Molecular beam epitaxy and characterization of heterostructures for magnetic sensing applications
quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used on a GaAs substrate, electron mobilities of at 300 K and at 20 K were routinely achieved for undoped structures. These excellent transport properties were utilized in a sensitive magnetoresistive sensor.