Band structure of GaInAs-InP superlattices
The authors have calculated the band structure of GaInAs-InP lattice-matched superlattices using techniques based on the self-consistent pseudopotential method. Large non-parabolicities occur in the valence sub-bands in the plane perpendicular to the growth axis and these strongly affect the density of states of the valence sub-bands and the joint density of states for transitions to conduction sub-bands. The dispersions of the conduction sub-bands in the direction parallel to the growth axis effect the singularities in the joint density of states. In addition, the effects of modulation doping, potential offset and well width on the zone-centre states are shown. For the case of modulation doping the authors also calculate the changes in the valence band structure.