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“””the invention relates to a method for monitoring the breakdown of a pn junction in a semiconductor component and to a semiconductor component adapted to carrying out said method . according to the method , optical radiation which is emitted if a breakdown occurs on a pn junction is detected by a photosensitive electronic component integrated into the semiconductor component . the supply of the pn junction is controlled according to the detected radiation to prevent a complete breakdown during operation of the semiconductor component . the method according to the invention and the semiconductor component adapted thereto permit the operating range of the semiconductor component to be extended and the power output to be increased without the risk of destruction .”