An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography
Synchrotron x-ray topography was used to evaluate dislocation generation for liquid phase heteroepitaxy of strained layer on n-type InAs substrates. Severe misfit dislocation generation is observed for epilayer thicknesses of 4 and many of these form threading dislocations which are observed at the surface. However, for thicker epilayer growth (up to 70 in this study), this misfit dislocation generation appears to be confined to a region close to the heterointerface, with few threading dislocations approaching the surface. These data correlates well with photoluminescence and optical microscopy measurements.