The use of ICP to determine delivery rates of transportable metal contaminants from metal organic liquid sources
Direct gas analysis was performed on metal organic (MO) liquid source bubblers em-ployed for MOCVD growth of vanadium doped and undoped GaAs and AlGaAs thin films. Using either direct or standard addition methods, the lower limit of quantitation (LLQ) for transportable Si was 5 × 10s−11 moles/min with precision better than 10% (25 cc/min H2 carrier). The other transportable contaminants sought during a typical anal-ysis were P, S, Cd, Cu, Zn, Fe, Cr, Ni, Mo, Mn, Sn, Pb, Ca, Mg, and Ge. None of these were detected with a LLQ estimated to be less than 10s−10 moles/min.