Channel-carrier mobility parameters for 4H SiC MOSFETs
Abstract In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide–semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density ( D it ) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.