DBARC
187486594
Gan Guang Xing noXian Xiang Ke Neng botomuFan She Fang Zhi Mo (DBARC) Zui Jin noJie Guo
Mark Francis Dioses Alberto Kudo Takanori Lin Meng Zhang Lin V Judia Harriet Sumathy Chakrapani Srinivasan Parthasarathy Deepa Antonio Charito Ng Edward Lu Pinghung Neisser Mark Padmanaban Munirathna
121389482
Second generation radiation sensitive 193 nm developable bottom antireflective coatings (DBARC) recent results
We will discuss our recent results using a second generation radiation sensitive developable 193 Bottom Antireflective coatings (DBARCs) These DBARC materials are made solvent resistant the application of a resist coating on top of them through a crosslinking mechanism that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. Typically this is done by crosslinking a copolymer containing a hydroxyl moiety with a polyfunctional vinylether during post applied bake. This DBARC approach, after exposure, allows for development of the stack in exposed areas down to the substrate eschewing the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked. We will give an update on the performance our latest 193 nm DBARC materials used with different Implant 193 nm resists when using a phase shift mask with off axis illumination.
SPIE Advanced Lithography
Francis M Houlihan Alberto D Dioses L Zhang Joseph E Oberlander Alexandra Krawicz Sumathy Vasanthan Meng Li Yayi Wei Ping Hung Lu Mark O Neisser
122191717
Radiation sensitive developable bottom anti reflective coatings (DBARC) for 193nm lithography: first generation
A first generation DBARC applicable for 1st minimum 193nm lithography is described in this paper. The polymer used in this DBARC is insoluble in the casting solvent of the resist, which is propyleneglycolmonomethyletheracetate (PGMEA) Photo acid generator (PAG) and base extractions from the DBARC coating by the resist casting solvent were examined by the DBARC dissolution rates in the developer, before and after solvent treatments. Although the resist and the DBARC do not appear to intermix, strong interaction between the two is evident by their lithographic performance and dissolution rate study.
SPIE Advanced Lithography
Medhat A Toukhy Joseph E Oberlander Salem K Mullen Ping Hung Lu Mark O Neisser
136683248
Approaches for 193nm and 248nm First and Second Generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC)
We review approaches that we have developed at 193 and 248 nm for first and second generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC) and give an account of our most recent results for both types of DBARC's.
Francis M Houlihan Shinji Miyazaki Alberto D Dioses Lin Zhang Yuki Ubayashi Kazuyoshi Ohta Joseph E Oberlander Alexandra Krawicz Sumathy Vasanthan Meng Li Yayi Wei Ping Hung Lu Mark O Neisser
123090492
Second generation radiation sensitive developable bottom anti reflective coatings (DBARC) and implant resists approaches for 193 nm lithography
We will discuss our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARC's) for 193 nm. We will show imaging results (1:1 L/S features down to 140 nm) for some first generation implant resist material based upon a fluorinated resins and also show relative implant resistance of these first generation fluorinated resists towards As implantation (15 KeV at 5x1015 dose with 20 x 10 4 amp) Also, discussed will be a second generation of implant resists based on a non fluorinated resins. Surprisingly, we found that the nonfluorinated materials gave better implant resistance ~2 3 X1011 atoms/cm2) despite the higher atomic number of fluorine compared to hydrogen in the fluorinated implant materials ~2 5X1012 atoms/cm2) Finally, we will give an update on the lithographic performance of this second generation of implant resists.
SPIE Advanced Lithography
Francis M Houlihan Alberto D Dioses Medhat A Toukhy Andrew R Romano Joseph E Oberlander Hengpeng Wu Salem K Mullen Alexandra Krawicz Ping Hung Lu Mark O Neisser
210470744
193nmrisogurahuiYong noEr Ci Fa Sheng Fang She Gan Ying Xian Xiang Ke Neng Di Fan She Fang Zhi Mo (DBARC)toZhu Ru rezisutoShou Fa
H Glorieux Francis Dioses Alberto T Medhat Romano Andrew Oberlander Joseph WU HengPeng Mullen Salem Krawicz Alexandra Lu Pinghung Neisser Mark
215409396
Wafer scale nanofabrication of sub 100 nm arrays by deep UV displacement Talbot lithography.
In this manuscript, we demonstrate the potential of replacing the standard bottom anti reflective coating (BARC) by a PolyMethylGlutarImide (PMGI) layer for wafer scale nanofabrication by means of deep UV Displacement Talbot Lithography (DTL) PMGI is functioning as a developable non UV sensitive bottom anti reflective coating (DBARC) After introducing the fabrication process using a standard BARC based coating and the novel PMGI based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI based coating instead of the BARC based one. The possibilities opened by the PMGI based coating are illustrated by the successful fabrication of an array of nanoholes with sub 100 nm diameter for GaAs nanowire growth on a 2" GaAs wafer, a 2" nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift off on a 4" silica wafer. Therefore, DTL possess the potential for wafer scale manufacturing of nano engineered materials.
Nanotechnology
Victor Jesus Gomez Hernandez Mariusz Graczyk Reza Jafari Jam Sebastian Lehmann I A Maximov
225287812
On farm verification of soil test based phosphorus fertilizer recommendations for bread wheat (Triticum aestivum L. on the vertisols of central highlands of Ethiopia
Abstract Phosphorus is the most limiting nutrient in most of soils of highlands of Ethiopia. Mathematical models that integrate the soil test indices with fertilizer requirements can be important for phosphorus fertilizer recommendation. This study was conducted to verify the recommended soil test based calibration equation for phosphorus (P) fertilizer for two consecutive years on 16 farmers' fields. Before planting, the initial soil P level was analyzed and ranged from 5.8 to 11.4 ppm. Based on the P calibration model of Debre Berhan Agricultural Research Center (DBARC) the phosphorus requirement ranged from 17 to 120 P2O5 kg ha 1. Nevertheless, in the second year, the initial P level was between 5.04 and 14.29 ppm and the need for P2O5 ranged from zero to 110.4 kg P2O5 ha 1 with DBARC model. In contrast, with agronomic phosphorus fertilizer recommendation, the need for P2O5 was 138 kg ha 1 for both locations for the two years. The first year result revealed that soil test based fertilizer application save 51% of the P2O5 applied compared to the agronomic fertilizer recommendation (138 P2O5 kg ha 1) However, in the second year DBARC and GARC model, could reduce P2O5 fertilizer applied by 65.94 and 44.2% respectively. The first year result indicated that DBARC model had a mean grain and straw yield penalty of 0.8% and 0.7% compared to the agronomic phosphorus fertilizer recommendation. Similarly, in second year the penalty could be found to be 10.3% and 7.8% The result also indicated that DBARC P calibration model had the higher net benefit of 19,088 ETB ha 1. The same was true for benefit cost ratio. Therefore, from this study, it is recommended that soil test based fertilizer recommendation shall be used for farmers and hence the P critical and P factor for the test crop were found to be 12.56 and 6.41, respectively.
Beza Woldearegay Shewangizaw Kenzemed Kassie Shawl Assefa Tesfaye Feyisa
121630765
Full chip correction of implant layer accounting for underlying topography
Photolithography for the formerly "non critical" implant blocking layers is becoming more challenging as edge placement control budgets for junction definition shrink with each node. In addition to the traditional proximity effects associated with the implant layer mask, the underlying active and gate layers can interact through a variety of mechanisms to influence the edge placement of the developed implant layer. These mechanisms include bulk reflectivity differences, resist thickness thin film interference effects, reflective notching from pattern sidewalls, reflections from curved surfaces, focus differences, and more. While the use of organic developable bottom antireflection coating (dBARC) can be effective in minimizing these influences, it does represent an added complexity and cost, and processes are still relatively immature. Without such a dBARC, the CD variation due to underlying layers can easily exceed 50 nm, or more than 25% of the target dimension. We propose here a framework for modeling and correcting for these underlayer effects. The approach is based upon calibration of an optical model representing only implant mask proximity effects and two additional optical models which represent the effects of the underlayer topography. Such an approach can be effective in delivering much improved CD control for complex layouts, and represents only a small impact to full chip correction runtime.
Advanced Lithography
Min Geon Oh H J Youn No-Young Chung Jae Yeol Maeng Suk-joo Lee Ja-Hum Ku Aasutosh Dave John L Sturtevant Uwe Hollerbach Thuy Do Yuri Granik Kostas Adam Juhwan Kim Cynthia Zhu Sunwook Jung
108585865
Under layer effects for block levels: are they under control?
Challenges in block levels due to the dilemma of cost control and under layer effects have been addressed in several papers already, and different approaches to solve the issue have been addressed. Among the known approaches, developable BARC and under layer aware modeling are the most promising. However, in this paper we will discuss and explain the limitation inefficiency of both methods. In addition, as more block levels are employing etching step, the under layer dependent etch behavior that we see in some of the block levels is also discussed. All these place great challenges for block level process development. We discuss here possible solutions/improvements including: developable BARC (dBARC) thickness optimization for specific under layers; Simplified model based corrections for lith and etch. This work was performed at the IBM Microelectronics Div, Semiconductor Research and Development Center, Hopewell Junction, NY 12533
Photomask Technology
Dongbing Shao Bidan Zhang Shayak Banerjee H Kry Anuja de Silva Ranee Kwong Kisup Chung Yea-Sen Lin Alan J Leslie