Non-polar and semi-polar ammonothermal GaN substrates
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm × 26 mm non- and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of 104 cm−3. Detailed studies of homoepitaxial layers, as well as AlGaN heterostructures are also presented, showing the potential of studied ammonothermal substrates in the fabrication of optoelectronic devices.