A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions
Abstract The effects of static, alternating and dynamic stress conditions on the degradation rate of 0.8μm n- and p-channel LDD MOS transistors have systematically been investigated and compared. The shifts of the threshold voltage, transconductance, linear drain current and charge pumping current were used to monitor the transistor degradation. The results suggest that the aging induced by a dynamic stress cannot be directly explained with static stress models, essentially because it is highly dependent on a larger number of parameters (biases and durations of the top and bottom levels of the pulses, transient times). The correlation of static and dynamic stresses also clarifies the degradation mechanisms, in particular the role of hot holes in the generation of interface states.