Noise temperature reduction by doping in ballistic n+–n–n+ nanodiodes
We analyse the noise temperature versus applied voltage of ballistic n+–n–n+ nanodiodes. We show that by increasing the doping density of the ballistic channel the minimum of the noise temperature decreases. In particular, noise temperature values can be suppressed below the absolute minimum value predicted for undoped n+–i–n+ ballistic diodes. This result could be of interest for the development of low-noise ballistic devices.