High-pressure photoluminescence study of GaAs doped with various donor species
Reports on low-temperature (5 K), high-pressure photoluminescence of GaAs doped with S, Si and Sn. The behaviour of shallow donor levels is compared when possible. Particular attention is given to deep-level photoluminescence. A photoluminescence band deepens with a L-like pressure coefficient in Si-doped GaAs, but such a feature is not observed in the samples doped with the other donors investigated. On the other hand the pressure dependence of the room-temperature hole lifetime in Si-, Sn- and Te-doped GaAs is studied, showing that a hole recombination centre appears in the 1.5-2 GPa range.