Finite Element Analysis of Generalized Thermoelastic Interaction for Semiconductor Materials under Varying Thermal Conductivity

In this work, we consider the problem of a semiconductor half-space formed of varying thermal conductivity materials with and without Kirchhoff’s transforms. Specifically, we deal with one thermal relaxation time within the context of generalized photothermoelastic theory. It is expected that the thermal conductivity of the material will vary with temperature. The finite element method is used to numerically solve this problem. The Laplace transform and the eigenvalues method are used to determine analytical solutions to the linear problem. Various hypotheses are investigated, both with and without the use of Kirchhoff’s transformations, to consider the influence of thermal conductivity change. To verify the accuracy of the proposed approach, we provide a comparison of numerical and analytical results by ignoring the new parameters and investigating the behaviors of physical quantities for numerical outcomes.