Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures
We present full-scale calculations of the optical absorption coefficient of a type-II InAs-AlGaSb superlattice at wavelengths around 10 mu m. We show that the optical matrix element responsible for such infrared absorption depends on a delicate balance between the electron-hole wavefunction overlap and the structural parameters. We also present a full description of the effect of electric-field-induced localization on optical spectra in this range of wavelengths.