Overshoot phenomena in PIN diode under EMP with fast rise time
To study the interference effect of the electromagnetic pulse (EMP) on the PIN diode, the one-dimensional numerical modeling is carried out, which solves the semiconductor equations based on the drift-diffusion model. By observing the variation of the distribution of current density and charge density in the PIN diode during the pulse, the occurrence of an overshoot current under a positive or negative voltage is analyzed. The results show that the overshoot current is due to the capacitive performance of PIN diode under high frequency. Whether the pulse voltage is positive or negative, the magnitude of the overshoot current is increasing with less rise time or higher initial positive bias voltage.