Investigation of Heavy Ion Irradiation Effects on Charge Trapping Memory Capacitor by C-V Measurement


 Heavy ion irradiation effects on charge trapping memory (CTM) capacitors with TiN/Al2O3/HfO2/Al2O3/HfO2/SiO2/p-Si structure have been investigated. The ion induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage (C-V) characteristics. The C-V curves shifted towards negative direction after swift heavy ion irradiation, which is due to the net positive charges accumulate in trapping layer. Memory window decreases with the increase of ion fluences in high voltage, which results from the heavy ion induced structure damage in blocking layer. The mechanism of the heavy ion irradiation effects on CTM capacitors was discussed in detail with energy band diagrams. The result may help to better understand the physical mechanism of the heavy ion induced degradation of CTM capacitors.