III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm

We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.