Temperature Effect on Electronic Parameters of CuPc/n-Si Heterojunction
This paper reports the effect of temperature on electronic properties of Al/CuPC/n-Si heterostructure diodes. The diode-controlling parameters are extracted from the conventional current–voltage (I–V) curve of the fabricated Al/CuPc/n-Si heterojunction diode. The calculated parameters, such as barrier height (Φb), ideality factor (n), and series resistance (Rs), obtained from experimental results, show significant temperature dependence and demonstrate improvement in their values in the temperature ranging from 300 K to 330 K. These extracted values are further verified by determining them while using Cheung functions and Norde’s technique. The values of n and Φb show that the former and the latter decreases and increases, respectively, with increasing temperature. This is attributed to thermionic emission theory. The fabricated heterojunction diode shows thermal stability, and the space-charge-limited current (SCLC) transport is the most frequently occurring process in the fabricated device at all temperatures.