P-120: High Efficiency Method of Selective CNT Arrays Growth on the Metal/Dielectric/Semiconductor Substrates for FEDs Application
Multi-wall carbon nanotube (CNT) arrays growth by the atmospheric pressure CVD process of thermal decomposition of fluid (o- and p-xylole C8H10) hydrocarbons in the presence of volatile catalysts (ferrocene Fe(C5H5)2) with the use of Ar as a gas-carrier on the top of different metal/dielectric/semiconductor (MDS) structures, in particular Si/SiO2, Ti/SiO2/Si, Al2O3 matrix/Ni catalyst has been investigated for the FEDs application. The obtained results are showing that the CNTs growth selectivity and density of CNTs packing can be managed under certain conditions. At the investigated types of surfaces the vertically aligned close-packed and preferably oriented low density CNT arrays have been obtained as well as single CNTs in the pores of nanoporous Al2O3 matrix with Ni catalyst.