Minority carrier recombination in p-type CdxHg1-xTe
Minority carrier recombination in p-type CdxHg1-xTe with x near 0.2 has been studied. The experiments were performed over the equilibrium hole concentration range of 1016-5*1017 cm-3 at temperatures between 77 and 300 K. Measurements have been made with a picosecond laser based optoelectronic arrangement with a time resolution of the order of 30 ps. The results have been compared with theoretical calculations. It is shown that Auger-7 is the dominant lifetime-limiting mechanism for non-equilibrium electron-hole recombination in narrow-gap p-type CdxHg1-xTe with hole concentrations exceeding 4*1016 cm-3.