Distribution of damage clusters in ion-implanted silicon
The authors present a model for the description of damage accumulation during ion implantation which includes cluster formation and the subsequent transition to the amorphous phase. The model is compared with a two-dimensional Monte Carlo calculation of point defects created during low-energy boron implantation. This comparison confirms that the model is useful for describing implantation damage in cases where the accumulation of damage occurs by the overlap of individual damage cascades.