Formation of Holes in Semiconductor Materials by Laser Microprocessing

The process of laser formation of microholes in semiconductor substrates using an EM-4452-1 laser processing unit with a pulse repetition rate of a picosecond laser from 10 to 300 kHz at a radiation energy of up to 10 mJ was investigated. The combination of high-speed movements of the laser beam by the galvanoscanner system and precise positioning of the processed material increases the efficiency of laser microprocessing and expands the functionality of the equipment.