Effect of Sintering Temperature on Microstructural and Raman Spectroscopic Analysis of Solid State Sintered Sb2O3 doped ZnO
Abstract ZnO doped with 2 wt% of Sb 2 O 3 is prepared by conventional solid state reaction method. The prepared samples were sintered at 800, 900, 950 and 1000 o C temperatures. X-ray diffraction peaks for ZnO doped with Sb 2 O 3 shows a small shift (∼0.12°) towards lower 2θ angle as compared with pure ZnO. Scanning Electron Microscope (SEM) with EDS is carried out to study the surface morphology as well as to find the elemental composition of the prepared samples. The modes at 334.4 cm -1 and 438.4 cm -1 in the Raman spectrum are assigned as E 2 (high)–E 2 (low), and E 2 (high) modes of ZnO base, respectively. When doping ion occupies the Zn sites, lattice or intrinsic host-lattice defects are activated, leading to additional vibration mode at 716.8 cm -1