Electrochemical formation of AgxTiS2 at 300 K
Abstract The reaction of the layered dichalcogenide TiS 2 in a galvanic cell Ag ‖ Ag + , solv‖TiS 2 at 300 K results in the formation of two consecutive nonstoichiometric phases with 0.13(2)⩽ x ⩽0.19(8) and 0.35(1)⩽ x ⩽0.40. The upper phase limit is not a consequence of steric reasons but is governed by electronic aspects i.e. the correlation E (TiS 2 /TiS x − 2 )≙ E (Ag/Ag + ). The formation of stages with stage number > 2 is limited for kinetic reasons (lattice strain). Direct coulometric titration of the elements S and Se in aqueous or non-aqueous Ag + electrolyte was found to proceed quantitatively at 300 K to the corresponding binary chalcogenides Ag 2 Se and Ag 2 Te.