Optical monitoring of the growth of a GaAs/AlGaAs superlattice
Dynamic optical reflectivity (DOR) is used to monitor, in real time, the chemical beam epitaxial growth of a 6 nm GaAs/AlGaAs superlattice. Good agreement with a theoretical simulation, assuming infinitely sharp interfaces, is achieved with monolayer sensitivity. The applicability of the DOR technique to real-time monitoring of superlattice growth is compared with ellipsometry and it is shown that the two techniques yield essentially identical information.