Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
Helium ion channeling has been used in a detailed study of 3C-SiC films on a Si/SiO2/Si (SIMOX) substrate. The strain-induced angular shift was determined to be 0.16?? 0.05?, indicating a kink between the SiC and Si layers along the axis. Single crystals of 6H-SiC have been irradiated with a variety of ions over a range of fluences. The relative disorder on Si sublattice shows a sigmoidal dependence on dose for all ions. In isochronal and isothermal annealing studies, two distinct recovery stages are identified with activation energies of 0.25? 0.1 eV and 1.5? 0.3 eV, respectively. Deuterium ion channeling is also applied to simultaneously study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated at 100 and 300 K.