Analytical model for a current density versus voltage relation in n+ ? n+ devices
A new approach for the analytical model of n+ υ n+ devices is developed to express the effects of space–charge-limited current and high field carrier mobility saturation. The analytical solution is compared with a complete numerical resolution and successfully applied to experimental results. We show that laser-diffused resistors, fully compatible with modern CMOS processes, are well described by our analytical model up to high current density levels.