Interfacial reactions in Ti/SiC layered films with and without thin diffusion barriers
Abstract Four materials—Al 2 O 3 , TiB x , VB x , and TaB x ( x 2 O 3 and TiB x -show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820°C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and 1000°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is Ti 5 Si 3 , regardless of barrier.