Group-V composition control for InGaAsP grown by gas source molecular beam epitaxy
Based on our kinetics models for gas source molecular beam epitaxy of mixed group-V ternary materials, the group-V composition control in InyGa1−yAs1−xPx epilayers has been studied. The P or As composition in InyGa1−yAs1−xPx (lattice matched to InP or GaAs) can be obtained from a simple equation for substrate temperatures below 500°C. This has been verified by a series of experimental results.