Electromigration characteristics for Al-Ge-Cu
K. Kikuta and T. KikkawaULSI Device Development Laboratories, NEC Corporation.1 120, Shimokuzawa, Sagamihara City, Kanagawa 229, JapanABSTRACTAluminum-Germanium-Copper (Al-Ge-Cu) alloy is a promising material for interconnectionsto fill contact holes and vias using low temperature reflow sputtering due to its lower melting pointthan conventional Al alloys. The reflow temperature for contact- and via-filling decreases as theGe concentration in Al increases. The suitable Ge concentration for reflow sputtering at around 400