Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC)

Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or device type were irradiated with a pulsed laser. The units were irradiated by using a continual read/write correct loop in several bit patterns. Results for both correctable and uncorrectable errors are presented along with soft error data records.