Stress analysis by finite element method stress for (ZrO2/SiO2)2 anti-reflector multi-layer deposited with ion-assisted electron-gun evaporation

The research proposal was used the electron-gun evaporation with ion-assisted deposition method to deposit zirconium dioxide (ZrO2) thin films on PET and PC flexible substrates. Then, the finite element method (FEM) with equivalent room temperature (ERT) could simulated the intrinsic stress of these AR multi-layer films. The self-made phase-shifting Moiré interferometer can verify the residual stress of these AR multilayer films. However, a polynomial fixing curvature was used to reduce the simulation error of intrinsic stress low to 1%. The residual stress of AR multilayer films deposited with electron-gun evaporation can be reduced to -279.3MPa.