The Peierls phase transition in n-Ge caused by impurity interaction
The study of the electron paramagnetic resonance in Ge:As has revealed that the insulating state in uncompensated semiconductors is preserved near the insulator-metal phase transition because of the appearance of lattice distortions. The latter are caused by the interaction of the spins localized on impurity atoms due to the spin-Peierls transition. In Ge:As, this effect manifests itself in the concentration range n = n = 3 × 1017–3.7 × 1017 cm−3.