Damage Factor for Radiation-Induced Dark Current in InGaAs Photodiodes
In this paper, a compendium of InGaAs photodiode irradiation test results is presented. These photodiodes were irradiated either with <inline-formula> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula>-rays, protons, neutrons, electrons, pions, alpha particles, or carbon ions of various energies. The displacement damage dose formalism was found to be effective in describing the radiation-induced dark current increase of any of the studied InGaAs photodiodes. The exploitation of capacitance-bias voltage and current-bias voltage measurements also allows us to deduce a damage factor that can be used to assess the radiation-induced dark current in a great number of radiation environments.