Study of lateral junction drive-in after annealing in ion implanted HgCdTe

Lateral junction drive-in after annealing in an n on p medium wave HgCdTe was studied. A method through testing the current voltage characteristic of an adjacent injection area was used to directly measure the lateral junction drive-in. The experimental results showed that under a standard annealing condition, the lateral drive-in was about 0.5  μm. While the annealing conditions were 88% and 112% standard temperature, the lateral drive-in were 0 and 3.25  μm, respectively, which showed a strong relationship between temperature and lateral drive-in extent. A 2D diffusion model was developed to account for the temperature dependence of lateral junction drive-in. This work suggests a simple and effective method for lateral drive-in testing and provides a useful 2D model for simulation and optimization of HgCdTe junction formation.