Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET

This paper presents the two-dimensional (2-D) numerical simulation results of heavy-ion induced reverse drain current degradation and single-event burnout (SEB) in the 1.2-kV rated CoolSiC Trench metal-oxide-semiconductor field-effect transistor (MOSFET). The physics models employed in simulations and critical failure conditions were validated by the heavy-ion irradiation experiments of the commercially available 1.2-kV rated SiC planar-gate MOSFET devices. The CoolSiC Trench MOSFET was proven to behave comparative SEB performance compared with the SiC planar-gate MOSFET. The robustness of the CoolSiC Trench MOSFET with different single buffer layer (SBL) designs against a heavy ion was simulated. Furthermore, the SBL-CoolSiC Trench MOSFET with low carrier lifetime control was investigated. According to the simulation results, the severe degeneration failure tolerance increased to 800 V; the SEB failure tolerance could reach 900 V.