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Vishay Intertechnology VCNL4000 Proximity and Ambient Light Optical Sensor and SiR880DP ThunderFET® 80 V Power MOSFET Honored With EN-Genius Product of the Year Awards
MALVERN, PENNSYLVANIA — March 28, 2011 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its VCNL4000 proximity and ambient light optical sensor and SiR880DP ThunderFET® 80 V power MOSFET have won Product of the Year awards from EN-Genius Network ( http://www.en-genius.net ), a leading information source for electronic design engineers.
Recipients of the EN-Genius 2010 Product of the Year Awards were selected by Paul McGoldrick, EN-Genius editor in chief, and his editorial colleagues Lee Goldberg and Alex Mendelsohn, from products reviewed by the publication throughout the year.
Winner of the EN-Genius award for Best Development in Light Sensing, Vishay’s VCNL4000 fully integrated proximity and ambient light optical sensor is the industry’s first to combine an IR emitter, photo-pin-diode, ambient light detector, signal processing IC, and a 16 bit ADC in one small 3.95 mm x 3.95 mm x 0.75 mm leadless (LLP), surface-mount package. The space-saving VCNL4000 supports an easy-to-use I2C bus communication interface and greatly simplifies designs in a wide variety of consumer and industrial applications.
“Vishay has taken its superb experience of light detection into this part in a way that makes it ideal − from both performance and sizing − for mobile device proximity sensing and display/keyboard contrast control and dimming applications. It is extremely well priced and will do exceptionally well,” EN-Genius said.
Recognized with the EN-Genius award for Best High-Voltage Power MOSFET, Vishay’s ThunderFET SiR880DP is built on a new low-on-resistance technology optimized for higher-voltage MOSFETs. The device is the first 80 V power MOSFET with an on-resistance rating at a 4.5 V gate drive. Packaged in the thermally enhanced PowerPAK® SO-8, the SiR880DP offers ultra-low on-resistances of 8.5 mΩ at 4.5 V, 6.7 mΩ at 7.5 V, and 5.9 mΩ at 10 V. Typical on-resistance times gate charge, a key figure of merit (FOM, expressed in nC-mΩ) for MOSFETs in dc-to-dc converter applications, is 161 at 4.5 V.
“The striking thing about the n-channel SiR880DP is the combination of its high voltage rating together with its 4.5 V gate drive rating, while offering superbly low on-resistances. The 4.5 V rating of the SiR880DP will allow for higher frequency converter designs using 5 V PWM ICs, a departure from the 6 V presently experienced. Pricing is very attractive and will allow for early design wins in dc-to-dc converters,” said EN-Genius.
Samples and production quantities of the VCNL4000 and SiR880DP are available now, with lead times of 10 and 16 weeks, respectively, for large orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.