SOLID-STATE AND SEMICONDUCTOR LASERS: High-frequency analog modulation of a semiconductor laser
An investigation was made of high-frequency characteristics of GaAlAs injection lasers under continuous modulation conditions. The optical amplitude–frequency characteristics and the frequency dependence of the impedance made it possible to determine the equivalent circuits of two forms of lasers: a stripe laser and a laser with a channel in the substrate, which made it possible to optimize the input circuits of a laser light emitter. It was found that the channel-type laser had a highly linear modulation characteristic.