Complex model for plasma-enhanced heteroepitaxial deposition of A2B6 semiconductor compounds using MOC
A complex model for low-temperature PEMOCVD of A2B6 semiconductor layers is considered as follows: (i) metal-organic compound (MOC) molecules together with the carrier gas flux arrive at the reaction zone of a horizontal reactor where a gas discharge is maintained by means of an external inductor; (ii) molecular dissociation and convective diffusion of atoms of material to be deposited occur in the reaction zone; (iii) the atoms are captured directly at chemical absorption sites and included in the surface migration and nucleation processes. Thus, the modelling problem consists of three parts which are connected with quantitative descriptions of the discharge, the convective diffusion and the surface processes respectively. Each of these parts has been treated both analytically and numerically and the dependence has been obtained of layer properties on initial technological parameters such as total gas pressure, discharge power gas flux velocity and ratio of MOC partial pressures. The dependence is compared with experimental results.