15554842
Resistive bridge fault modeling, simulation and test generation
In this work/sup 1/ we develop models of resistive bridging faults and study the fault coverage on ISCAS85 circuits of different test sets using resistive and zero-ohm bridges at different supply voltages. These results explain several previously observed anomalous behaviors. In order to serve as a reference, we have developed the first resistive bridging fault ATPG, which attempts to detect the maximum possible bridging resistance at each fault site. We compare the results of the ATPG to the coverage obtained from other test sets, and coverage obtained by using the ATPG in a clean-up mode. Results on ISCAS85 circuits show that stuck-at test sets do quite well, but that the ATPG can still improve the coverage. We have also found that the loss of fault coverage is predominantly due to undetected faults, rather than faults in which only a small resistance is detected. This suggests that lower-cost fault models can be used to obtain high resistive bridge fault coverage.
11931234
Optimal voltage testing for physically-based faults
In this paper we investigate optimal voltage testing approaches for physically-based faults in CMOS circuits. We describe the general nature of the problem and then focus an two fault types: resistive bridges between gate outputs that cause pattern sensitive functional faults and opens in transmission gates that cause delay faults. In both cases, the traditional stuck at model is inadequate. The test vector to sensitize and propagate a resistive bridging fault is not unique. The traditional greedy test vector selection is optimistic, with some choices having poor real coverage. We realistically model the fault and fault coverage, and describe an optimal selection strategy. In a transmission gate with an open NMOS or PMOS device, the output voltage is degraded, increasing delay and reducing noise margin. We model this fault and show how low-voltage testing can be used to detect it. Our goal in applying these techniques to all important fault types is to maximize the real coverage of voltage tests, thereby minimizing the number of relatively slow Iddq tests required to achieve high quality.
17178263
Accurate fault modeling and fault simulation of resistive bridges
This paper presents accurate fault models, an accurate fault simulation technique, and a new fault coverage metric for resistive bridging faults in gate level combinational circuits at nominal and reduced power supply voltages. We show that some faults have unusual behavior, which has been observed in practice. On the ISCAS85 benchmark circuits we show that a zeroohm bridge fault model can be quite optimistic in terms of coverage of voltage-testable bridging faults.
195349403
Stack-based typed assembly language
326056
A circuit level fault model for resistive bridges
Delay faults are an increasingly important test challenge. Modeling bridge faults as delay faults helps delay tests to detect more bridge faults. Traditional bridge fault models are incomplete because these models only model the logic faults or these models are not efficient to use in delay tests for large circuits. In this article, we propose a physically realistic yet economical resistive bridge fault model to model delay faults as well as logic faults. An accurate yet simple delay calculation method is proposed. We also enumerate all possible fault behaviors and present the relationship between input patterns and output behaviors, which is useful in ATPG. Our fault simulation results show the benefit of at-speed tests.
10826914
Thermal modeling of single event burnout failure in semiconductor power devices
Abstract Experimental investigations of single event burnout (SEB) of power devices due to heavy ion impacts have identified the conditions required to produce device failure. A key feature observed in the data is an anomalistic secondary rise in current occurring shortly after the ion strike. To verify these findings including the thermally induced secondary plateau, simulations have been performed on the model single event burnout. The new models include additional thermally dependent electrical components to capture thermally induced physical effects. Through the inclusion of analytic temperature models coupled with the electrical model, the electrical response is predicted with reasonable accuracy. The simulations provide order-of-magnitude estimates as well as prediction of phenomenological features such as the secondary rise in current. This work represents a first attempt to characterize thermal failure of power devices due to heavy ion impacts by including temperature dependent components that until now have not been modeled. The thermal model in the present work produces qualitative agreement with experiments on SEB that have been previously unexplained.
17093290
An efficient algorithm for finding the k longest testable paths through each gate in a combinational circuit
Testing the K longest paths through each gate (KLPG) in a circuit detects the smallest local delay faults under process variation. In this work a novel automatic test pattern generation (ATPG) methodology to find the K longest testable paths through each gate in a combinational circuit is presented. Many techniques are used to significantly reduce the search space. The results on the ISCAS benchmark circuits show that this methodology is very efficient and able to handle circuits with an exponential number of paths, such as c6288.
14018858
Single event burnout in power diodes: Mechanisms and models
Power electronic devices are susceptible to catastrophic failures when they are exposed to energetic particles; the most serious failure mechanism is single event burnout (SEB). SEB is a widely recognized problem for space applications, but it also may affect devices in terrestrial applications. This phenomenon has been studied in detail for power MOSFETs, but much less is known about the mechanisms responsible for SEB in power diodes. This paper reviews the current state-of-knowledge of power-diode vulnerability to SEB, based on both experimental and simulation results. It is shown that present models are limited by the lack of detailed descriptions of thermal processes that lead to physical failure.