DLTS study of deep levels in Si substrates created by plasma treatment
Deep levels created by hydrogen and oxygen plasma treatment in n-type Si substrates are investigated using deep-level transient spectroscopy (DLTS) in the temperature range 77-300 K. It has been established that both types of plasma treatment at temperatures ranging from 20 to 300 degrees C generate deep levels in the Si bandgap which can be connected with hydrogen- or oxygen-containing complexes and divacancy defects. The defects are situated in the Si substrate within about 1 mu m from the Au-Si interface.