Static and dynamic hot carrier accelerated TDDB: Influencing factors and impact on product lifetime
Abstract In this paper we show the full picture of hot carrier accelerated TDDB from static single transistor tests to AC stress and finally, to real product assessments. The different influencing factors like voltage, temperature and Vth are shown to be similar for all stress types. Moreover, an AC frequency dependency – that can be explained by the considerable lifetime of hot carriers – results in a further reduction of the breakdown time. The field relevance is assessed by long term (4000 h) HTOL product tests.