Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

In this study, the effects of AlN/GaN superlattice (SL) thickness on performances of AlGaN/GaN high electron mobility transistor (HEMT) heterostructure grown by metal-organic chemical vapor deposition on silicon is investigated. Stress in GaN is controlled by varying the total thickness of the AlN/GaN SL. Improved crystal quality and surface roughness accomplished with 2200 nm-thick AlN/GaN SL, leads to an increase in high electron mobility (1760 cm2 (V s)−1) as well as two-dimensional electron gas concentration (1.04 × 1013 cm−2). AlGaN/GaN metal–insulator-semiconductor HEMT (MIS-HEMT) fabricated on the heterostructure with SL buffer layer exhibits a significant improvement in maximum saturation current of 1100 ± 29 mA mm−1 at V GS = 0 V and a low on-resistance of 4.3 ± 0.15 Ω mm for the optimized AlN/GaN SL. The 2200 nm-thick AlN/GaN SL supports the growth of stress-free GaN heterostructure, which can reduce the insertion loss for sub-6 GHz radio frequency (RF) applications. This GaN HEMT structure based on SL buffer layer is suitable for low-frequency RF power applications.