Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
High purity GaxIn1-x As has been grown lattice matched on <111>B InP by liquid phase epitaxy. Silicon, the residual impurity, is purged from the melt by long time baking in a hydrogen atmosphere with slight ambient water vapor concentration. Epitaxial layers with a net electron concentration as low as 3.5 × 1014 cm-3 and a liquid nitrogen mobility of 70,000 cm2/Vsec have been grown. The room temperature mobility is shown to be significantly higher than GaAs over a wide range of net electron concentrations useful for device applications, with the highest value of μ300 = 13,800 cm2/Vsec on a sample with n = 1.9 × I015 cm-3