1. Field of the Invention
The present invention relates to an inductor, and more particularly, to a low substrate loss inductor manufactured by semiconductor IC technologies.
2. Description of the Prior Art
Passive elements, such as inductors or transformers, are widely used in microwave or high frequency wireless communication circuits. With the progress of semiconductor IC technologies and the requirement of small-sized, low-cost, and highly integrated systems, passive elements are integrated gradually in a single chip. Inductive elements are generally designed on a substrate with high impedance or on a substrate without energy loss, such as, a gallium arsenide (GaAs) substrate, for obtaining high quality factor and high self-resonance frequency inductors. However, because of the high cost, a low impedance silicon substrate (resistivity from 0.01 to 10 ohm-cm) is generally used to reduce the chip cost.
Please refer to FIG. 1 to FIG. 3. FIG. 1 is a schematic diagram of a silicon substrate inductor 13 of the prior art. FIG. 2 is a cross-sectional diagram of the silicon substrate inductor 13 shown in FIG. 1 along line 2xe2x80x942. FIG. 3 is a schematic diagram of an equivalent circuit of the silicon substrate inductor 13 shown in FIG. 1. Ls and Rs represent the inductance and the resistance of the inductor 14 respectively, Cox is the parasitic capacitance between the inductor 14 and the substrate 10, and Csub and Rsub represent the parasitic capacitance and the resistance generated by the substrate 10. As shown in FIG. 1 and FIG. 2, the inductor 14 is formed by a spiral metal coil, and an insulation layer 12 is installed between the inductor 14 and the substrate 10 to isolate the inductor 14 and the substrate 10. Generally the material of the isolation layer is silica (SiO2). The inductor 14 comprises two ends, wherein the current flows in from one end and flows out from the other. If the current of the inductor 14 flows clockwise, a magnetic field that passes through the substrate 10 will be generated, therefore a counterclockwise image current (also called eddy current) 18 will be generated on the substrate 10. The image current 18 will result in energy loss.
Please refer to FIG. 4 to FIG. 6. FIG. 4 is a schematic diagram of a patterned ground shield (PGS) inductor 21. FIG. 5 is a cross-sectional diagram of the inductor 21 shown in FIG. 5 along line 5xe2x80x945. FIG. 6 is a schematic diagram of an equivalent circuit of the inductor 21 shown in FIG. 4. For simplifying description, same index numbers are used to indicate same elements in the figures. Because the image current 18 causes energy loss, a PGS 16 is formed by a polysilicon or a metal layer between the inductor 14 and the substrate 10 to avoid the energy loss as shown in FIG. 4 and FIG. 5. The banded conductive wires of the PGS 16 are separated by trenches and arranged orthogonal to the direction of current flow of the inductor 14 so that the image current 18 generated by the magnetic field of the inductor 14 can be avoided. Further the energy loss of the substrate 10 can be reduced and the quality factor of the inductor 14 can be increased. The PGS 16 can avoid the image current 18 generated by the magnetic field of the inductor 14. However, the distance between the inductor 14 and the PSG 16 is shortened, that enlarges the parasitic capacitance of the inductor 14, decreases the self-resonance frequency of the inductor 14, and reduces the frequency application range of the inductor 14. Because Cox enlarges, the parasitic capacitance of a PSG inductor is larger than the parasitic capacitance of a silicon substrate inductor of the prior art. Moreover, the self-resonance frequency is inversely proportional to the square root of the product of parasitic capacitance and inductance of the inductor 14, therefore the higher the parasitic capacitance and the inductance are, the less the self-resonance frequency of the inductor 14 is.
Thus it can be seen that in the silicon substrate inductor 13 of the prior art, the image current 18 generated by the magnetic field of the inductor 14 would cause energy loss that will reduce the quality factor of the inductor 14. Though the PGS 16 formed by a polysilicon or metal layer can avoid the image current 18 generated by the magnetic field of the inductor 14, it also reduces the distance between the inductor 14 and the PGS 16, that enlarges the parasitic capacitance of the inductor 14. The enlargement of the parasitic capacitance would decrease the self-resonance frequency of the inductor 14, and reduce the frequency application range of the inductor 14.
It is therefore a primary object of the claimed invention to provide a low substrate loss inductor manufactured by IC technologies to solve the above-mentioned problem.
According to the claimed invention, an inductor comprising a substrate, a plurality of P-type and N-type doping strips alternatively formed inside the substrate, an isolation layer formed on the substrate, and a metal coil formed on the isolation layer is provided. The isolation layer isolates the metal coil and the plurality of P-type and N-type doping strips, and the plurality of P-type and N-type doping strips is arranged orthogonal to the metal coil.
These and other objects of the present invention will no doubt become obvious to those of ordinary skill in the art after having read the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
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