Raman scattering of nitrogen incorporated diamond thin films grown by hot filament chemical vapor deposition
Abstract A detailed Raman scattering analysis of nitrogen incorporated polycrystalline diamond thin films grown using NH 3 /CH 4 /H 2 gas mixture in hot filament chemical vapor deposition system is presented. To understand the nitrogen bonding configuration in these films, diamond films are grown by replacing H 2 with D 2 in the gas mixture. The Raman peak observed at ~1190 cm −1 showed an isotopic shift to ~830 cm −1 upon replacing H 2 with D 2 in the gas mixture. With the present Raman analysis, the peak at ~1190 cm −1 is assigned to C N H. Secondary ion mass spectroscopy revealed the abundance of nitrogen in the sub-surface region of the annealed diamond thin films.