Defects in CdTe single crystals grown by very fast vapor growth technique
Single crystals of CdTe were obtained by the very fast vapor growth technique. The four major defects, namely, multi-grains, lamellar, lateral, and micro-twins, which are fatal to the single crystallinity, were eliminated or limited by increasing the growth stability. This investigation indicates that the latent heat under high growth rate conditions should not be neglected. A model is developed to explain the effects of latent heat on the growth stability at the interface. A relationship between crystal morphologies and growth conditions was established. It strongly suggests that the above defects are growth stability related. The origin of twinning, dominated by growth stability, is discussed in this paper.