Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Infiltration of trimethylaluminum (TMA) in molecular layer deposition-enabled alucone thin films on planar substrates is a common observation reported in the literature. An insufficient TMA purge time in such cases is often found to lead to a CVD component in the overall film growth due to the reactions between the outgassing TMA and the co-reactant. In this work, the effect of the CVD component on the step coverage of alucone films when grown in high-aspect ratio trenches is studied. The thickness was initially found to increase with increasing distance from the trench aperture before starting to decrease up to the film’s maximum penetration depth. With the support of modeling, the reason behind the observed thickness profile was investigated and attributed to the combination of an increasing outgassing rate of TMA and a decreasing ethylene glycol (EG) concentration along the trench depth. Furthermore, the maximum thickness and the position where it is obtained in the trench are found to depend on TMA and EG doses, TMA purge time, the trench height, and the trench depth. Finally, the possibility of adopting the additional CVD component in film growth for void-less gap fill of 3D trenches is discussed, as well as the suppression of the same CVD component, without compromising the growth rate, by using dimethylaluminum isopropoxide as a substitute for TMA is evaluated.