Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes
We report on the demonstration of InGaN/GaN dot-in-a-wire tunnel injection white-light-emitting diodes on Si, wherein electrons and holes are injected into the quantum dot active region through two separate InGaN injector wells. Significantly reduced electron overflow is realized without the use of any Al-containing electron blocking layer. Moreover, the InGaN hole injector well, which is positioned between the quantum dot active region and p-GaN, can harvest electrons that have escaped through the near-surface region of nanowires.