Raman Study of the Diamond to Graphite Transition Induced by the Single Femtosecond Laser Pulse on the (111) Face

The use of the ultrafast pulse is the current trend in laser processing many materials, including diamonds. Recently, the orientation of the irradiated crystal face was shown to play a crucial role in the diamond to graphite transition process. Here, we develop this approach and explore the nanostructure of the sp2 phase, and the structural perfection of the graphite produced. The single pulse of the third harmonic of a Ti:sapphire laser (100 fs, 266 nm) was used to study the process of producing highly oriented graphite (HOG) layers on the (111) surface of a diamond monocrystal. The laser fluence dependence on ablated crater depth was analyzed, and three different regimes of laser-induced diamond graphitization are discussed, namely: nonablative graphitization, customary ablative graphitization, and bulk graphitization. The structure of the graphitized material was investigated by confocal Raman spectroscopy. A clear correlation was found between laser ablation regimes and sp2 phase structure. The main types of structural defects that disrupt the HOG formation both at low and high laser fluencies were determined by Raman spectroscopy. The patterns revealed give optimal laser fluence for the production of perfect graphite spots on the diamond surface.