Energieanalyse im Elektronenstreudiagramm einer dünnen Silizium-Folie
The energy distribution of electrons (47 keV) scattered by thin foils of silicon was measured by means of an electrical retarding field. Laue spots, Kikuchi lines and the region of the background near the primary spot from where the Kikuchi line originates, were investigated. The spectra show characteristic differences indicating a high portion of multiple energy-losses (of 16,9 eV) in the Kikuchi lines and in the background region, and a small portion in the Laue spots, indicating the different ways by which electrons are scattered into the various scattering angles.