Critical Evaluation of the Midgap-Voltage-Shift Method for Determining Oxide Trapped Charge in Irradiated Mos Devices
The validity of using midgap voltage shifts to determine radiation-induced oxide trapped charge is examined using thermally stimulated current (TSC), conductance, and C-V techniques. The assumption behind the midgap technique that all interface states are amphoteric Pb centers is shown to be not generally valid. Conductance measurements revealed a donor interface state in the upper half of the bandgap. Results obtained by combining data from TSC and high-frequency C-V measurements show the existence of three types of radiation-induced interface states: the Pb center, a donor state in the upper half of the bandgap, and an acceptor state in the lower half. No single surface potential exists that is the neutral point for Nit for all processes and radiation doses. Midgap voltage shifts do not generally correlate with oxide trapped charge determined from thermally stimulated current (TSC) measurements. The magnitude of the fractional deviation is typically less than a factor of unity but in some cases is as large as a factor of four. The significance of these errors needs to be determined for each application. Arguments and tests supporting the validity of using TSC measurements for determining oxide trapped charge are presented.