Selective area LPE growth and open tube diffusion in InGaAs/InP
Techniques are described in which selective chemical etching, localised LPE growth and localised diffusion in In0.53Ga0.47As and InP were carried out. Spun-on silica films were employed as masks in these processes and its performance was found to be comparable with pyrolytic or rf deposited films. Localised LPE growth of In0.53Ga0.47As and in-situ etching enabled well-controlled islands of In0.53Ga0.47As embedded in InP to be produced. Orientation dependent growth rates were also identified. An open-tube diffusion technique based on an LPE growth system has been successfully used for diffusion of Zn into InP and In0.53 Ga0.47As from Sn solutions. A strong variation of diffusion depth in InP with Zn concentration in Sn has been observed at low Zn concentrations but a constant depth is approached for Zn concentrations greater than ∼0.08 atomic fraction.