Reliability challenges for barrier/liner system in high aspect ratio through silicon vias
Abstract The reliability results for barrier/liner systems in different high aspect ratio (5 × 50 μm) through silicon vias (TSV) are presented. Quite a few factors can influence the TSV barrier/liner reliability performance, including the TSV trench etch process, the oxide liner material/thickness, etc. The challenges for more advanced TSV technology nodes (e.g. 3 × 40 μm) are also discussed and possible solutions are proposed.