Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof
The invention provides a polycrystalline silicon/monocrystalline silicon heterojunction structure applied to a solar cell and a preparation method thereof. The structure of the polycrystalline silicon/monocrystalline silicon heterojunction structure applied to the solar cell is that a polycrystalline silicon film with an opposite doping type on a monocrystalline silicon wafer acts as an emitting electrode. The structure and the distribution of the thickness and the doping concentration of the polycrystalline silicon film are both adjustable. The preparation method of the polycrystalline silicon/monocrystalline silicon heterojunction structure applied to the solar cell comprises the steps that a doped amorphous or microcrystalline silicon film is deposited first by adopting a low-temperature vapor deposition method, and then rapid thermal processing and crystallization are carried out. According to the preparation method provided by the invention, a more flexible crystalline silicon solar cell pn-junction structure can be acquired, thereby providing space for further improving the structure and the process of crystalline silicon solar cell devices and improving the conversion efficiency thereof.