Novel self-epitaxy for inducing superconductivity in a topological insulator with a record-high transparency
The seminal proposal by Fu and Kane to use the superconducting proximity effect for engineering a topological superconducting (TSC) state in a topological insulator (TI) has been extended to various materials platforms and pursued by many researchers, with the hope to realize topological quantum computing. While epitaxially-grown Al on InAs realizing a highly-transparent interface was a major breakthrough in the pursuit of engineered TSC state, precise control of the chemical potential required for topological quantum computing has been an issue in InAs. In this respect, TIs in the original Fu-Kane proposal are more promising. However, epitaxial growth of a superconductor (SC) on the TI surface to realize a highly-transparent interface has never been achieved so far. Here we report our discovery that simply depositing Pd on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulator films leads to an epitaxial self-formation of PdTe$_2$ superconductor, which proximitizes the TI with a record-high interface transparency documented by Josephson-junction and SQUID devices. This will allow for easy fabrication of high-performance devices to address proximity-induced superconductivity in TIs and eventually the Majorana fermions that are expected to emerge there.