Cobalt silicide formation on 6H silicon carbide.
Cobalt films (1, 25 and 100 A) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-800°C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 A Co films. In the 25 and 100 A Co films only Co-Co bonds were identified. The XRD pattern of the 100 A Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 800°C.