Performance Evaluation of SiC-Based Two-Level VSIs with Generalized Carrier-Based PWM Strategies in Motor Drive Applications

Currently, silicon carbide (SiC) MOSFETs are several times higher in cost than the equivalent silicon (Si)-IGBTs; however, the gains in power conversion efficiency, simplification of thermal management, and energy savings in general bring the advantages of lower total cost of ownership. The implementation of discontinuous PWM (DPWM) techniques for controlling the motor drive brings further reductions for the semiconductor switching losses; however, most existing techniques have limited performance on the optimized clamping region, particularly at a low power factor, which is a common operation condition for motor drives employing the widely used V/f control, particularly at partial- or low-load conditions. This paper evaluates the performance of a SiC-based two-level voltage-source inverter (2L-VSI) motor drive operated with generalized carrier-based PWM methods. Theoretical analysis and experimental measurements are conducted in a 2.2 kW heatsink-less 2L-VSI prototype and induction machine, which demonstrates that the minimum switching losses DPWM (MSL-DPWM) is the most favorable solution in practice in terms of the achievable power conversion efficiency and harmonic distortions and also produces the least common-mode current, which is critical in motor drives.