Liquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement
Liquid encapsulated Czochralski grown undoped p-type GaSb samples were studied by temperature-dependent Hall measurement. A shallow acceptor having an ionization energy of 32 meV was found to be the important residual acceptor associated with the p-type conduction of the undoped GaSb material. The carrier mobility data were fitted well by the relaxation time approximation model involving various carrier scattering processes. Other than the typical important scattering processes in limiting the carrier mobility in III-V semiconductors (i.e. ionized impurity, acoustic phonon, polar optical phonon and non-polar optical phonon), vacancy scattering has to be included so as to give a good fit to the experimental data. The concentrations of the vacancy and the 32 meV acceptor in the electron irradiated samples were found to increase significantly upon annealing, but such increase was not found in the non-irradiated sample.