The method for growing a polycrystalline silicon film for charge trapping on the controllable silicon substrate film stress
To provide a semiconductor-on-insulator multilayer structure. Multilayer comprises a single crystal semiconductor support substrate of a high resistivity, an oxide having irregularities, nitride or oxynitride layer, a polycrystalline silicon layer, a dielectric layer and the single crystal semiconductor device layer. Multilayer structure, prepared by a method of reducing Uehabau.