Study and optimization of ion-irradiated high Tc Josephson junctions by Monte Carlo simulations
High Tc Josephson junctions (HTc JJ) made by irradiation have remarkable properties for technological applications. However, the spread in their electrical characteristics increases with the ion dose. We present a simple model to explain the JJ inhomogeneities, which accounts quantitatively for experimental data. The spread in the slit’s width of the irradiation mask is the limiting factor. Monte Carlo simulations have been performed using different irradiation conditions to study their influence on the spread of the JJ characteristics. A “universal” behavior has been evidenced, which allows us to propose new strategies to optimize JJ reproducibility.