Double-Adjacent Error Correcting Parallel Decoder for Multiple-Bit Error Correcting BCH Codes

Publication Year: 2014, Page(s):664 - 671
Cited by:  Papers (1)
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This paper presents a novel high-speed BCH decoder that corrects double-adjacent and single-bit errors in parallel and serially corrects multiple-bit errors other than double-adjacent errors. Its operation is based on extending an existing parallel BCH decoder that can only correct single-bit errors and serially corrects double-adjacent errors at low speed. The proposed decoder is constructed by a... View full abstract»

• Program Disturb Induced by Interface-Trap-Assisted Field and Thermal Electron Emission in the Channel of Split-Gate Memory Cell

Publication Year: 2014, Page(s):672 - 680
Cited by:  Papers (4)
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A systematic study of program-disturb mechanisms in split-gate memory in the temperature range -45 °C to 150 °C is presented. At low temperatures, the dominant program disturb is initiated by interface-trap-assisted band-to-band tunneling in the split-gate channel area, whereas at high temperatures, it is initiated by surface generation in the select-gate channel area. The effects of... View full abstract»

• A Study on the Fatigue Behavior of Anisotropic Conductive Adhesive Film

Publication Year: 2014, Page(s):681 - 688
Cited by:  Papers (1)
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In this paper, the low cycle fatigue (LCF) tests were performed for anisotropic conductive adhesive films (ACFs). The effect of temperature on the tensile mechanical properties of ACFs was investigated. It was found that, with the increase in temperature, the tensile strength of ACFs decreases and its fracture strain increases resulting in lower Young's modulus. The stress-control LCF experiments ... View full abstract»

• A Degradation Model of Double Gate and Gate-All-Around MOSFETs With Interface Trapped Charges Including Effects of Channel Mobile Charge Carriers

Publication Year: 2014, Page(s):689 - 697
Cited by:  Papers (7)
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The reliability of multigate metal-oxide-semiconductor (MOS) devices is an important issue for novel nanoscale complementary MOS (CMOS) technologies. We present an analytic degradation model of double-gate (DG) and gate-all-around (GAA) MOS field-effect transistors (MOSFETs) in the presence of localized interface charge. Furthermore, we consider the effect of channel mobile charge carriers that si... View full abstract»

• Study of Stresses and Plasticity in Through-Silicon Via Structures for 3D Interconnects by X-Ray Micro-Beam Diffraction

Publication Year: 2014, Page(s):698 - 703
Cited by:  Papers (9)
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X-ray microbeam diffraction measurements were conducted for copper (Cu) through-silicon via (TSV) structures. This technique has the unique capability to measure stress and deformation in Cu and in silicon with submicron resolution, which enables direct observation of the local plasticity in Cu and the deformation induced by thermal stresses in TSV structures. Grain growth in Cu vias was found to ... View full abstract»

• Atomistic Pseudo-Transient BTI Simulation With Inherent Workload Memory

Publication Year: 2014, Page(s):704 - 714
Cited by:  Papers (6)
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Bias Temperature Instability (BTI) is a major concern for the reliability of decameter to nanometer devices. Older modeling approaches fail to capture time-dependent device variability or maintain a crude view of the device's stress. Previously, a two-state atomistic model has been introduced, which is based on gate stack defect kinetics. Its complexity has been preventing seamless integration in ... View full abstract»

• A Novel 3D Integration Scheme for Backside Illuminated CMOS Image Sensor Devices

Publication Year: 2014, Page(s):715 - 720
Cited by:  Papers (6)
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A novel backside-illuminated CMOS image sensor (BSI-CIS) scheme and process are developed and demonstrated. This innovative scheme can be realized without fusion oxide bonding and through-silicon via (TSV) fabrication. This wafer-level TSV-less BSI-CIS scheme includes transparent ultrathin silicon (~ 3.6 μm) and uses several bonding technologies. The characterization and assessment results ... View full abstract»

• Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under ${}^{60}\hbox{Co}$ Gamma Irradiation

Publication Year: 2014, Page(s):721 - 725
Cited by:  Papers (2)
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The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I-V ) and capacitance-voltage (C-V ) measurements. The electrical characteristics were measured at... View full abstract»

• High Breakdown Voltage and Low Thermal Effect Micromachined AlGaN/GaN HEMTs

Publication Year: 2014, Page(s):726 - 731
Cited by:  Papers (4)
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This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath the HEMT, a 300-nm SiO2 and a 20-μm copper layer are deposited to form the GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs that are by previously de... View full abstract»

• Soft-Error Performance Evaluation on Emerging Low Power Devices

Publication Year: 2014, Page(s):732 - 741
Cited by:  Papers (11)
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Radiation-induced single-event upset (SEU) has become a key challenge for cloud computing. The proposed introduction of low bandgap materials (Ge, III-Vs) as channel replacement and steep switching devices for low-voltage applications may induce radiation reliability issues due to their low ionization energy and device architecture. In this paper, the soft-error generation and propagation in Si Fi... View full abstract»

• Time Evolution Degradation Physics in High Power White LEDs Under High Temperature-Humidity Conditions

Publication Year: 2014, Page(s):742 - 750
Cited by:  Papers (21)
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A high temperature-humidity test is commonly employed to evaluate the humidity reliability of electronic devices. For an integrated circuit, the degradation mechanism under the high temperature-humidity test is metal corrosion, and Peck's model is used for extrapolating the test results at accelerated test conditions to the normal operating condition. Such extrapolation is possible as the underlyi... View full abstract»

• Effects of Extreme Temperature Swings ( $-hbox{55} ^{circ}hbox{C}$ to 250 $^{circ}hbox{C}$) on Silicon Nitride Active Metal Brazing Substrates

Publication Year: 2014, Page(s):751 - 756
Cited by:  Papers (12)
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Reliability of power electronic substrates has been one of the main issues of high-temperature packaging technologies. Widely used direct bonded copper (DBC) substrates, if subjected to wide temperature swings, suffer from copper layers peeling off from a ceramic because of the large thermal stresses resulting from the difference in coefficient of thermal expansion (CTE) between the copper and the... View full abstract»

• Experimental and Numerical Investigation Into the Influence of Chip-on-Film Package on Component Operating Temperature in Natural Convection

Publication Year: 2014, Page(s):757 - 765
Cited by:  Papers (1)
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The thermal issues of chip-on-film (COF) packages are becoming increasingly important for high-pin-count chips, whose performance is becoming increasingly limited by the maximum power that can be spread without exceeding the maximum junction temperature. This paper conducts an experimental investigation to investigate the relationship between power dissipation and the surface temperature of the th... View full abstract»

Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.