High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
High-resolution synchrotron radiation Renninger scans (RS) have been used in the analysis of hybrid reflections in the InGaP/GaAs structure. Four-beam cases involving two Bragg (primary and secondary) and one Laue (secondary) reflections of the 002 Renninger scans for the GaAs substrate and the InGaP layer were analysed in detail. Different structures of asymmetry regarding the in-plane directions [110] and [1{\bar 1}0] were observed from the measurements of the same three families of four-beam cases, {1{\bar 1}}{\bar 1}/{1{\bar 1}}3, {20}0/{20}2 and {3{\bar 1}}{\bar 1}/{3{\bar 1}}3, at several φ positions. The comparison between the experimental and MULTX simulated scan clearly shows a marked asymmetry observed on the {20}0/{20}2 contributions. An asymmetric peak instead of the simulated dip appears due to the layer Laue secondary beam {20}0 crossing the layer/substrate interface to generate a hybrid peak. The break in the lattice coherence for this heterostructure is shown by the occurrence of an unexpected dip in the layer RS, which does not obey the mirror symmetry.