High-temperature performance of state-of-the-art triple-gate transistors
High-temperature performance of state-of-the-art n-channel triple-gate transistors with 15 nm fin-width, 60 nm fin-height, undoped body, high-k gate dielectric and metal gate is reported. The degradation of the on-current, transconductance and subthreshold swing, the shift in threshold voltage, the increase in gate/drain leakages and off-current with the temperature are analyzed up to 200 °C. The comparison of short- and long-channel devices and the overall excellent performance at high temperature are outlined.