Amorphous SiOx nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films
Abstract Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 °C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 °C RTP treatments. Large-scale amorphous SiO x nanowires with diameters of 30–50 nm and length up to 10 μm were synthesized after RTP treatment at 1200 °C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.