Single crystal growth of topological semimetals and magnetic topological materials

The topological materials have attracted much attention because of their novel physical properties, which not only serve as a platform for fundamental physics, but also demonstrate a significant potential for application in electronics. Research on topological materials is usually conducted in two ways. On one hand, new experimental phenomena and physical problems are continuously revealed in existing materials. On the other hand, new materials are discovered and the crystals are grown for further study. In a word, high quality crystals are very important for studies like quantum oscillations, angle resolved photoemission spectroscopy or scanning tunneling microscopy. In this paper, the classifications and developments of topological materials, including topological insulators, topological semimetals, and magnetic topological materials, are introduced. As usually employed growth methods in growing topological materials, flux and vapour transport methods are introduced in details. Other growth methods, such as Bridgman, float-zone, vapour deposition and molecular beam epitaxy methods, are briefly introduced. Then details on the crystal growth of some typical topological materials, including topological insulators/semimetals, high Chern number chiral topological semimetals and magnetic topological materials, are elaborated. Meanwhile, identification on crystal quality is of great importance, including the analysis on crystal composition and structure, which are also briefly introduced.