Method for simulating hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink


 The spin-transfer-torque (STT) magnetic tunneling junction (MTJ) device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing. Therefore, building a hybrid STT-MTJ/CMOS (Complementary Metal Oxide Semiconductor) circuits simulation framework can be of great value for the design of new kind of computing paradigms based on the spintronic devices. In this work, we developed a hybrid STT-MTJ/CMOS circuits simulation framework based on MATLAB/Simulink, which is mainly composed of a physics-based STT-MTJ model, a controlled resistor, and a current sensor. In the proposed framework, the STT-MTJ model, based on the Landau-Lifshitz-Gilbert-Slonczewsk (LLGS) equation, is implemented using the MATLAB script. The proposed simulation framework is modularized design, with the advantage of simple to use and easy to expand. To prove the effectiveness of the proposed framework, the STT-MTJ model is benchmarked with experimental results. Furthermore, the pre-charge sense amplifier (PCSA) circuit consisting of two STT-MTJ devices are validated and the electrical coupling of two spin-torque oscillators is simulated. The results proved the effectiveness of our simulation framework.