Photoluminescence of nanostructured cubic-lattice silicon carbide films grown on a silicon wafer
The light-emitting properties of cubic-lattice silicon carbide SiC films grown on Si(100) and Si(111) substrates with VPE at low temperatures (Tgr ∼ 700°C) are discussed. Investigations of the grown films reveal a homogeneous nanocrystalline structure involving only the 3C-SiC phase. When the electron subsystem of the structure is excited by a He-Cd laser emitting at λexit = 325 nm, the photoluminescence (PL) spectra contain a rather strong emission band shifted by about 3 eV toward a short-wave spectral region. At low temperatures, the PL integral curve is split into a set of Lorentz components. The relation between these components and the peculiarities of the energy spectrum of electrons in the nanocrystalline grains of the silicon carbide layers is discussed.