Ta₂O5 / Al / SiO₂ / P-Si MIS型 太陽電池의 製作과 特性
The fabrication procedure and characteristics of Ta₂O_5/Al/SiO₂/p-Si MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about 450℃ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after 750 Å thickness of tantalium silica film spin on anti-reflective coating. The best results showed that Voc = 0.545 V, Jsc = 34㎃ and F.F = 0.65, which represent that the conversion efficiency is 12%.