Photomagnetic effect in In(Ga)As/GaAs heteronanostructures with quantum dots and wells
The influence of quantum-size layers (InAs quantum dots, In0.2Ga0.8As quantum wells, and combined quantum-well/quantum-dot layers) and heteroepitaxial passivation of surface by an In0.5Ga0.5P layer on the photomagnetic effect in epitaxial n-GaAs layers has been investigated.