Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation
We report on parametric studies of CNx films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure. The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp2 and sp3 bonding states. At relatively high pressure and laser fluences about 40 percent of the C atoms and about 50 percent of the N atoms are bounded in the C-N single bonds, generally attributed to the (beta) -C3N4 compound.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.