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NIST Measurement Science and Engineering Research Grants
NOVEL ELECTRICAL AND PHYSICAL CHARACTERIZATION OF THE SiC-SiO2 INTERFACE
RECIPIENT: General Electric, GE Global Research, Niskayuna, NY
GE Global Research and The Pennsylvania State University will develop novel measurement techniques to study the SiC-SiO2 interface in silicon carbide power MOSFET devices. The team will develop measurement techniques based on pulsed gate Hall effect, electron spin resonance based, and synchrotron-based X-ray photoemission spectroscopy to characterize the electrical resistance of the SiC-SiO2 interface. Reducing the interfacial resistance is a critical technical requirement for enabling SiC MOSFET devices to provide a quantum leap in efficiency, operating frequency, and operating temperature for processing electrical energy. These improvements will enable a key component to efficiently process energy from diverse variable sources such as wind- and solar-powered devices and rapidly route it to customers.
Public contact (for project information):
Todd Alhart, 518-387-7914
Project Partners: The Pennsylvania State University
NIST Program Office Contact:
Jason Boehm, 301-975-8678