X-ray characterization of ion-implanted and rapid thermal annealed silicon
Si+ and Ar+ ion implantation and rapid thermal annealing were investigated by double-crystal rocking curve analysis using a five-reflection beam conditioner. Theoretical simulation using X-ray dynamical diffraction theory enabled detailed strain-depth profiles to be calculated. Observation of diffuse scattering in the rocking-curve tails also allowed qualitative assessment of defect growth on annealing. It was found that, for implant doses of 1013 and 1014 atoms cm-2 at 100 keV, the strain was annealed out at 1100 degrees C. However, doses of 1015 atoms cm-2 or greater resulted in the growth of interstitial-type defects on annealing. Double Si+ implantation (2*1015, 150 keV+2*1015, 50 keV) and annealing at 1100 degrees C produced a strained, defective layer well below the surface at 0.3 mu m depth.