Fabrication and electrical characterization of the InSbS3/n-Si heterojunction
Abstract In this article, polycrystalline InSbS 3 thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS 3 /n-Si heterojunction. The structural characterization of the InSbS 3 thin films was measured by FE-SEM and XRD techniques. The InSbS 3 thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS 3 /n-Si heterojunction like the barrier height ( ϕ b ), series resistance ( R s ) and the ideality factor ( n ) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS 3 /n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS 3 /n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82%