Rutherford backscattering studies on high-energy Si-implanted InP
High-energy Si-implantations into InP:Fe were examined using Rutherford backscattering (RBS) via channeling measurements. Variable-fluence implantations at 3 MeV and variable-energy implantations for a fluence of 3 x 1014 cm−2 were done. A damagestudy on the 3 MeV Si-implanted samples by RBS indicated formation of a continuous, buried amorphous layer for a fluence of ≈5 x 1014 cm−2. The quality of the crystal in the region of the amorphous layer was poor after annealing at any temperature (≤900° C), indicating that the crystallization during annealing resulted in either a highly defective material or a polycrystal. For samples with damage below the continuous amorphous level, damage recovery is essentially independent of damage concentration. In the variable-energy-implanted samples, the region of damage moved deeper below the sample surface with increasing energy.