Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz
The potentials of 6H-SiC are explored for application as a high power IMPATT diode through computer simulation experiment. It is observed that the new material would far surpass its present rivals Si and GaAs in terms of power output at 140 GHz. However, excessive noise would put a severe restriction on the applicability of 6H-SiC for high-efficiency IMPATT structures.