High thermal-performance hybrid GaInAsP/SOI ridge-waveguide lasers with enhanced heat dissipation structure


 Hybrid GaInAsP/SOI ridge-waveguide Fabry-Pérot lasers with reduced thermal resistance were fabricated and measured. The lasers were formed by room-temperature surface-activated bonding of InP and SOI wafers. Thin SiO2 film was introduced as ridge-sidewall insulation to increase heat flow to p-electrode side-metal. By incorporating a thermal shunt structure and Au electroplating, a single-facet output power of 20 mW and lasing operation up to 110 °C were achieved for 2.0 mm cavity length under continuous-wave conditions. The proposed structure showed record low thermal resistance of 14.3 K/W and threshold current density of approximately 0.7 kA/cm2.