Bond Defects in Graphene Created by Ultralow Energy Ion Implantation

Ultralow energy (ULE) ion implantation is increasingly being applied to the modification of 2D materials, in particular, for substitutional doping and intercalation of graphene [1][2] . Implantation-induced defects, whether desired or not, have a strong impact on the properties of graphene [3] . While significant research has been devoted to vacancy-related defects, disorder induced by ion irradiation in the ULE limit, that is, for energies below the vacancy-formation threshold, remains poorly understood. Here, we focus on that regime and report the formation of defects from the breaking of C-C sp2 bonds and formation of C-substrate bonds The bond defect our understanding of disorder induced in graphene