X-ray diffractometer as a tool for examining lattice relaxation phenomena
The use of an X-ray diffractometer is proposed for examining the lattice relaxation effects accompanying the transfer of DX centres and EL2 defects between their stable and metastable states. The comparison of experimental results for GaAlAs:Te (with DX centres), semi-insulating GaAs and low-temperature GaAs (with EL2 defects) is given.