Well transmission coefficient in indium arsenic resonant tunneling microwave structures
The In0.53Ga0.47As/In0.52Al0.48As resonant tunneling microwave structures (InAs-based RTMS) is designed in energy band structure of interband with double quantum wells. The influences of carrier transmission coefficient in RTMS device with central barrier thickness which varied from 10A to 30A are studied by using theoretical calculation procedure. The transmission coefficients are calculated in considering band gap narrowing (BGN) effect due to the heavily doped effect. The well defined transmission coefficient has been expressed in use of smaller central barrier width, which results in the larger transmission coefficient as considering BGN effect.