Influence of Temperature on Surface Morphology and Photoelectric Performance of CuAlO2 Thin Films
Abstract CuAlO2 thin films were prepared on sapphire substrate by sol-gel method. The influences of annealing temperature, heating rates and annealing time on composition, morphology and photoelectric performance of film were investigated. The results of X-ray power diffraction, scanning electron microscope, transmissivity, and hall parameter tests showed that the CuAlO2 phase was relatively pure when the annealing temperature was above 950 °C. The higher the temperature, the higher the peak position. Under the optimal conditions, CuAlO2 film exhibited the best transmittance (90%) and the highest conductivity (1.23 S cm−1). On this basis, increasing the heating rate and annealing time was in favor of enlarging the size of the particles and the film grain growth direction tended to be unified.