Performance of InGaN green light-emitting diodes with on-chip photodetectors based on wire-bonding and flip-chip configurations
In this work, we report the performance study of InGaN-based green light-emitting diodes (LEDs) with on-chip photodetectors (PDs) based on wire-bonding and flip-chip configurations. Compared with a conventional wire-bonding design, the LED-PD device, which incorporates a flip-chip design, can offer superior optical and thermal performances and, under an LED current of 200 mA, its light output and detected photocurrent increase by 37.7% and 14.7%, respectively. The different extents of enhancement in both light output and photocurrent are also studied by analyzing their optical, electrical, and thermal properties under varying LED currents. The results provide important guidance for the design of LED-PD integrated systems operating at different current densities.