
English: 
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Please also subscribe and click on the little bell on the right
According to TrendForce's global DRAM memory chip market data for the second quarter of 2020, show
Samsung
SK Hynix
Micron's top three dynamic random storage DRAM manufacturers account for 94.6% of the global market
Ranked fourth is Nanya Technology, with a market share of only 3.2%
Other manufacturers share less than 1%
Obviously
In the memory chip market, the top three major manufacturers have formed a strong monopoly position
The space left for other manufacturers is very small

Chinese: 
欢迎收看零零传媒
为保证您能第一时间收到本频道的更新
还请您订阅并点击右边的小铃铛
根据TrendForce公布的2020年二季度全球DRAM内存芯片市场数据显示
三星
SK海力士
美光这前三家动态随机存储DRAM大厂占据了全球市场94.6%的份额
排名第四的则是南亚科技，市场份额仅3.2%
其他的厂商份额均不到1%
显然
在内存芯片市场，头部的三家大厂已经形成了强势的垄断地位
留给其他厂商的空间非常小

Chinese: 
歡迎收看零零傳媒
為保證您能第一時間收到本頻道的更新
還請您訂閱並點擊右邊的小鈴鐺
根據TrendForce公佈的2020年二季度全球DRAM內存芯片市場數據顯示
三星
SK海力士
美光這前三家動態隨機存儲DRAM大廠佔據了全球市場94.6%的份額
排名第四的則是南亞科技，市場份額僅3.2%
其他的廠商份額均不到1%
顯然
在內存芯片市場，頭部的三家大廠已經形成了強勢的壟斷地位
留給其他廠商的空間非常小

English: 
This means that they are expected to surpass Vietnam and Asia in the future
Become the world's fourth largest DRAM chip factory
In addition
Changxin Storage is expected to launch 17nm process DRAM chips in 2021
However, the current domestic DRAM manufacturer Hefei Changxin's production capacity is rapidly increasing
Expected at the end of this year
Hefei Changxin’s production capacity may exceed 70,000 wafers/month
According to the learned information
At present, Nanya Technology's DRAM production capacity is about 71,000 pieces/month
This also makes Hefei Changxin expected to challenge Nanya Technology
Become the world's fourth largest DRAM manufacturer
of course
This is just from the perspective of capacity
After all, production capacity is not equal to actual shipments
data shows that
At present, Changxin's mass production is mainly DDR4 with 19nm process

Chinese: 
這意味著他們未來有望超越南亞
成為全球第四大DRAM芯片廠
此外
預計長鑫存儲將在2021年推出17nm工藝DRAM芯片
不過，目前國產DRAM廠商合肥長鑫的產能正在快速拉升
預計今年底
合肥長鑫的產能就有可能超過7萬片晶圓/月
根據了解到的信息顯示
目前南亞科技的DRAM產能大約在7.1萬片/月
這也使得合肥長鑫有望挑戰南亞科技
成為全球第四大DRAM廠商
當然
這只是從產能上來看
畢竟產能不等於實際出貨
資料顯示
目前長鑫量產的主要是19nm工藝的DDR4

Chinese: 
这意味着他们未来有望超越南亚
成为全球第四大DRAM芯片厂
此外
预计长鑫存储将在2021年推出17nm工艺DRAM芯片
不过，目前国产DRAM厂商合肥长鑫的产能正在快速拉升
预计今年底
合肥长鑫的产能就有可能超过7万片晶圆/月
根据了解到的信息显示
目前南亚科技的DRAM产能大约在7.1万片/月
这也使得合肥长鑫有望挑战南亚科技
成为全球第四大DRAM厂商
当然
这只是从产能上来看
毕竟产能不等于实际出货
资料显示
目前长鑫量产的主要是19nm工艺的DDR4

Chinese: 
LPDDR4以及LPDDR4X芯片，獲得了光威、威剛科技、江波龍FORESEE等存儲品牌廠商的採用
不過
在動態隨機存儲DRAM技術上
長鑫存儲相比三星等一線DRAM廠商的技術要落後2到3年時間
所以快速提陞技術水平也是長鑫存儲在DRAM市場站穩腳跟的關鍵
根據今年7月初，安徽省發布的《重點領域補短板產品和關鍵技術攻關任務揭榜工作方案》
文件顯示
希望2-3年內解決一些關鍵技術瓶頸
其中
在內存技術方面
要求推進低功耗
高速率
　　
　　
LPDDR5
DRAM產品開發
要面向中高端移動、平板及消費類產品DRAM
存儲芯片自主可控需求
研發先進低功耗高速率LPDDR5產品並實現產業化
依托DRAM 17nm及以下工藝，攻關高速接口技術

English: 
LPDDR4 and LPDDR4X chips have been adopted by storage brand manufacturers such as Guangwei, ADATA Technology, Longsys FORESEE, etc.
but
In dynamic random storage DRAM technology
Changxin Storage is 2 to 3 years behind the technology of first-tier DRAM manufacturers such as Samsung
Therefore, the rapid improvement of technical level is also the key to Changxin Storage to gain a foothold in the DRAM market
According to the "Work Plan for Revealing the List of Key Fields to Make Up for Shortcoming Products and Key Technology Tasks" issued by Anhui Province in early July this year
File display
Hope to solve some key technical bottlenecks within 2-3 years
among them
In terms of memory technology
Demand to promote low power consumption
High rate
　　
　　
LPDDR5
DRAM product development
To target mid-to-high-end mobile, tablet and consumer products DRAM
Memory chip independent controllable demand
Develop advanced low-power high-rate LPDDR5 products and realize industrialization
Relying on DRAM 17nm and below process, research on high-speed interface technology

Chinese: 
LPDDR4以及LPDDR4X芯片，获得了光威、威刚科技、江波龙FORESEE等存储品牌厂商的采用
不过
在动态随机存储DRAM技术上
长鑫存储相比三星等一线DRAM厂商的技术要落后2到3年时间
所以快速提升技术水平也是长鑫存储在DRAM市场站稳脚跟的关键
根据今年7月初，安徽省发布的《重点领域补短板产品和关键技术攻关任务揭榜工作方案》
文件显示
希望2-3年内解决一些关键技术瓶颈
其中
在内存技术方面
要求推进低功耗
高速率
　　
　　
LPDDR5
DRAM产品开发
要面向中高端移动、平板及消费类产品DRAM
存储芯片自主可控需求
研发先进低功耗高速率LPDDR5产品并实现产业化
依托DRAM  17nm及以下工艺，攻关高速接口技术

Chinese: 
Bank Group架构设计技术、低功耗电源电压技术、片内纠错编码On Die ECC技术
完成低功耗高速率
LPDDR5
DRAM产品开发
而目前国内已经实现量产的DRAM内存芯片的国产厂商只有长鑫存储CXMT
而且长鑫存储也正是位于安徽省会合肥的企业
显然
这份文件上所提出的内存技术攻关要求，也正是针对长鑫存储提出的
而根据最新的信息显示
长鑫预计将在2021年完成17nm工艺DRAM芯片的研发
看来长鑫存储的进度正在进一步加快
此前曝光的长鑫存储的路线图也显示
接下来将会推出，基于10G3工艺的DDR4以及LPDDR4x
DDR5以及LPDDR5
还将推出基于10G5工艺的
DDR5
LPDDR5

Chinese: 
Bank Group架構設計技術、低功耗電源電壓技術、片內糾錯編碼On Die ECC技術
完成低功耗高速率
LPDDR5
DRAM產品開發
而目前國內已經實現量產的DRAM內存芯片的國產廠商只有長鑫存儲CXMT
而且長鑫存儲也正是位於安徽省會合肥的企業
顯然
這份文件上所提出的內存技術攻關要求，也正是針對長鑫存儲提出的
而根據最新的信息顯示
長鑫預計將在2021年完成17nm工藝DRAM芯片的研發
看來長鑫存儲的進度正在進一步加快
此前曝光的長鑫存儲的路線圖也顯示
接下來將會推出，基於10G3工藝的DDR4以及LPDDR4x
DDR5以及LPDDR5
還將推出基於10G5工藝的
DDR5
LPDDR5

English: 
Bank Group architecture design technology, low power supply voltage technology, on-chip error correction coding On Die ECC technology
Complete low power consumption and high rate
LPDDR5
DRAM product development
At present, the only domestic manufacturer of DRAM memory chips that has achieved mass production in China is Changxin Storage CXMT
And Changxin Storage is also an enterprise located in Hefei, the capital of Anhui Province.
Obviously
The memory technology research requirements proposed in this document are also for Changxin Storage
According to the latest information
Changxin expects to complete the development of 17nm process DRAM chips in 2021
It seems that the progress of Changxin Storage is further accelerating
The previously exposed road map of Changxin Storage also shows
Next will be launched, DDR4 and LPDDR4x based on 10G3 process
DDR5 and LPDDR5
Will also launch based on 10G5 process
DDR5
LPDDR5

Chinese: 
以及
GDDR6
这里的10G3工艺应该指的就是17nm工艺
此外
在专利布局上
长鑫存储拥有奇梦达留下的1000多万份关于DRAM技术文件及2.8TB数据
这也是长鑫存储最初的技术来源之一
去年12月
长鑫存储与加拿大公司Quarterhill Inc.旗下的WiLAN Inc.联合宣布，就原内存制造商奇梦达开发的DRAM内存专利
长鑫存储与WiLAN全资子公司Polaris Innovations Limited达成专利许可协议和专利采购协议
依据专利许可协议
长鑫存储从Polaris获得了大量DRAM技术专利的实施许可
而这些专利来自Polaris于2015年6月从奇梦达母公司英飞凌购得的专利组合
今年4月

English: 
as well as
GDDR6
The 10G3 process here should refer to the 17nm process
In addition
On the patent layout
Changxin Storage has more than 10 million DRAM technical documents and 2.8TB data left by Qimonda
This is also one of the original technology sources of Changxin Storage
Last December
Changxin Storage and WiLAN Inc., a subsidiary of Canadian company Quarterhill Inc., jointly announced the DRAM memory patent developed by the original memory manufacturer Qimonda
Changxin Storage and Polaris Innovations Limited, a wholly-owned subsidiary of WiLAN, reached a patent license agreement and patent purchase agreement
According to patent license agreement
Changxin Storage has obtained a large number of DRAM technology patent implementation licenses from Polaris
These patents come from the patent portfolio purchased by Polaris from Qimonda parent company Infineon in June 2015.
This April

Chinese: 
以及
GDDR6
這裡的10G3工藝應該指的就是17nm工藝
此外
在專利佈局上
長鑫存儲擁有奇夢達留下的1000多萬份關於DRAM技術文件及2.8TB數據
這也是長鑫存儲最初的技術來源之一
去年12月
長鑫存儲與加拿大公司Quarterhill Inc.旗下的WiLAN Inc.聯合宣布，就原內存製造商奇夢達開發的DRAM內存專利
長鑫存儲與WiLAN全資子公司Polaris Innovations Limited達成專利許可協議和專利採購協議
依據專利許可協議
長鑫存儲從Polaris獲得了大量DRAM技術專利的實施許可
而這些專利來自Polaris於2015年6月從奇夢達母公司英飛凌購得的專利組合
今年4月

Chinese: 
長鑫存儲又與美國半導體公司Rambus Inc.藍鉑世簽署了專利許可協議
獲得了大量的DRAM技術專利
根據雙方的協議
長鑫存儲從藍鉑世獲得了大量DRAM技術專利的實施許可
除了收購大量DRAM技術專利之外
長鑫存儲通過自主研發也儲備了很多的DRAM技術專利
特別需要指出的是
奇夢達的DRAM技術主要以溝槽式DRAM技術為主
而當前
美麗的光芒
三星等DRAM大廠都採用的是堆棧式技術
在DRAM的製造中
以電容定義的方法區分，主要分為堆棧式Stack和深溝槽式Trench電容器兩大類型
溝槽式DRAM的電容在柵極下方，堆棧式DRAM的電容器則在柵極上方

English: 
Changxin Storage has signed a patent license agreement with Rambus Inc., a US semiconductor company.
Obtained a large number of DRAM technology patents
According to the agreement between both parties
Changxin Storage has obtained a large number of DRAM technology patent implementation licenses from Lambeth
In addition to acquiring a large number of DRAM technology patents
Changxin Storage also reserves a lot of DRAM technology patents through independent research and development
What needs to be pointed out is
Qimonda's DRAM technology is mainly based on trench DRAM technology
And currently
Beautiful light
Samsung and other major DRAM manufacturers use stacked technology
In the manufacture of DRAM
It is distinguished by the method of capacitance definition, which is mainly divided into two types: Stack type and deep trench type Trench capacitor
The capacitance of trench DRAM is below the gate, and the capacitor of stacked DRAM is above the gate

Chinese: 
长鑫存储又与美国半导体公司Rambus Inc.蓝铂世签署了专利许可协议
获得了大量的DRAM技术专利
根据双方的协议
长鑫存储从蓝铂世获得了大量DRAM技术专利的实施许可
除了收购大量DRAM技术专利之外
长鑫存储通过自主研发也储备了很多的DRAM技术专利
特别需要指出的是
奇梦达的DRAM技术主要以沟槽式DRAM技术为主
而当前
美光
三星等DRAM大厂都采用的是堆栈式技术
在DRAM的制造中
以电容定义的方法区分，主要分为堆栈式Stack和深沟槽式Trench电容器两大类型
沟槽式DRAM的电容在栅极下方，堆栈式DRAM的电容器则在栅极上方

Chinese: 
是這兩種DRAM最大的差異
在溝槽式DRAM的製造中
必須先在基板蝕刻出溝槽
然後在溝槽中沉積出介電層
以形成電容器
然後在電容器上方再製造出柵極
構成完整的DRAM單元Cell
溝槽式DRAM工藝最大的技術挑戰有三點
一是隨著製程工藝的持續推進
線寬越來越細
溝槽的寬深比跟著增加
如何蝕刻出這種溝槽，是相當大的技術挑戰
其次
在進行沉積工藝時
由於溝槽的開口越來越細
要在溝槽裡面沉積足夠的介電材料，形成容值夠高的電容器，也越來越難
第三
隨著採用埋入式字線結構的
DRAM芯片的製程微縮，字線的結構也在不斷縮小
同時
電子遷移率衰減和飽和速度限制了驅動電流的提高
器件性能的改善變得非常困難

English: 
Is the biggest difference between these two DRAMs
In the manufacture of trench DRAM
The trench must be etched in the substrate first
Then a dielectric layer is deposited in the trench
To form a capacitor
And then fabricate the gate above the capacitor
Form a complete DRAM cell Cell
The biggest technical challenge of trench DRAM process has three points
First, as the process continues to advance
The line width is getting thinner
The aspect ratio of the groove increases
How to etch such trenches is a considerable technical challenge
Secondly
During the deposition process
As the opening of the groove gets thinner
It is becoming more and more difficult to deposit enough dielectric material in the trench to form a capacitor with high enough capacitance.
third
With the use of buried word line structure
The manufacturing process of DRAM chips is shrinking, and the structure of word lines is also shrinking
Simultaneously
Electron mobility decay and saturation speed limit the increase in drive current
Improvement of device performance becomes very difficult

Chinese: 
是这两种DRAM最大的差异
在沟槽式DRAM的制造中
必须先在基板蚀刻出沟槽
然后在沟槽中沉积出介电层
以形成电容器
然后在电容器上方再制造出栅极
构成完整的DRAM单元Cell
沟槽式DRAM工艺最大的技术挑战有三点
一是随着制程工艺的持续推进
线宽越来越细
沟槽的宽深比跟着增加
如何蚀刻出这种沟槽，是相当大的技术挑战
其次
在进行沉积工艺时
由于沟槽的开口越来越细
要在沟槽里面沉积足够的介电材料，形成容值够高的电容器，也越来越难
第三
随着采用埋入式字线结构的
DRAM芯片的制程微缩，字线的结构也在不断缩小
同时
电子迁移率衰减和饱和速度限制了驱动电流的提高
器件性能的改善变得非常困难

English: 
By comparison
Stacked DRAM does not have the above problems
therefore
As the process node moves forward
There are fewer and fewer adopters of trench DRAM
This also means that Changxin stores
The DRAM process node is advanced from the current 19nm to 17nm
Even more advanced processes must solve these problems
It is worth noting that
Previously exposed information display
Changxin Storage has applied for an invention patent named Semiconductor Memory Device Structure and Its Manufacturing Method
The invention provides a semiconductor storage device structure and a manufacturing method thereof
Used to solve the problem that the improvement of the performance of dynamic random storage DRAM chips in the prior art is becoming more and more difficult
According to reports
In the structure of the semiconductor memory device designed by the invention, two buried word line structures are respectively arranged on the silicon germanium relaxation layer
Fill the active area in the trench
Through this design

Chinese: 
相较之下
堆栈式DRAM则没有上述问题
因此
随着工艺节点越往前推进
沟槽式DRAM的采用者越来越少
这也意味着长鑫存储的
DRAM工艺节点由目前的19nm推进到17nm
甚至更先进的制程就必须要解决这些问题
值得注意的是
此前曝光的信息显示
长鑫存储已经申请一项名为半导体存储器件结构及其制作方法的发明专利
该发明提供了一种半导体存储器件结构及其制作方法
用于解决现有技术中动态随机存储DRAM芯片性能的改善越趋困难的问题
据介绍
该发明设计的半导体存储器件的结构中，是将两条埋入式字线结构分别设置在锗硅弛豫层
填充沟槽内的有源区中
通过这种设计

Chinese: 
相較之下
堆棧式DRAM則沒有上述問題
因此
隨著工藝節點越往前推進
溝槽式DRAM的採用者越來越少
這也意味著長鑫存儲的
DRAM工藝節點由目前的19nm推進到17nm
甚至更先進的製程就必須要解決這些問題
值得注意的是
此前曝光的信息顯示
長鑫存儲已經申請一項名為半導體存儲器件結構及其製作方法的發明專利
該發明提供了一種半導體存儲器件結構及其製作方法
用於解決現有技術中動態隨機存儲DRAM芯片性能的改善越趨困難的問題
據介紹
該發明設計的半導體存儲器件的結構中，是將兩條埋入式字線結構分別設置在鍺矽弛豫層
填充溝槽內的有源區中
通過這種設計

Chinese: 
弛豫侧壁会对其内的有源区产生应力
以提高沟道内部电子的迁移率
进而提高器件性能
同时
在该发明中
还巧妙的设计了锗硅渐变缓冲层
及锗硅弛豫层的锗硅比例，可以有效提高锗硅弛豫层的质量
并藉以提高外延硅外延层的生长质量
可以说
长鑫存储在继承了奇梦达的
沟槽式动态随机存储DRAM技术的同时
也进行了新的技术创新和改进
有效克服了现有沟槽式DRAM技术中的种种缺点
并且使该DRAM具高度产业利用价值
根据资料显示
合肥长鑫集成电路制造基地项目总投资超过2200亿元
选址位于合肥空港经济示范区
占地面积约15.2平方公里
由长鑫12吋存储器
晶圆制造基地
空港集成电路配套产业园

Chinese: 
弛豫側壁會對其內的有源區產生應力
以提高溝道內部電子的遷移率
進而提高器件性能
同時
在該發明中
還巧妙的設計了鍺矽漸變緩衝層
及鍺矽弛豫層的鍺矽比例，可以有效提高鍺矽弛豫層的質量
并藉以提高外延硅外延层的生长质量
可以說
長鑫存儲在繼承了奇夢達的
溝槽式動態隨機存儲DRAM技術的同時
也進行了新的技術創新和改進
有效克服了現有溝槽式DRAM技術中的種種缺點
並且使該DRAM具高度產業利用價值
根據資料顯示
合肥長鑫集成電路製造基地項目總投資超過2200億元
選址位於合肥空港經濟示範區
佔地面積約15.2平方公里
由長鑫12吋存儲器
晶圓製造基地
空港集成電路配套產業園

English: 
Relaxed sidewalls will stress the active area inside
To increase the mobility of electrons in the channel
To improve device performance
Simultaneously
In this invention
Also cleverly designed the germanium silicon gradient buffer layer
And the ratio of silicon germanium to the silicon germanium relaxation layer, which can effectively improve the quality of the silicon germanium relaxation layer
And to improve the growth quality of epitaxial silicon epitaxial layer
It can be said
Changxin Store has inherited Qimonda’s
Simultaneously with trench dynamic random storage DRAM technology
Also carried out new technological innovations and improvements
Effectively overcome the shortcomings of the existing trench DRAM technology
And make the DRAM highly valuable for industrial use
According to the information
The total investment of Hefei Changxin Integrated Circuit Manufacturing Base Project exceeds 220 billion yuan
The site is located in Hefei Airport Economic Demonstration Zone
Covers an area of ​​about 15.2 square kilometers
From Changxin 12-inch memory
Wafer manufacturing base
Airport IC Supporting Industrial Park

Chinese: 
空港國際小鎮三個片區組成
其中，長鑫12吋存儲器晶圓製造基地項目是中國大陸第一個投入量產的DRAM
設計製造一體化項目
也是安徽省單體投資最大的工業項目
總投資約1500億元
空港集成電路配套產業園，位於基地以西
總投資超過200億元
合肥空港國際小鎮位於基地以北
規劃土地面積9.2平方公里
規劃總建築面積420萬平方米
總投資約500億元
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我們下次再會

Chinese: 
空港国际小镇三个片区组成
其中，长鑫12吋存储器晶圆制造基地项目是中国大陆第一个投入量产的DRAM
设计制造一体化项目
也是安徽省单体投资最大的工业项目
总投资约1500亿元
空港集成电路配套产业园，位于基地以西
总投资超过200亿元
合肥空港国际小镇位于基地以北
规划土地面积9.2平方公里
规划总建筑面积420万平方米
总投资约500亿元
感谢您收看零零传媒
你我的共鸣
真正的神交
如果您对本期节目的观点认同
请您务必点赞订阅分享
并在底部评论区发表您的高见
再次温馨提醒您
为保证您能第一时间收到本频道的更新
还请您订阅并点击右边的小铃铛
本期节目就到这里啦
我们下次再会

English: 
Three districts of Airport International Town
Among them, the Changxin 12-inch memory wafer manufacturing base project is the first DRAM put into mass production in Mainland China
Design and manufacturing integration project
It is also the largest single-investment industrial project in Anhui Province
The total investment is about 150 billion yuan
Airport IC supporting industrial park, located to the west of the base
The total investment exceeds 20 billion yuan
Hefei Airport International Town is located to the north of the base
The planned land area is 9.2 square kilometers
The planned total construction area is 4.2 million square meters
The total investment is about 50 billion yuan
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