NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs

The low-frequency (LF) noise characterization of Si0.7Ge0.3 pFinFETs and transistors’ performance were analyzed for different NH3 post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluctuations at low and intermediate drain currents. At high gate overdrive, the voltage noise <inline-formula> <tex-math notation="LaTeX">${S}_{\text {vg}}$ </tex-math></inline-formula> increases dramatically and the effect of the access resistance cannot be ignored. By analyzing the input-referred voltage noise power spectral density(PSD) at flat band voltage (<inline-formula> <tex-math notation="LaTeX">${S}_{\text {vgfb}}$ </tex-math></inline-formula>), we will demonstrate that nitridation of the high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> layer at 650 °C yields the best quality gate-stack and also results in the highest mobility. While NH3 PDA temperature above 650 °C may introduce more hydrogen at the oxide layer and at the interface, hydrogen can induce hole traps and interface traps that degrade the quality of the gate-stack and reduce the mobility.