GaN Memory Operational at 300 °C

The most commonly used memory cells, namely a 32-bit $\times10$ -bit read-only memory, a 1-bit 4-transistor static random-access memory, D latch, and D flip-flop (DFF), were demonstrated using high temperature (HT) GaN technology on a monolithically integrated GaN-on-Si platform and n-FET-only E/D-mode logic (E: enhancement, D: depletion). The memory cells exhibit stable operation at 300 °C. A maximum clock frequency of 36 MHz at 300 °C was estimated for the DFF using the measured setup time. To the best of the authors’ knowledge, the operational temperature of the reported prototypes represents the highest value for GaN memory, paving the way for the realization of robust mixed-signal systems operating at HT.