Nonlinear nonequilibrium processes in a silicon switch of high-power microwave radiation
The nonlinear dynamic interaction of high-power microwave radiation with a high-purity compensated silicon sample, driven or not by a laser pulse initiating nonequilibrium photoconductivity, has been investigated numerically. It is shown that this effect can be used in semiconductor switches of the phase of electromagnetic waves in the presence of strong thermal self-action of microwaves.