Use of minority carriers in noise spectroscopy for the determination of local level parameters in 6H - SiC
A method of recharging a local level by minority carriers has been used to determine the local level parameters in n-type 6H - SiC. Measurements have been made in the temperature range 300 - 600 K. For this level the capture cross section of electrons depends exponentially on temperature: , with where is the energy gap between the level position and the bottom of the conduction band. Injection through a forward-biased p - n junction has been used to introduce minority carriers (holes) into the n-region. A set of parameters: , , and the level concentration has been determined without any fitting procedure.