The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films
In this work it was informed about development of the thermoelectric radiation detector based on the multielement structures made of the polycrystalline higher manganese silicide films. The films were grown on a p-type silicon substrate with n-type silicon epitaxial layer with a thickness of about 30 /spl mu/m. For the purpose of decreasing short-circulating effects and thermal scattering of the substrate, the elements of the structures were separated by making grooves using mechanical cutting. Depth of the grooves is no more than 50 /spl mu/m. Electrical contacts to elements of the structure were made by ultrasonic bonding. Thermoelectric properties (conductivity, thermoelectric power, sensitivity and response time) of the multielement structures were investigated.