Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3
This report describes the homo-epitaxial growth of InSb by the Metal-Organic Chemical Vapor Deposition Method (MOCVD) using triethylindium (TEIn) and stibine (SbH3) for indium and antimony sources, respectively. Single crystal InSb layers were grown at 400° C. The gas flow rate ratio (= SbH3/TEIn) should be more than 8 in order to grow a layer with good morphology. The epitaxial layer was n-type, with a carrier density and mobility of 1.5 x 1016 cm-3 and 7.6 x 104 cm2/Vs, respectively, at 77 K. By inserting a buffer layer grown at 400° C, the single crystal InSb layer was grown even at 300° C.