Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime
Abstract Special techniques are needed to reliably measure the ultra thin film and interfacial properties. For this purpose we have used and/or further developed several techniques: Fowler–Nordheim (FN) electron tunneling current oscillations (FNCOs); spectroscopic ellipsometry (SE); a novel application of SE called spectroscopic immersion ellipsometry (SIE); atomic force microscopy (AFM) along with Fractal analysis. In this study we review our recent results on ultra thin SiO 2 films for film thickness measurements, the kinetics of the initial regime of Si oxidation, and interfacial roughness and the effects of roughness on Si oxidation and interfacial electronic properties.