Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2

Hybrid organic–inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide (MAPbI3) ultrathin films via co-deposition of PbI2 and CH3NH3I (MAI) on chemical-vapor-deposition-grown monolayer MoS2 as well as the corresponding photoluminescence (PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS2 tuned growth of MAPbI3 in a Stranski–Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI3/MoS2 heterostructures have a type-II energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI3 (at the initial stage) and on MAPbI3 crystals in averaged size of 500 nm (at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI3/transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.