Electronic defect characterization in silicon
A brief outline is presented on recent developments in deep-level characterization and identification in semiconductors which have been made possible by the application of methods other than junction space charge measurements. Chalcogens and several transition metals in silicon are used as examples in order to show how important parameters and properties of defects can be revealed by using spectroscopic methods. One of the methods, namely photothermal ionization spectroscopy is discussed in more detail.