LETTER TO THE EDITOR: Preparation of gallium-doped ZnO films by oxidized ZnS films
Thin films of Ga-doped ZnO were prepared by oxidation of vacuum evaporated ZnS and GaO mixtures. The electrical and structural properties of ZnO films were investigated for different oxidation temperatures and GaO contents in evaporated ZnS powder. It was found that electrical conductivity of Ga-doped ZnO was increased by one order of magnitude compared with undoped films. The carrier mobility and concentration were also increased for Ga-doped ZnO films.