text: Patent US7777599 - Methods and apparatus for controlling characteristics of a plasma - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsMethods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor,...http://www.google.com/patents/US7777599?utm_source=gb-gplus-sharePatent US7777599 - Methods and apparatus for controlling characteristics of a plasmaAdvanced Patent SearchPublication numberUS7777599 B2Publication typeGrantApplication numberUS 11/934,197Publication dateAug 17, 2010Filing dateNov 2, 2007Priority dateNov 2, 2007Fee statusPaidAlso published asUS20090140828Publication number11934197, 934197, US 7777599 B2, US 7777599B2, US-B2-7777599, US7777599 B2, US7777599B2InventorsSteven C. Shannon, Daniel J. Hoffman, Matthew L. Miller, Olga Regelman, Kenneth S. Collins, Kartik Ramaswamy, Kallol BeraOriginal AssigneeApplied Materials, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (14), Non-Patent Citations (1), Referenced by (6), Classifications (12), Legal Events (2) External Links: USPTO, USPTO Assignment, EspacenetMethods and apparatus for controlling characteristics of a plasma
  US 7777599 B2Abstract
  Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
  The present invention provides methods and apparatus for controlling the RF power distribution within a process chamber. The apparatus advantageously provides an adjustable tuning circuit that facilitates tuning the uniformity of the RF power distribution within the chamber. The adjustable tuning circuit may be part of a match circuit for matching the impedance of a plasma formed within the process chamber to that of an RF source generator that provides the RF power. In some embodiments, the adjustable tuning circuit facilitates coupling RF power to a plasma discharge through a terminated resonant wave structure with an adjustable tap point to provide a low voltage standing wave ratio (VSWR) match condition to the RF generator over a large range of plasma impedance conditions. The inventive apparatus and methods uses plasma boundary condition control to facilitate control of standing wave properties of a launched RF wave, thereby controlling plasma uniformity. The plasma boundary condition control is established at a location remote from the plasma and may be accomplished, for example, by resonating an electrode at a drive frequency and terminating the electrode with a controllable impedance to manipulate the standing wave generated by the electrode, thereby facilitating control of the standing wave characteristic typically generated in a single electrode, diode type reactor.
  Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5707486 *Jul 16, 1996Jan 13, 1998Applied Materials, Inc.Plasma reactor using UHF/VHF and RF triode source, and processUS6199505 *Feb 16, 1999Mar 13, 2001Anelva CorporationPlasma processing apparatusUS6270618 *Dec 4, 1998Aug 7, 2001Alps Electric Co., Ltd.Plasma processing apparatusUS6774570 *Feb 6, 2003Aug 10, 2004Anelva CorporationApplying radio frequency wave of first frequency to discharge space to ignite radio frequency discharge of process gas, applying another radio frequency wave of different frequency to discharge space with time lag after igniting dischargeUS6894245 *Oct 22, 2001May 17, 2005Applied Materials, Inc.Radio frequency plasma; magnetic generator; for semiconductorUS6894589 *Mar 19, 2002May 17, 2005Sumitomo Heavy Industries, Ltd.Radio frequency resonator and method for producing the sameUS7030335Dec 19, 2001Apr 18, 2006Applied Materials, Inc.overhead electrode has a reactance that forms a resonance with the plasma at an electrode-plasma resonant frequency which is at or near frequency of generatorUS7132618 *Feb 6, 2003Nov 7, 2006Applied Materials, Inc.MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionUS7186943 *Apr 12, 2005Mar 6, 2007Applied Materials, Inc.MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppressionUS7220937 *Jan 8, 2004May 22, 2007Applied Materials, Inc.Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contaminationUS20040168770Mar 5, 2004Sep 2, 2004Tokyo Electron LimitedControlling plasma capacitance; bias electrode support; radio frequency power source; electrodes separated by insulatorUS20060021580Jun 2, 2005Feb 2, 2006Tokyo Electron LimitedPlasma processing apparatus and impedance adjustment methodUS20080179011 *Apr 11, 2007Jul 31, 2008Collins Kenneth SPlasma reactor with wide process window employing plural vhf sourcesWO2002013225A2Aug 6, 2001Feb 14, 2002Andrej S MitrovicPlasma processing method and apparatus* Cited by examinerNon-Patent CitationsReference1Chabert, P. et al., "Inductive heating and E to H transitions in high frequency capacitive discharges," Plasma Sources Sci. Technol. 15 (2006) S130-S136.Referenced byCiting PatentFiling datePublication dateApplicantTitleUS8578879 *Jul 29, 2009Nov 12, 2013Applied Materials, Inc.Apparatus for VHF impedance match tuningUS8847495 *Sep 14, 2012Sep 30, 2014Lam Research CorporationMovable grounding arrangements in a plasma processing chamber and methods thereforUS8920597 *Mar 14, 2011Dec 30, 2014Applied Materials, Inc.Symmetric VHF source for a plasma reactorUS20110023780 *Jul 29, 2009Feb 3, 2011Applied Materials, Inc.Apparatus for vhf impedance match tuningUS20120043023 *Mar 14, 2011Feb 23, 2012Applied Materials, Inc.Symmetric vhf source for a plasma reactorUS20130134876 *Sep 14, 2012May 30, 2013Anthony de la LleraMovable grounding arrangements in a plasma processing chamber and methods therefor* Cited by examinerClassifications U.S. Classification333/227, 333/231, 333/230, 315/111.21International ClassificationH01P7/06, H05B31/26Cooperative ClassificationH01J37/32091, H05H1/0081, H01J37/32174European ClassificationH01J37/32M8J, H01J37/32M8B, H05H1/00A4Legal EventsDateCodeEventDescriptionJan 28, 2014FPAYFee paymentYear of fee payment: 4Nov 2, 2007ASAssignmentOwner name: APPLIED MATERIALS, INC., CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHANNON, STEVEN C.;HOFFMAN, DANIEL J.;MILLER, MATTHEW L.;AND OTHERS;REEL/FRAME:020059/0303;SIGNING DATES FROM 20071030 TO 20071031Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHANNON, STEVEN C.;HOFFMAN, DANIEL J.;MILLER, MATTHEW L.;AND OTHERS;SIGNING DATES FROM 20071030 TO 20071031;REEL/FRAME:020059/0303RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services