Towards identification of localized donor states in InN
Transport studies of as-grown and proton-irradiated n-InN have been performed aiming at verification of the nature of localized donor states resonant with the InN conduction band. These resonant donor states (RDS) show a clear contribution to the electrical conduction in low electron concentration InN epitaxial layers. We used proton irradiation to increase the number of incorporated native point defects of donor character in InN layers. Then, the performed studies of pressure dependence of the Hall electron concentration clearly show no increase in the number of RDS in samples exposed to irradiation in spite of the increase in the conducting electron concentration.