text: IEEE Xplore: IEEE Transactions on Electron Devices - (	Volume 28 Issue 8 )
  Browse Journals & Magazines > IEEE Transactions on Electron ... Volume 28 Issue 8
  H. L. Grubin (2)
  G. C. Osbourn (1)
  R. K. Cook (1)
  Yong-Hoon Yun (1)
  Automatique et Mesures Electriques, E.R.A. Ecole Centrale de Lyon, Ecully, France (1)
  D. K. Ferry ; H. L. Grubin
  Publication Year: 1981, Page(s):903	- 904
  D. K. Ferry ; J. R. Barker ; H. L. Grubin
  Publication Year: 1981, Page(s):905	- 911
  Current technology has progressed rapidly and is pushing toward fabrication of submicron dimensioned devices. As this occurs, we expect that the temporal and spatial scales in these devices will become sufficiently small that the semiclassical approach to transport theory, as expressed by the Boltzmann equation, becomes of questionable validity. In developing a corrected transport equation from qu... View full abstract»
  Publication Year: 1981, Page(s):911	- 914
  Control of composition during the growth of compound semiconductors, especially by molecular beam epitaxy (MBE), makes possible the fabrication of heterostructures with composition varying on a space scale of order ten to one hundred lattice constants. These have distinctive physical properties with possibilities of device applications. This paper considers some structures consisting of parallel l... View full abstract»
  R. O. Grondin ; P. A. Blakey ; J. R. East ; E. D. Rothman
  Publication Year: 1981, Page(s):914	- 923
  This paper deals with the use of Monte Carlo experiments for investigating noise phenomena associated with hot carrier transport in semiconductors. In the first part of the paper procedures and problems associated with the design and interpretation of such experiments are discussed. The use of a Monte Carlo experiment is then demonstrated by estimating the velocity fluctuation spectrum of electron... View full abstract»
  H. Matsumoto ; K. Sawada ; S. Asai ; M. Hirayama ; K. Nagasawa
  Publication Year: 1981, Page(s):923	- 928
  The threshold voltage shift through the long-term stress is measured for IGFET's. The gate bias dependence shows that the hot electron trapping is affected strongly by the electric field in the gate insulator. The threshold voltage shift versus time is well explained with the theory modified by the effect of the trapped charge on the subsequent electron trapping. The effect of transistor dimension... View full abstract»
  M. Garrigues ; Y. Hellouin
  Publication Year: 1981, Page(s):928	- 936
  Experimental measurements of the probability of emission of hot electrons into the oxide of silicon-on-sapphire (SOS) MOS devices are presented for high doping levels. The experimental method is derived from the optically induced hot electron experiment as proposed by Ning. The dependence of the emission probability on device parameters and applied voltage is analyzed emphasizing the lucky electro... View full abstract»
  Publication Year: 1981, Page(s):937	- 940
  J. J. Rosenberg ; E. J. Yoffa ; M. I. Nathan
  Publication Year: 1981, Page(s):941	- 944
  The effects of boundary conditions on conduction in short samples are calculated numerically for nonballistic and ballistic cases. For the nonballistic case, the resistivity is substantially below the bulk value due to spillover from N+contacts even for samples which are several Debye lengths long. In the ballistic case, it is found that changing the boundary conditions strongly affects... View full abstract»
  Publication Year: 1981, Page(s):945	- 950
  A derivation of the potential and the current-voltage relation is given for collisionless (inertial) transport of electron carriers in high-mobility low effective-mass one-dimensional short space-charge limited semiconductor diodes. No instability for longitudinal fluctuations is found, but transverse spatial instabilities or current filament formation is predicted by minimum entropy production. T... View full abstract»
  The effects of both collisional drag and diffusion effects on the operation of GaAs n+-n-n+structures are determined using a momentum transport equation which includes velocity fluctuation effects. It is shown that diffusion effects are important in practical structures, and that previous interpretations of experimental results which claim to show "ballistic" transport can be... View full abstract»
  W. R. Curtice ; Yong-Hoon Yun
  This paper describes a new two-dimensional method for study of GaAs Schottky-barrier MESFET's. A modified form of the conduction current is used in which transport properties are described in terms of electron temperature rather than electric field. Nonequilibrium velocity effects such as velocity overshoot are included. Results for the one-dimensional GaAs diode and the two-dimensional GaAs MESFE... View full abstract»
  State-of-the-art GaAs MESFET'S exhibit an output power saturation as the input power is increased. Experiments indicated that this power saturation is due to the combined effects of forward gate conduction and reverse gate-to-drain breakdown. This reverse breakdown was studied in detail by performing two-dimensional numerical simulations of planar and recessed-gate FET's. These simulations demonst... View full abstract»
  Publication Year: 1981, Page(s):971	- 976
  A recent model for hot-electron MOS transistors [4], [5] is generalized for short-channel field-effect transistors. It is based on six to seven parameters for the carrier mobility under the influence of transverse and Iongitudinal electric fields, for the threshold voltage and its dependence on drain bias, and for a finite longitudinal field at pinch-off. Such important features of short-channel F... View full abstract»
  R. A. Kiehl ; G. C. Osbourn
  Publication Year: 1981, Page(s):977	- 983
  The use of hydrostatic pressure to study the physics of a GaAs MESFET is reported for the first time. Two aspects of the physics of conventional 1-µm gate structures are focused upon: 1) the possible role played by hot-electron effects in the drain-current saturation and 2) the physical mechanism responsible for excess current. The pressure dependence of the low-field conductance, current-vol... View full abstract»