Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films
Abstract The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1×1015 cm–2 shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5×1014 to 5×1015 cm–2, the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the –OH contaminants and improve the dielectric and leakage properties.