A Type of SiC Photoconductive Switch With Both High Uniformity and High Absorption Rate

In order to make the SiC photoconductive switch have better synchronization of photoelectric response and improve the working life of the device, a mathematical model of ring total reflection structure is established based on SiC semiconductor material. The influence of structural parameters on the absorption rate and uniformity of the device is analyzed. Two sets of structural parameters with high absorption and uniformity are simulated, one of which has a high absorption of 91.41% and a uniformity of 69.35%, and the other has an absorption of 86.67% and a uniformity of 70.73%. Additionally, the compensation of the regions with less light distribution of the device can be achieved by adding reflectors.