Heteroepitaxial growth of gallium phosphide on silicon
A new method of growing gallium phosphide on a silicon substrate is presented. The method includes an extra but simple process of depositing a thin phosphorus layer on a silicon substrate prior to the growth of gallium phosphide by a so-called halide transport method. Electronic and optical properties of the heterojunctions indicate that the interfaces between the gallium phosphide layers and silicon substrates had a higher quality than those previously reported.