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A light -emitting diode according to one embodiment comprises a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer wherein the mesa includes: a semiconductor laminate including an active layer and a second conductive type semiconductor layer; a ZnO layer located on the second conductive type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa and having an opening that exposes the ZnO layer; a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductive type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer throu gh the opening of the lower insulation layer and spaced apart from the first pad metal layer in a horizontal direction; and an upper insulation layer covering the first pad metal layer and the second pad me tal layer and having a first opening and a second opening which expose the first pad metal layer and the second pad metal layer respectively wherein the ZnO layer below the opening of the lower insulation layer has a thickness thinner than that of the ZnO layer cove red with the lower insulation layer.