Transverse currents and contact resistances in the quantum Hall regime of Si-MOS structures
Transverse currents up to amounts comparable with the source-drain current were applied to the Hall probes of Si-MOS Hall devices in the quantum Hall regime. The currents were generated by resistive loading of the Hall probes and overcompensation of the Hall voltage by an external voltage source to evaluate the contact resistances. The resistances of the Hall probes, the source and drain contacts are qualitatively similar and show non-ohmic behaviour.