Investigation of a defect in the β-Ga2O3 substrate material from capacitance transients

The defect ∼0.8 eV below the conduction band edge of β-Ga2O3 wide bandgap semiconductor is investigated using the matched Arrhenius-equation projection technique that offers substantial improvement over the conventional deep level transient spectroscopy technique. An experimental technique is developed to extract activation energy Ea and attempt-to-escape frequency ν0 of defects bypassing both the rate-window treatment and the Arrhenius plot. Only raw capacitance transients in the time domain are needed with this technique. The capacitance transients are projected between the temperature and time domains as well as to Ea and ν0 domains. Extraction of Ea and ν0 is accomplished by matching the projected and experimental capacitance transients to each other.