An analytical model for current-voltage characteristics of a small-geometry poly-Si thin-film transistor
An analytical model of the above-threshold characteristics of a small-geometry poly-silicon thin film transistor considering the grain boundary effect on the turn-on behaviour is proposed. Small geometry effects are also incorporated to develop an accurate expression for the threshold voltage and the current-voltage (I-V) characteristics in the turn-on region. Further, the channel length dependent threshold voltage proposed shows good agreement with experimental data and the I-V characteristics with channel dimensions 2 and 0.5 µm are in excellent agreement with experimental results confirming the validity of this model.