Schottky barrier characterization of lead phthalocyanine/aluminium interfaces
Abstract Thin sandwich film structure consisting of several cells is fabricated by successive thermal sublimation of aluminium, lead phthalocyanine and aluminium under high vacuum conditions (10 − 4  Pa). The dark current density–voltage ( J – V ) characteristics indicate rectifying junctions exists at PbPc/Al interface. Devices exposed to oxygen were found to exhibit an enhanced Schottky type behaviour. Measurements on the dependence of capacitance and conductance on frequency and temperature are also investigated. These are quantitatively interpreted using an equivalent circuit model. Structural properties of lead phthalocyanine film were studied using X-ray diffraction techniques.