Raman scattering study of to phonon modes in InGaAsP/GaAs
We have studied the behaviour of TO phonon modes in InxGa1-xAsyP1-y grown on GaAs (100) and (111)A substrates by means of Raman scattering. It was found that the small peak which appeared between the GaP-like LO1 and InP-like LO2 modes is due to the GaP-like TO1 phonon mode. The mode calculation based on the cell isodisplacement theory was in good agreement with the experimental results.