Electron-transition stimulated plasma chemical reactions on surfaces with nanostructures
A mechanism is proposed for dissipating the energy of the heterogeneous recombination of atoms from low-temperature plasma. The mechanism considers accommodation of the energy of the reaction through an electron channel. The results from simulations using the Monte Carlo method for gas-surface systems with metal nanodots are reported. It is demonstrated that in wide-gap solids with metal nanodots, the electron channel can determine the rate of the plasma-chemical reaction and the epitaxial growth of a semiconductor or a nanowhisker.