Charge build-up and intrinsic bistability in an asymmetric resonant-tunnelling structure
Intrinsic bistability is observed in an asymmetric resonant-tunnelling structure based on n-GaAs/(AlGa)As, incorporating a thin emitter barrier and a thick collector barrier. The resonant charge build-up in the quantum well which gives rise to the bistability is monitored by the Landau level structure in the magneto-capacitance.