Observations on temperature dependence of photoconductivity in hydrogenated amorphous silicon
It is well known that the photoconductive sensitivity is often used to roughly characterize the quality of amorphous semiconductors, because it involves not only the optical processes of carrier excitation, trapping and recombination but also the various transport mechanisms of excited carriers. The results published by many groups show that a wide range of properties can be observed in samples produced under a variety of deposition conditions.