Poly-3-methylthiophene/ solar cell formed by electrodeposition and processing
(CIS) thin films were electrodeposited and characterized for photovoltaic applications. As-deposited and selenized films exhibited different kinds of morphology. The conductivity type, carrier concentration and flat-band potential were determined from photoelectrochemical studies. Schottky barrier type photovoltaic junctions were formed by using a heavily doped PMeT (poly-3-methylthiophene, displaying nearly metallic behaviour) prepared by electropolymerization, and CIS obtained by electrodeposition. The photovoltaic structure formed and studied was an Mo/CIS/PMeT/grid Schottky barrier junction. A corrected solar to electrical conversion efficiency of 1.4% was obtained in the case of the PMeT/CIS junction.