Interfacial Reaction in Poly Si1 − x Ge x / ZrO2 with Ge Content in Poly Si1 − x Ge x Films
The interfacial reaction between poly Si 1 - x Ge x (x = 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1 - x Ge x (x = 0.2. 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si 0 . 6 Ge 0 . 4 /ZrO 2 system.