InP-Based InGaAsSbN Quantum Well Laser Diodes in 2μm Wavelength Region
InGaAsSbN quantum well (QW) laser diodes on InP in 2μm wavelength region were grown by molecular beam epitaxy (MBE). It was found that increase in Sb composition improved properties of InGaAsSbN QW laser diodes. We observed electroluminescence at 4.51μm at room temperature for InAsSbN QW laser diodes, and laser operation at 2.31 2μm at 190K. Annealing effects were also studied.