Improved Design for the High Gain Wideband Matrix Amplifiers Using Differential Cells and Microwave CMOS Technology

centerline to absorb the peaking impact at a cut-off frequency and reduce gain ripples. As an application of the ideas and concepts of matrix amplifiers, a modified step-by-step design of rows 4 and column 2 matrix amplifier is undertaken using a Quasi Differential amplifier. A Matrix differential amplifier using a shifted-second-tier structure technique is then built and tested in 0.18 µm Complementary Metal Oxide Semiconductors technology. The advantages gained from the proposed design are high gain, high bandwidth, low noise, and no need for balun circuits. The design and simulation results were achieved using ADS. The significant results show a high gain of 40 dB and a 33 GHz bandwidth. The noise figure is also 3.583, with S11, S22, and S12 being -10 dB, -10dB, and -40dB, respectively; the output power at 1-dB gain compression point is evaluated (P1dB) of +6.4 dBm, and the total DC power dissipation is 266mW. The cadence tools produced the layout design and specifications, although the chip size was 1.1mm 2 .