Magnetic Field Imaging for non destructive 3D IC testing
Abstract Due to magnetic fields ability to penetrate through all materials used by the semiconductor industry, a unique ability not found in any other techniques, it has become an important technique for detecting shorts, leakages and opens in multi stacked Through Silicon Via samples. We show in this paper how Magnetic Field Imaging is being used to image the current in a TSV stacked silicon device with a new 3D analysis algorithm of the distance from the top of the stacked device to the current path.