Temperature dependence of the inhomogeneous parameters of the Mo/4H-SiC Schottky barrier diodes
The inhomogeneous parameters of Mo/4H–SiC Schottky barrier diodes were determined from current–voltage (I–V) characteristics in the temperature range of 303–498 K by using a general approach for the real Schottky diode. In this approach the total series resistances is divided into two resistances; the first one (R P) is the sum of the series resistances (r) of the particular diodes connected in parallel and the second is the common resistance (R C) to all particular diodes. The mean barrier height and the standard deviation (σ) decrease linearly with decreasing temperature and they are between the values for the diodes with the two limiting cases; no current spreading and full current spreading. The series resistance R C increases, while the series resistance R P slightly decreases with decreasing temperature.