Surface modification process for low-dielectric material
The invention discloses a surface modification process for a low-dielectric material. According to the surface modification process, a silicon dioxide wet gel thin film obtained by using a spin coating method is soaked in a modification solution for surface modification, and then is subjected to thermal treatment in an atmospheric environment, so that the silicon dioxide thin film material with a low dielectric constant is prepared. A method for reducing the dielectric coefficient of the material through using two simple and convenient techniques of soaking with a solvent and performing the thermal treatment is used in the process, so that the porosity of the material still maintains at a relatively low level, and the mechanical strength can keep a relatively high level.