Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors
The development with time of a diffusion profile exhibiting components due to volume and dislocation diffusion (Harrison's type B regime) is analysed in terms of the theory of LeClaire and Rabinovitch. The results of the analysis are applied to published diffusion profiles for As in , Zn in ZnTe and Cd and Se in CdTe and are shown to provide a consistent interpretation of the experimental data. Various alternative interpretations are shown to be inadequate. Evidence of Harrison's type A regime is also found in data for Hg diffusion in CdTe. At large volume diffusion lengths the possibility of involvement of diffusion via (sub)grain boundaries rather than isolated dislocations cannot be excluded.