An Active Gate Driver of SiC MOSFET Module Based on PCB Rogowski Coil for Optimizing Tradeoff Between Overshoot and Switching Loss

The superior characteristics of the silicon carbide metal-oxide-semiconductor field-effect transistor (SiC mosfet) allow its wide use for improving the efficiency and power density of power electronic systems. However, the higher switching speed exacerbates the problems of overshoot, oscillation, and electromagnetic interference (EMI), which need to be properly addressed. In this article, a novel stage-detection closed-loop active gate driver (AGD) based on the printed-circuit-board (PCB) Rogowski Coil is proposed for optimizing the switching performance of SiC mosfets. And its stage identification threshold design can weaken the influence of the varying nonlinear parameters, especially for the turn-on process. First, the gate driver trajectory and the switching process of the SiC mosfet are analyzed. The optimal driver parameter dynamic configuration among the existing stage-control schemes is defined and unified, which aims to optimize the tradeoff between the overshoot and switching loss. Then, the parameter design of the PCB Rogowski Coil is illustrated. And the operation principle and working process of the proposed AGD are introduced. Finally, the performance of the proposed AGD and the effectiveness of the stage-control schemes are verified in the double-pulse test under different conditions. The experimental results show that the proposed AGD can not only reduce the overshoot and suppress the oscillation but also optimize the compromise of the switching loss and switching time.