Research on the self-supporting T-shaped gate structure of GaN-based HEMT devices


 In this paper, a self-supporting T-shaped gate (SST-gate) GaN device and process method using electron beam lithography are proposed. An AlGaN/GaN HEMT device with a gate length of 100 nm was fabricated by this method. The current gain cutoff frequency (fT) is 60 GHz, and the maximum oscillation frequency (fmax) is 104 GHz. The current collapse has improved by 13% at Static bias of (VGSQ, VDSQ) = (-8 V, 10 V) and gate manufacturing yield has improved by 17% compared to the traditional floating T-shaped gate (FT-gate) device.