CORRIGENDUM: Pressure dependence of the Pb centre measured by voltage transient spectroscopy
The pressure dependence of the electronic gap states at the (111) Si-SiO2 interface which are associated with the paramagnetic defect termed the Pb centre was studied with voltage transient spectroscopy. This paper presents detailed descriptions of the experimental techniques, theory of the measurement and data analysis. The Pb centre is an amphoteric defect with two transition energies in the Siband gap. The energy for the transition from double to single occupancy by holes was found to shift towards the valence band edge with increasing pressure, in agreement with theoretical predictions for the Si dangling orbital model of the Pb centre.