Design of a triple pocket multi-gate material TFET structure for low-power applications
In this paper we propose a triple-pocket multi-gate material TFET (TP-TFET) device structure for a low-power and high-performance circuit design. The proposed device structure integrates the good features of both the conventional MOSFET and tunnel FET. This is achieved through three doped pockets and dual work-function gate material on near the source–channel junction. In the proposed device, the ON state conduction mechanism is dominated by an over-the-barrier thermal diffusion of carriers, thereby offering a high-value drive current. On the other hand, the subthreshold conduction mechanism is dominated by the tunnelling of carriers, thereby incurring a very small leakage current and offering a small subthreshold slope. We use 2D TCAD device simulations for the analysis of the TP-TFET and its comparison with the existing pocketed-heterogate TFET (PHG-TFET). We observe that the proposed TFET offers the average subthreshold slope (SSavg) of 2.85 mV dec−1 and ON current of ∼230 µA µm−1 as compared to the existing PHG-TFET, which offers SSavg of 44.91 mV dec−1 and I ON = ∼62 µA µm−1. Further, some benchmark circuits are implemented using these devices. A ring oscillator designed using the TP-TFET shows approximately a 6× higher frequency as compared to that designed using the PHG-TFET. The power delay product of the NAND gate and NOR gate obtained using these devices differ by approximately 3× to 20× as the supply voltage is decreased from 1.0 to 0.5 V.