Optimal deposition and layer modulation parameters for mechanical property enhancement of TiB2/Si3N4 multilayers using orthogonal experiment
Abstract TiB 2 /Si 3 N 4 multilayers have been synthesized by ion beam assisted deposition (IBAD). SEM, XRD, XP-2 profiler, and Nano indenter were employed to investigate the effect of modulation ratio, modulation period, thickness of buffer layer, and deposition temperature on the microstructure and mechanical properties. Orthogonal experiment found that the TiB 2 /Si 3 N 4 multilayer with modulation ratio of 15.4:1 and modulation period of 11.8 nm prepared with 38 nm-thick Ti buffer layer at deposition temperature of 225°C displayed optimal mechanical properties. Its hardness and elastic modulus were up to the highest values of 36.2 GPa and 448 GPa. This hardest multilayer also showed the improved residual stress and fracture resistance.