Both sphalerite and wurtzite are intrinsic, wide-bandgap semiconductors. These are prototypical II-VI semiconductors, and they adopt structures related to many of the other semiconductors, such as gallium arsenide. The cubic form of ZnS has a band gap of about 3.54 electron volts at 300 kelvins, but the hexagonal form has a band gap of about 3.91 electron volts. ZnS can be doped as either an n-type semiconductor or a p-type semiconductor.