Electrodeposition of BixSb2−xTey Thermoelectric Films from DMSO Solution
The electrochemical behavior of nonaqueous dimethyl sulfoxide solutions of BiIII, TeIV, and SbIII was investigated using cyclic voltammetry. On this basis, BixSb2−xTey thermoelectric films were prepared by the potentiodynamic electrodeposition technique in nonaqueous dimethyl sulfoxide solution, and the composition, structure, morphology, and thermoelectric properties of the films were analyzed. BixSb2−xTey thermoelectric films prepared under different potential ranges all possessed a smooth morphology. After annealing treatment at 200°C under N2 protection for 4 h, all deposited films showed p-type semiconductor properties, and their resistances all decreased to 0.04 Ω to 0.05 Ω. The Bi0.49Sb1.53Te2.98 thermoelectric film, which most closely approaches the stoichiometry of Bi0.5Sb1.5Te3, possessed the highest Seebeck coefficient (85 μV/K) and can be obtained under potentials of −200 mV to −400 mV.