Although direct bandgap semiconductors such as GaAs or GaN are most easily examined by these techniques, indirect semiconductors such as silicon also emit weak cathodoluminescence, and can be examined as well. In particular, the luminescence of dislocated silicon is different from intrinsic silicon, and can be used to map defects in integrated circuits.
Recently, cathodoluminescence performed in electron microscopes is also being used to study surface plasmon resonances in metallic nanoparticles. Surface plasmons in metal nanoparticles can absorb and emit light, though the process is different from that in semiconductors. Similarly, cathodoluminescence has been exploited as a probe to map the local density of states of planar dielectric photonic crystals and nanostructured photonic materials.