A study of wide band Zn1-xMgxO and (GaxIn1-x)2O3 thin films prepared by the spin coating method

This study presents a brief analysis of Zn1-xMgxO and (GaxIn1-x)2O3 thin films deposited on Si substrates by the spin coating method. The morphology and chemical composition of the prepared thin films were studied by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. The evolution of the crystal structure with a change in the film composition and the technological conditions for annealing after spin coating was studied by X-ray diffraction (XRD) analysis. The annealing atmosphere and temperature were optimized in terms of producing films with a stoichiometric composition and a high crystalline quality.