Barrier inhomogeneity in microscale Pt/MoS2 Schottky barrier diode
Temperature dependent electrical characterization of microscopic Pt/MoS2 Schottky diode fabricated using electron beam lithography has been studied. The diode exhibits rectifying current–voltage characteristics in the whole temperature range from room temperature to 80 K. As temperature decreases from 296 to 80 K, Schottky barrier height (SBH) decreases whereas ideality factor increases. The temperature dependence of barrier height of the diode is explained on the basis of barrier inhomogeneity model. Assuming the Gaussian distribution of SBH, the inhomogeneity level is found to be 64 and 102 meV in the temperature regions 80 K–140 K and 160 K–296 K, respectively. The present study can be useful in deeper understanding of electrical behavior of rectifying metal contacts to MoS2.