MOCVD of ferroelectric thin films
A low-pressure chemical vapor deposition system for growing ferroelectric thin PZT films has been developed. It consists of a dispensing and vaporizing system for up to four liquid metal precursors and a cold wall reactor, where the reactions are carried out at pressures below 1 Torr and at temperatures between 330 and 500°C. The thickness of the deposited films ranged from 10 nm to 1 μm. The investigated films in this report are lead-titanate, PbTiO 3 , and lead-zirconate-titanate Pb(Zr,Ti)O 3 .