Hydroxyl-induced stability and mobility enhancement for field effect transistor based on In2O3 nanofiber

In this work, In2O3 nanofibers were fabricated by electrospinning, and a field effect transistor (FET) based on In2O3 nanofibers was integrated. A hydroxyl-assisted strategy was proposed for both stability and performance enhancement for the FET. Hydrogen peroxide (H2O2) was added into a precursor solution for electrospinning. It is found that the stability of the FET is improved after H2O2 incorporation, while the mobility is decreased. Surprisingly, after UV irradiation, the FET with both high mobility and high stability was obtained. It is assumed that under UV irradiation, H2O2 is decomposed into highly reactive hydroxyl radicals (•OH), which contributes to the degradation of the polymer. XPS and FT-IR analysis verify that oxygen- and carbon-related defects can be removed through the hydroxyl-assistant strategy. Furthermore, the flexible FET based on In2O3 nanofibers with H2O2 addition and UV irradiation was fabricated on the PI substrate, and the high electrical performance is further demonstrated. This strategy makes it possible to fabricate the oxide nanofiber FET with both high mobility and high stability.