Area Dependence of Effective Electromechanical Coupling Coefficient Induced by On-Chip Inductance in LiNbO3-Based BAW Resonators

To solve the problem of filter bandwidth in 5G communication, it is urgent to develop an acoustic resonator with a large effective electromechanical coupling coefficient (Keff2). In this paper, the dependence between the resonance area and the performance of the bulk acoustic wave (BAW) resonator is studied. The solidly mounted resonators (SMRs) based on 43° Y cut lithium niobate (LN) were fabricated by the wafer transfer technique. The on-chip inductor was integrated with the BAW resonator through a pad electrode. Resonators with different resonant areas were fabricated and tested. Finite element modeling (FEM) simulation of acoustic resonators and electromagnetic (EM) simulation of layout were carried out, respectively. The Modified Butterworth Van Dyke (MBVD) model was used to analyze the results, and simulation of the Mason model was adopted. The results show that the dependency relationship between the resonant area and the effective electromechanical coupling coefficient can be induced by on-chip inductance. In the resonant area range of 20 × 20 μm2~160 × 160 μm2, the Keff2 increases from 11.97% to 43.28%.