On the mechanism of PxOy emission from a silicon pyrophosphate-containing solid planar diffusion source
It is shown that within the temperature interval 900-1000 degrees C the emission of PxOy from a silicon pyrophosphate-containing solid planar diffusion source can be considered as diffusion controlled. Literature data about the decrease in source mass under thermal treatment can be interpreted by a model assuming PxOy diffusion in a homogeneous plane sheet and oxide evaporation from the sheet surface. On this basis the most probable values for the effective diffusivity coefficient of PxOy in the source at 900 and 1000 degrees C are determined.