Electrical switching behaviour of semiconducting aluminium telluride glasses
Semiconducting chalcogenide glasses, $AI_xTe_{100-x}$ with the atomic percentage of ahminim (x) varying between 15 and 25, have been prepared by the vacuum sealed-melt quenching technique. The I-V characteristics of these samples have been measured at four different temperatures using a custom-built PC-based system. All the compositions studied are found to exhibit a current- controlled negative resistance irreversible switching behaviour. Furthermore, it is observed that there is an increase in the switching field $'E_t'$ of $AI_xTe_{100-x}$ glasses with increasing Al content, The threshold field for a given composition is found to decrease with increasing temperature.