High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere


 Next-generation power devices using wide bandgap semiconductors, such as SiC, are expected to operate at higher temperatures than conventional Si power devices, and their operating temperatures are expected to exceed 250 °C. We developed a novel high-temperature resistant interconnection technology for die-bonding of SiC power devices using Ni nanoparticles and Al microparticles composite paste. The bond strength of the Al-metallized Si chip to Ni- metallized direct bonded copper substrate was evaluated using shear tests. The initial shear strength of samples from pressureless sintering at 350 °C for 15 min in the air exceeded 30 MPa. Furthermore, no significant degradation was observed in a high-temperature storage test at 250 °C for 1000 h.