Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process

This letter focuses on the accurate simulation of the turn-<sc>off</sc> current for high-voltage and high-power IGBT devices and proposes a modeling method of transient analysis model (TAM) for IGBT devices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of <italic>di</italic>/<italic>dt</italic> during the turn-<sc>off</sc> process is corrected. Compared with the existing dual modeling methods, the accuracy of the nondual modeling method for <italic>di</italic>/<italic>dt</italic> during the turn-<sc>off</sc> process has been greatly improved.