Some physical investigations of AgInS2−xSex thin film compounds obtained from AgInS2 annealed in seleneide atmosphere
Abstract This work deals with the preparation of AgInS 2− x Se x from AgInS 2 (AIS) sprayed thin films which treated under seleneide atmosphere during 1 h at various temperatures (400, 450 and 500 °C). Previously elaborated AgInS 2 compound, which has been conceived as an absorber layer in the SnO 2 :F/AgInS 2 (p)/Al Schottky diode, has presented some generation–recombination deficiencies and tunneling effects. XRD analysis shows the incorporation of Se element in the AgInS 2 matrix especially for use of 450 °C as heat temperature. The optical band gap calculated from transmittance and reflectance spectra of the above samples show the effect of annealed temperature on the band gap energy. The refractive index and extinction coefficient of the differently sample of AgInS 2− x Se x thin films have been reached through their transmission and reflectance spectra on a wide range of wavelengths. The surface topography and the roughness parameters of AgInS 2− x Se x thin films had been studied by AFM. Finally, thermal conductivity was determinate by the mirage effect. This thermal property was decreased by the annealed temperatures.