Unexpected increase in the thermal generation rate of bulk GaAs due to electron-beam metallization
It is demonstrated that the thermal generation rate in the bulk depletion regions of GaAs p-n junctions of samples metallized in e-beam evaporators can be as much as three-orders-of-magnitude greater than those metallized in thermal evaporators. This degradation is unexpected because the low-energy radiation present in such e-beam evaporation systems is unable to cause the atomic displacement responsible for defect creation in GaAs. Results derived from samples metallized in the e-beam evaporator indicate, however, that low-energy electrons are somehow involved in the formation of the defects responsible for the increased generation rate. Experiments performed in controlled-radiation environments have demonstrated clearly that simple radiation damage either from electrons or from X-rays is insufficient to degrade these GaAs devices. The simple diffusion of impurity ions in the absence of a high fluence of a low-energy electrons is also insufficient. Therefore, the experimental results suggest a damage mechanism in which the presence of both low-energy electrons and impurity ions is necessary to cause the increase in generation rates observed in bulk GaAs. >