Electrochemically synthesized CuInSe2 thin films from non-aqueous electrolyte for solar cell applications
Highly polycrystalline CuInSe2 (CIS) thin films have been electrodeposited from non-aqueous ethylene glycol (EG) solvent on fluorine-doped tin-oxide-coated glass substrates at 130 °C. The co-deposition potential for Cu, In and Se was optimized by using cyclic voltammetry. CIS layers have been electrodeposited from −1.1 V to −1.5 V versus the Ag/AgCl reference electrode. The effect of selenization on structural, morphological, optical and compositional properties has been studied extensively. Highly crystalline CIS thin films are electrodeposited for all reported growth potentials without post-annealing treatment. The Raman spectra of stoichiometric CIS thin films showed a dominant A1 mode with features receptive to the crystalline quality of the layers. Noticeable changes in the surface morphology and composition of films deposited at different deposition potential were observed. All CIS layers were void free, compact, uniform, and well adherent to the substrates with particle size ~1–3 μm. Both as-deposited and selenized samples were Cu-rich, however, the composition of selenium remained closer to the ideal value, 50%. A typical solar cell prepared at −1.3 V measured V OC = 0.316 V, J SC = 26 mA, FF = 49, and η = 4.2, under illuminated conditions at 100 mW cm−2.