The Initial Test of a Micro-Joules Trigger, Picosecond Response, Vertical GaN PCSS

To meet the miniaturization of all-solid-state high-power microwave drive technology based on photoconductive semiconductor switches (PCSSs), a vertical gallium nitride (GaN) PCSS that is triggered by a micro-joules energy and picoseconds pulse width laser is presented. The device has showed low triggering optical energy and fast response. When the bias-voltage is 3 kV and optical energy is 33 <inline-formula> <tex-math notation="LaTeX">$\mu \text{J}$ </tex-math></inline-formula>, the photocurrent, on-state resistance, rise-fall time and quantum efficiency of the PCSS are 4.28 A, <inline-formula> <tex-math notation="LaTeX">$650.5~\Omega $ </tex-math></inline-formula>, 412/370 ps and 0.28%, respectively. It is anticipated that GaN-based PCSS will have a practical application in future radio frequency (RF) microwave systems for military purposes.