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  The module, which incorporates 16 SiC trench MOSFETs developed by ROHM, has been confirmed to operate at 600 V/1,000 A, and it has achieved high switching speeds on the order of tens of nanoseconds—a level of performance that cannot be reached with Si-IGBTs. Furthermore, the module can incorporate 1,200 V class devices and operate at high temperatures of 250C. In achieving these characteristics, ROHM and APEI have successfully developed a module that stands out among not only conventional Si-IGBT modules, but also the SiC modules being actively developed by other manufacturers in terms of both electrical and mechanical characteristics. The partners are aiming to begin shipping samples in 2012 for special applications, followed by commercialization after three to four years.
  In developing the APEI HT2000, APEI succeeded in creating a module with dramatically lower parasitic inductance by shrinking the module area and further optimizing its layout. By incorporating trench MOSFETs into the module, the partners also gained the ability to accommodate a 1,000 A class current, enabling on-resistance to be half that of conventional Si-IGBT modules. The design can achieve super-high-speed switching operation on the order of dozens of nanoseconds, which in turn reduces switching loss to one-third that of Si-IGBT modules. Furthermore, the companies were able to shrink module area by 30% while allowing drive operation at high temperatures (250C) not possible with Si-IGBT modules by using advanced materials. The module also offers user-selectable half-bridge, full-bridge, and series pin connectivity. Finally, it can accommodate all SiC devices developed by ROHM, allowing designs to be custom-tailored to customers' specifications.