Negatively charged donors in semiconductor quantum wells in the presence of longitudinal magnetic and electric fields
We present variational calculations of the binding energy for negatively charged donors in GaAs/Al0.3Ga0.7As quantum wells. We show that the electronic quantum well ground state and parabolic energy dispersions are enough to obtain accurate results compared with previous Monte Carlo calculations. The configuration interaction method is used with a physically meaningful basis set. We study the charged donor binding energy dependence on the quantum well width and donor position in the presence of external electric and magnetic fields.