Bipolar persistent photoconductivity in HgTe/CdHgTe double quantum well heterostructures and its application for reversible change in the conductivity type

We report a detailed study of the bipolar persistent photoconductivity in an HgTe/CdHgTe double quantum well (DQW), which can be a perspective for studying topological states in these structures. Photoconductivity spectra measurements in the range of 1.1–3.1 eV as well as transport measurements under different illumination conditions were performed at T = 4.2 K. Based on the results, the processes occurring in the structure under illumination and leading to a change in the carrier concentration in the DQW have been established. They include interband generation in the CdTe cap layer and in the CdHgTe barrier layer and electron transitions from the spin-split band in the CdHgTe barrier layer to the conduction band in the CdTe cap layer. The presence of the CdTe cap layer and the appropriate cadmium fraction in the CdHgTe barrier layers have been shown to be the main factors determining the key features of the spectra. Finally, we suggest an effective method of controlling the conductivity type of HgTe/CdHgTe structures using light with different wavelengths.