Electric voltage redistribution effect in Schottky barrier structures based on Si under hydrostatic pressure

The paper presents the results of strain-effect studies in diode structures with Schottky barrier made on the basis of n-Si and n-Si with resistivities 102 - 105 Ohm·cm under all-round hydrostatic pressure. It is shown that as the resistivity of the base area of the structures increases, its rectifying properties worsens. It was found that the worse of the rectifying property of the surface barrier structures is not due to the presence of compensating impurities, but depends only on the resistance of the base area. In the Schottky barrier structures based on n - Si with resistivities ~104 and 105 Ohm·cm the potential barrier is almost not formed. For the first time it was found that in structures with Schottky barrier under all-round hydrostatic pressure there is high strain sensitivity due to redistributions of electric voltage between the contact and the base area.