Simulation Study of Enhancement Mode β-Ga2O3 MOSFET with Ferroelectric Charge Storage Gate Stack Structure


 In this study, an enhancement-mode gallium oxide MOSFET with a ferroelectric charge storage gate stack structure is numerically investigated. The device is simulated from the aspects of traps and material parameters, physical models, and voltage sources. The device is found to be optimal in performance when the ferroelectric film thickness is 17 nm and the oxide layer thickness is 5 nm. The threshold voltage shifts from -0.2 V to 4.47 V after initialization, which makes the device transit from depletion mode to enhancement mode. Moreover, the reliability of device is studied from the aspects of repeated scanning and temperature characteristics to estimate the sensitivity of threshold voltage.