Research Progresses on Suppressing the Short-Channel Effects of Field-Effect Transistor

 Recently, with the continuous miniaturization and integration of microelectronic devices in all fields, the conventional MOSFET structure has suffered from severe short channel effects with continuous downsizing. In order to further improve the electrical properties of Very Large-Scale Integration Circuit (VLSI) and obtain the larger device integration density in circuits, new revolution in MOSFET technology is needed, which involves the innovations of new materials, new technologies, and new device structures. This paper explores device structure innovations in traditional planar transistors, such as the device performance enhancement via the high-κ/metal gate and especially the three-dimensional device structure—FinFET, as well as the subsequent development of gate-all-around FET proved to outperform FinFET. The development of high-performance devices based on new materials has become an imperative direction to break through the current bottleneck of silicon-based technologies. This paper focuses on an overview of transition-mental dichalcogenides and ferroelectric materials, including frontier research and current inadequacies. Based on these new approaches, VLSI manufacturing technology has seen many breakthroughs in recent years, which will successfully extend Moore's Law and further promote the development of emerging technologies in multiple fields.