Reversible recording of optical information in metal-dielectric-semiconductor structures
An investigation was made of the charging of traps in the dielectric layers of a metal-siliconnitride/ silicon-dioxide-semiconductor structure subjected to electrical pulses. An analysis was made of the methods for optical switching of this structure by laser radiation and for photoelectric reading. The principal energy and time characteristics were determined for an optical memory based on this structure. Organization of an optical reversible memory of 108 bit capacity was considered.