Directional Single-Mode Emission From InGaAs/GaAs Quantum-Dot Half-Disk Microlasers

We report on the fabrication and studies of Ø100 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> half-disk lasers with an active region based on InGaAs/GaAs quantum dots providing very high modal gain. Such resonators support whispering gallery modes propagating at the cavity periphery. The microlasers show directional light outcoupling: continuous-wave output power emitted from the flat side reaches 17 mW, which is about 7 times greater than the power emitted from the back semicircular side. Single-mode lasing in a wide range of the injection currents is observed. P-side down bonding of the devices onto Si-board allowed increasing the maximum optical power to more than 30 mW and the lasing was observed up to <inline-formula> <tex-math notation="LaTeX">$93^{\circ }\text{C}$ </tex-math></inline-formula>. The 3 dB modulation bandwidth of 4.6 GHz was measured likely being limited by RC-parasites.