Design and Analysis of Charge Plasma-Based Vertical-Nanowire Tunnel FET for Biosensor

In the semiconductor industry, nanoscale devices have better ability to provide for biomolecules detection, but they face various problems during fabrication process, such as high doping concentration, random dopant fluctuation (RDF), higher production cost, low electrostatic control. To overcome these problems, charge plasma (CP) technique has been introduced by the formation of hafnium material at drain side and platinum material at source side with appropriate work-function. The proposed work charge plasma-based vertical-nanowire tunnel FET (CP-VNWTFET) has been designed and analyzed for biosensor application using different dielectric constant and gate underlap method by creating a cavity area under the gate metal. The sensitivity ([Formula: see text]) of biosensor is calculated in terms of change in drain-current ([Formula: see text]) and transconductance ([Formula: see text]) by immobilizing the biomolecules such as Urease, Keratin, Streptavidin, ChOX, Zein, Gluten using gate underlap and dielectric modulation technique. The performance parameters like subthreshold slope (SS), off-current ([Formula: see text]), on-current ([Formula: see text]), on/off current ratio ([Formula: see text]) of the CP-VNWTFET have also been observed while varying the neutral and charged biomolecules at various biased conditions. The device is simulated by using Silvaco ATLAS simulator. The proposed device has been found to be suitable for low power sensor design application.