Epitaxial growth and characterization of organic thin films on silicon
Abstract The epitaxial growth of thin organic films (perylenetetracar☐ylic dianhydride and perylene) on an inorganic semiconductor surface (Si(111)) was studied by near-edge X-ray absorption fine structure and angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation. By comparison with results obtained from a perylene single crystal, information about orientation and order of the molecular film and about the adsorbate-substrate interaction could be derived.