DSSCs are currently the most efficient third-generation (2005 Basic Research Solar Energy Utilization 16) solar technology available. Other thin-film technologies are typically between 5% and 13%, and traditional low-cost commercial silicon panels operate between 14% and 17%. This makes DSSCs attractive as a replacement for existing technologies in "low density" applications like rooftop solar collectors, where the mechanical robustness and light weight of the glass-less collector is a major advantage. They may not be as attractive for large-scale deployments where higher-cost higher-efficiency cells are more viable, but even small increases in the DSSC conversion efficiency might make them suitable for some of these roles as well.
There is another area where DSSCs are particularly attractive. The process of injecting an electron directly into the TiO is qualitatively different from that occurring in a traditional cell, where the electron is "promoted" within the original crystal. In theory, given low rates of production, the high-energy electron in the silicon could re-combine with its own hole, giving off a photon (or other form of energy) which does not result in current being generated. Although this particular case may not be common, it is fairly easy for an electron generated by another atom to combine with a hole left behind in a previous photoexcitation.
In comparison, the injection process used in the DSSC does not introduce a hole in the TiO, only an extra electron. Although it is energetically possible for the electron to recombine back into the dye, the rate at which this occurs is quite slow compared to the rate that the dye regains an electron from the surrounding electrolyte. Recombination directly from the TiO to species in the electrolyte is also possible although, again, for optimized devices this reaction is rather slow. On the contrary, electron transfer from the platinum coated electrode to species in the electrolyte is necessarily very fast.
As a result of these favorable "differential kinetics", DSSCs work even in low-light conditions. DSSCs are therefore able to work under cloudy skies and non-direct sunlight, whereas traditional designs would suffer a "cutout" at some lower limit of illumination, when charge carrier mobility is low and recombination becomes a major issue. The cutoff is so low they are even being proposed for indoor use, collecting energy for small devices from the lights in the house.
A practical advantage which DSSCs share with most thin-film technologies, is that the cell's mechanical robustness indirectly leads to higher efficiencies at higher temperatures. In any semiconductor, increasing temperature will promote some electrons into the conduction band "mechanically". The fragility of traditional silicon cells requires them to be protected from the elements, typically by encasing them in a glass box similar to a greenhouse, with a metal backing for strength. Such systems suffer noticeable decreases in efficiency as the cells heat up internally. DSSCs are normally built with only a thin layer of conductive plastic on the front layer, allowing them to radiate away heat much easier, and therefore operate at lower internal temperatures.