Study on the correlation of output current in each quadrant for a silicon-based quadrant detector in the bias voltage irradiated by laser

Silicon-based photodetector have become an important part in various laser applications. The influence in the process of laser interacted with a silicon-based quadrant detector include not only laser parameters, but also external circuit parameters. Using 1064nm millisecond pulsed laser to interact on one quadrant of a silicon-based quadrant detector, the output current of each quadrant of the silicon-based quadrant detector under different bias voltage is compared and studied. The research shows that, in the process of laser irradiation on a silicon-based quadrant detector, the change of output current in the quadrant where the laser beam is located can be divided into three stages: initial stage, maintenance stage and recovery stage. The output current in the maintenance stage decreases as time, and the output current in the recovery stage fluctuates. Combined with the change trend of output current in each quadrant, it is found that the phenomenon is related to the interaction between the quadrants. It is also found that the law between the output current and the bias voltage changes obviously in the maintenance stage and recovery stage with the increase of the bias voltage. The reason is that, the internal electric field increases with the bias voltage, and the influence on the output current increases.