Photovoltaic properties of spray pyrolytic grown indium tin oxide (ITO)/silicOn junctions-dependence on substrate temperature
The photovoltaic properties of ITO/n-Si junctions prepared in the temperature range 300-460 degrees C by a spray pyrolysis technique have been studied. A maximum efficiency of 9.4% (under 100 mW cm-2 illumination) has been observed for cells prepared at 380 degrees C. The junctions are characterized by the conventional I-V, C-V and spectral response measurements. The spectral response of the junctions has shown that the peak photo conversion shifts to lower wavelengths with substrate temperature. The junctions are found to be quite stable with time. Overall, the data indicate (qualitatively) that the reaction products of the pyrolytic reaction, mainly HCl vapours, influence the interface considerably.