Formation and ionic conductivity of Li2S–GeS2–Ga2S3 glasses and thin films
Abstract Li 2 S–GeS 2 –Ga 2 S 3 glasses and thin films were prepared and their conductivities were compared. Bulk glasses were melted in Si-coated silica tubes. The glass-forming region was observed at cation ratios of 0 or 40–70% Li and less than 50% Ga. Thin films with a wider composition range were formed by RF sputtering. Conductivities were almost identical in bulk glasses and films of similar composition and increased along with increasing Li 2 S content. Conductivity and glass transition temperature ( T g ) increased slightly with addition of a moderate amount of Ga 2 S 3 . These results are due to the mixed-former effect.