The principles of integrated single crystal circuit design
Abstract This article shows in some detail how some basic circuit functions may be produced in a single crystal block of silicon. The reasons for this development are set out and it is shown that the underlying aims of the work are consistent with only some of the techniques of the semiconductor art. Design data are given for the fabrication of resistors and capacity by several methods and the variation of the component values with temperature is discussed. It is shown how there are interlocking thermal and frequency limits to the value of resistance that may be produced in a diffused layer, apart from the limitation produced by the tolerance in the masking procedure used. The limitations and advantages of p-n junctions as capacitors are pointed out and new means of overcoming them suggested. Other procedures for obtaining capacity are mentioned in the light of the objectives of the single crystal circuit programme. Finally these and other passive elements must be synthesized with active elements, thus giving rise to new problems in design as a compromise between the demands of the various components is made.