In situ P-doped Si and Si1−xGex epitaxial films grown by remote plasma enhanced chemical vapor deposition
Remote plasma-enhanced chemical vapor deposition has been applied to growin- situ doped n-type epitaxial Si and Si1−xGex with the introduction of phosphine. Growth rates and dopant incorporation have been studied as a function of process parameters (temperature, rf power, and dopant gas flow). Growth rates remain unaltered with the introduction of PH3 during deposition, unlike in many other low temperature growth techniques. Phosphorus incorporation shows a linear dependence on PH3 flow rate, but has little if any dependence on the other growth parameters, such as radio frequency power and substrate temperature, for the ranges of parameters that were examined. Phosphorus concentrations as high as 4 × 1019 cm−3 at 14 W have been obtained.