Effect of thermal treatment on the electrotransport properties of thin-film In2O3, ZnO materials and the multilayer (In2O3/ZnO)83 heterostructure
The effect heat treatment has on the electrotransport mechanisms in films of ZnO and In2O3, and in a multilayer (In2O3/ZnO)83 structure obtained via ion-beam sputtering, is studied. It is shown that there is a mechanism of weak electron localization in the In2O3 and (In2O3/ZnO)83 samples. The relaxation processes that occur during the heat treatment of In2O3 films are found to increase the length of elastic electron scattering, but to reduce this parameter in multilayer heterostructures.