SIMULATION OF DIFFUSION-DRIFF PROCESSES IN THE ELECTRON-HOLE PLASMA OF THE P-I-N-DIODES ACTIVE REGION UNDER THE CONDITIONS OF A MW PENETRATING IN THE PLASMA BY THE PERTURBATION THEORY METHODS

Background. The problem of developing tools for mathematical modeling of the state of electron-hole plasma in the p-i-n structures active region under the influence of an additional factor - a powerful microwave electromagnetic field is considered. The task is important for specialists in the field of microwave electronics, since p-i-n structures are used, in particular, for switching powerful electromagnetic fields and as protective devices for the input paths of radio engineering systems. 
Objective. It consists in developing a methodology for modeling the electron-hole plasma concentration distribution in the p-i-n- diodes active region taking into account the effect on the dynamics of charge carriers of microwave radiation penetrating into the active region and developing asymptotic methods for solving the corresponding singularly perturbed nonlinear problems. 
Methods. Achieving the goal is ensured by the use of boundary layer method, complex amplitudes method and classical analytic-numerical methods for solving boundary value problems for systems of ordinary differential equations. 
Results. A generalized mathematical model of the electron-hole plasma stationary state in the p-i-n diodes active region in the hydrodynamic approximation, which takes into account the effect of microwave radiation on processes in the plasma, is proposed. The model basis is a nonlinear singularly perturbed boundary value problem for the system of electron-hole currents continuity equations and the Poisson. The model boundary value problem is reduced to a recurrent sequence of linear boundary value problems. Solutions of the stated problem are found in the form of asymptotic series containing stationary and non-stationary components. A feature of the proposed mathematical model is that it reflects the effect of detecting an electromagnetic microwave TE-like wave on the charge carrier concentration distribution inhomogeneity in the p-i-n-diode active region. 
Conclusions. The methodology for modeling the electron-hole plasma stationary state in the p-i-n-diodes active region taking into account the effect on the charge carriers dynamics of microwave radiation penetrating into the active region has been developed. 
 