Mixed mismatch model in predicting the interfacial thermal conductance of metal/semiconductor interface

The acoustic mismatch model and diffuse mismatch model are widely used in the calculation of interfacial thermal conductance. These two models are respectively based on the assumption of extremely smooth and rough interfaces. Due to the great difference between the actual interface structure and the two hypotheses, the prediction of these two models deviate greatly from the actual interfacial thermal conductance. The recently proposed mixed mismatch model considers the effect of interface structure on the ratio of phonon specular transmission to diffuse scattering transmission, and the prediction accuracy is improved. However, this model requires molecular dynamics simulation to obtain phonon information at the interface. In this paper, the mixed mismatch model is simplified by introducing the measured roughness value, and the influence of interface structure on the contact area is taken into account to achieve a simple, fast and accurate prediction of interface thermal conductance. Based on this model, the interfacial thermal conductance of metals (aluminum, copper, gold) and semiconductors (silicon, silicon carbide, gallium arsenide, gallium nitride) are calculated and predicted. The results of Al/Si interface are in good agreement with the experimental results. This model is not only helpful to understand the mechanism of interface heat conduction, but also helpful to compare with the measurement results.