Simulation of the transient radiation response for GaAs thyristors
Numerical simulations of the transient response of gallium arsenide (GaAs) thyristors to bursts of ionizing radiation are reported. The device simulator BAMBI 2.0, with incorporated GaAs transport models, is used. BAMBI is a 2-D time-dependent transport code using accurate models, such as doping- and electric-field-dependent carrier mobilities and avalanche multiplication. Furthermore, the physical parameters can be very easily modified to isolate the effect of any particular parameter in the device response. This feature is used to study the effect of carrier lifetime on the switching behavior of the irradiated GaAs thyristors by comparing simulation results with the experimental data. The structures simulated are 1-D structures, but the full 2-D simulation is used. Good agreement exists between experimental and simulation results, including the effects of carrier lifetime on the radiation response and the phenomena of delayed switching. >