Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cell
In this paper, through triple SuperFlash® cell, different results of high temperature operation lifetime (HTOL) after endurance cycling have been identified. Several factors affected this type device lifetime, including of program-erase cycling stress and bake procedure, are investigated. Due to special erase operation mode, a different behavior of charge trapping/de-trapping in triple SuperFlash® cell has been observed and analyzed. The mechanism which induced various HTOL results could be explained by the combined effects of voltage acceleration and electrons trapping/de-trapping behaviors during bake.