AC hopping conductivity and DLTS studies on electron-irradiated boron-doped silicon
AC hopping conductivity and DLTS measurements have been performed on boron-doped electron-irradiated silicon at <or approximately=18 K. Isochronal anneals of the AC hopping conductivity revealed defect annealing stages correlating with the known behaviour of the vacancy and the boron-substitutional-vacancy pair. A reverse annealing stage between 240-260 K was tentatively attributed to a boron-vacancy-related complex. In one particular material, recovery stages between 40 and 60 K and between 220 and 300 K were attributed to electron emission from electron traps present in the as-grown material. Both of these disappeared with electron irradiation. DLTS carried out on specimens that had been warmed to room temperature after electron irradiation at approximately 18 K revealed a number of previously unreported defects.