Radiation-induced interface states of Si-SiO_2 by intense pulse X-ray and their annealing
Irradiated by intense pulse X-ray, density of Si-SiO 2 interface states and annealing process are measured. Experiment results show that radiation-induced interface traps in Si-SiO 2 increase with the dose. A distribution about density of Si-SiO 2 interface states vs. radiation dose is summarized and thus radiation impairment effects and mechanism are discussed. Experiment shaw that:(1) interface states induced by intense radiation saturated easily, (2) that the more radiation-induced interface states, the more rapid they eliminate in annealing process, (3) there exist retardation in annealing process, which means after annealing process, the threshold voltage shift caused by high dose radiation goes smaller than that caused by low dose radiation, (4) an annealing formula about threshold voltage shift vs. annealing time is deduced to the retardation.