The present invention relates to a vertically structured power semiconductor component having a semiconductor body of a first conductivity type, a first main surface and a second main surface opposite the first main surface. A body zone of a second conductivity type, opposite of the first conductivity type, is introduced into the first main surface. A zone of the first conductivity type, is provided in the body zone. A first electrode makes contact with the zone of the first conductivity type and with the body zone. A second electrode is provided on the second main surface, and a gate electrode, is disposed above the body zone and is separated from the latter by an insulating layer.
In semiconductor power components, it is desirable to carry the largest possible current through the smallest possible area. In order to optimize the channel width/channel length or area ratio, power semiconductor components are therefore built from a large number of cells connected in parallel, in each of which the current path runs in the vertical direction, i.e. from one main surface of the semiconductor body to its other main surface. In this way, all of the semiconductor material placed under the actual cell in question, i.e. as far as the back terminal placed on the other main surface, is used as an active volume.
It will be assumed below that the power semiconductor component is an n-channel power MOS field-effect transistor, in which the source and gate terminals are located on one main surface of the semiconductor body, the chip top, and the drain terminal is located on the other main surface of the semiconductor body, the chip bottom.
The ideas below, however, can also be applied readily to other power semiconductor components, for example insulated gate bipolar transistors (IGBT) etc.
A power semiconductor component receives the voltage applied to it through mutual depletion of neighboring p- and n-conductive regions by mobile charge carriers, so as to create a space charge zone. In an n-channel power MOS field-effect transistor, spatially fixed charges created in a p-conductive well hence find their xe2x80x9cmirror chargesxe2x80x9d primarily in a vertically adjacent n-conductive layer, which is normally produced by epitaxy. The maximum of the electric field always occurs at the pn junction between the p-conductive well and the semiconductor body. Electrical breakdown is reached when the electric field exceeds a material-specific critical field strength Ec: this is because multiplication effects then lead to the creation of free charge carrier pairs, so that the blocking-state current suddenly increases greatly. But since, as is know, charges are the sources of any electric field, this critical field strength Eo can be assigned an equivalent critical breakdown surface charge Qc according to the first Maxwell equation. For silicon, for example, Ec=2.0 . . . 3.0xc3x97105 V/cm and Qc1.3xe2x88x921.9xc3x971012 charge carriers cmxe2x88x922. Since each charge carrier has the charge of e (electronic charge=1.6xc3x9710xe2x88x9219 As), Qc can take values from 2.08xe2x88x923.04xc3x9710xe2x88x927 As.cmxe2x88x922. The exact value of Qc depends in this case on the level of the doping.
The voltage reduction in a power semiconductor component, which takes place in the cell array in the lower-lying volume of the semiconductor body, must also be defined toward its edge, a profile in the horizontal direction being desirable in this case. Elaborate surface-positioned equipotential structures are commonly employed in order to achieve this.
The breakdown response of power semiconductor components can be evaluated in static measurements. An xe2x80x9cavalanche testxe2x80x9d, however, in which the switching response is also tested in addition to the actual breakdown, is much more meaningful. In this case, different regions of the safe operating area (SOA) are run through during a test. The purpose of such measurements is to simulate the xe2x80x9cworst casexe2x80x9d for user applications. In order to comply with the various requirements, a power semiconductor component must, in particular, meet the below listed criteria.
First, during electrical breakdown, an impressed high current due to charge-carrier multiplication flows from the external circuit. In order to prevent destruction of the power semiconductor component, however, excessively high current densities should be avoided. Therefore, the breakdown current must be distributed as uniformly as possible across the semiconductor body, or chip. But this criterion can only be met if the actual cell array carries the major part of the breakdown current. The reason is that if the power semiconductor component breaks down in its edge structure at lower voltages than the cell array, this usually causes irreversible thermal damage to the semiconductor body, or chip. The difference in blocking voltage between the edge region and the cell array must hence be made large enough so that fabrication tolerances do not shift the breakdown towards the edge region. In general, it may hence be stated that the voltage strength of the edge region must be higher than that of the cell array.
Second, owing to fabrication tolerances, the electrical breakdown never takes place homogeneously across the entire semiconductor body, or chip. Instead, the breakdown is defined by the xe2x80x9cweakestxe2x80x9d cell. So in order to achieve homogenization across the cell array, the voltage at such weakest cells must become higher as the breakdown current grows, since other cells will then also enter breakdown and in turn xe2x80x9cshiftxe2x80x9d their voltage. This distributes the xe2x80x9cavalanche currentxe2x80x9d uniformly across the cell array. In standard power semiconductor components, the heating of the semiconductor material is normally sufficient to ensure a positive differential current/voltage response. Dynamic doping effects in which, for example, the effects of mobile charge carriers from the breakdown current are to be added to the background doping, can also facilitate such a characteristic.
In any case, the power semiconductor component should have a positive differential current/voltage response in the event of electrical breakdown.
Third, in MOS transistors, as is known, each cell contains a xe2x80x9cthree-layer systemxe2x80x9d which contains a source zone, a body zone and a drain zone, and can act as a parasitic bipolar transistor for holes created in breakdown. The base of this bipolar transistor is in this case formed by the p-conductive well. If this base then experiences a voltage drop in the region of about 0.7 V as a result of the hole current, then the bipolar transistor is switched on and draws more and more current without any further way of controlling it, until the power semiconductor component is finally destroyed. This behavior is ultimately due to the negative temperature/resistance curve for bipolar transistors. However, such effects can be counteracted by configuration precautions. One very effective way is to avoid crossover currents at the surface, i.e. to place the electrical breakdown as deeply and centrally as possible below each cell. In other words, parasitic bipolar effects should be avoided wherever possible.
It is accordingly an object of the invention to provide a vertically structured power semiconductor component that overcomes the above-mentioned disadvantages of the prior art devices of this general type, in which a simple configuration is used to ensure that any electrical breakdown reliably occurs in the cell array.
With the foregoing and other objects in view there is provided, in accordance with the invention, a vertically structured power semiconductor component. The power semiconductor components contains a semiconductor body of a first conductivity type that has a first main surface and a second main surface opposite the first main surface. A body zone of a second conductivity type opposite of the first conductivity type is introduced into the first main surface. A zone of the first conductivity type is disposed in the body zone. A first electrode makes contact with the zone and with the body zone. A second electrode is disposed on the second main surface. An insulating layer is disposed on the first main surface. A gate electrode is disposed above the body zone and is separated from the body zone by the insulating layer. An intersection of the semiconductor body and the body zone defines a pn junction. The semiconductor body has a layer thickness between the pn junction and the second main surface selected such that, when one of a maximum allowed blocking voltage and a voltage just less than this, is applied between the first electrode and the second electrode, a space charge zone created in the semiconductor body meets the second main surface before a field strength created by an applied blocking voltage reaches a critical value.
The object is achieved in the case of a vertically structured power semiconductor component of the type mentioned at the start, according to the invention, such that the layer thickness of the semiconductor body between the pn junction formed at the intersection of the semiconductor body and the zone of the other conductivity type and the second semiconductor surface is selected in such a way that, when a maximum allowed blocking voltage, or a voltage just less than this, is applied between the first and second electrodes, the space charge zone created in the semiconductor body meets the second main surface, or just touches it, before the field strength created by the applied blocking voltage reaches the critical value Ec.
This dimensioning rule for the layer thickness of the semiconductor body between the pn junction and the second main surface is based on the following ideas.
When the power semiconductor component is in the off state, if the voltage between, for example, the source and the drain is increased stepwise, then the space charge zone spreads ever further, starting from the pn junction between the p-conductive well and the drain zone, into the n-conductive region of the drain zone. If the space charge zone meets regions with crystal defects, or intrinsically conductive noncrystalline regions, then electron-hole pairs will be emitted by these regions and, according to the potential gradient, the holes will flow through the space charge zone to the first main surface, or front, and the electrons will flow to the second main surface, or back, of the semiconductor body. This effect increases the blocking voltage and is actually to be regarded as xe2x80x9cparasiticxe2x80x9d. If, however, the blocking-state current increases very strongly with a small voltage change, i.e. the space charge zone reaches a very extensive region with crystal defects, then this can be utilized for breakdown. This is precisely the effect which the present invention now exploits.
The layer thickness of the semiconductor body, i.e. ultimately the chip thickness, is selected in such a way that the space charge zone meets the metallized second main surface before the critical field strength Ec has yet been reached in the bulk of the semiconductor body. It is, however, sufficient per se if the space charge zone just touches the second main surface when the critical field strength is reached, or meets this surface when the latter has been exceeded very slightly. Holes are then emitted into the bulk of the semiconductor body by the second-electrode metallization provided on the second main surface, so that the conditions for xe2x80x9cpunch-throughxe2x80x9d are satisfied. The electrons associated with the holes then pass from the metallization of the second main surface, through the external circuitry, to the voltage source that applies the blocking voltage to the source and drain.
This punch-through breakdown does in fact lower the blocking voltage of the power semiconductor component. If the configuration is appropriate, however, numerous advantages that can optimize the avalanche behavior are obtained.
First, the breakdown takes place in a reliable and defined way on the second main surface, or back, of the power semiconductor component, i.e. xe2x80x9cfar awayxe2x80x9d from the parasitic bipolar transistors near the surface. Since the holes created in the breakdown follow the potential gradient, they flow at right angles to the first main surface, i.e. at right angles to the front of the chip. Near the first main surface, the electric field is distorted as a result of the p-conductive wells to such an extent that a xe2x80x9cfunnel effectxe2x80x9d occurs for the electric field toward the contact holes that are provided in the first main surface. This almost completely prevents any horizontally-flowing electric currents near the surface in the vicinity of the first main surface. Precautions that usually need to be taken against the parasitic bipolar effect in standard power semiconductor components therefore become unnecessary.
Second, by use of surface-positioned magneto-resistors, the space charge zone is drawn, usually at the edge of the semiconductor body, toward the first main surface, or front, and opens at the latest on a so-called xe2x80x9cchannel stopperxe2x80x9d into a front oxide provided on the main surface. By exploiting the punch-through effect, moreover, the breakdown is automatically established under the cell array since the space charge zone extends more deeply there, and already meets the metallization of the second main surface at smaller voltages before regions below the edge of the semiconductor body.
Third, the amplitude of the breakdown voltage is dictated primarily by the geometrical size xe2x80x9clayer thickness of the semiconductor bodyxe2x80x9d, or xe2x80x9cchip thicknessxe2x80x9d, rather than by the material-dependent critical field strength Ec as in the case of previous power semiconductor components. This provides advantages, above all, in the case of so-called compensation components whose breakdown voltage generally depends parabolically on the charge balance in the semiconductor bulk, i.e. on fabrication tolerances as well. Through exploitation of the punch-through effect, the breakdown is xe2x80x9cclampedxe2x80x9d here and this leads to flattening of the so-called compensation parabola, and hence to homogenization of the dependency of the breakdown on the material.
The vertically structured power semiconductor component according to the invention can be produced in a relatively simple way.
After the so-called front processing on the first main surface, the wafer with the individual chips, or semiconductor bodies, is thinned to a wafer thickness which, according to the configuration of the intended power semiconductor component, allows punch-through of the space charge zone to the back. To that end, it is possible to use thin wafer technologies as are known from the prior art (see the reference by T. Laska, M. Matschitsch, and K. Scholtz, titled xe2x80x9cUltrathin Wafer Technology For A New 600 V IGBTxe2x80x9d, ISRSD ""97, pages 361-364).
Although the thinning of a wafer entails additional costs, these can nevertheless be xe2x80x9cneutralizedxe2x80x9d. When unthinned wafers are used, it is necessary to position a heavily doped substrate below the high-impedance semiconductor volume that is used for the voltage reduction in the blocking case. This does not fulfill any necessary electrical function; it only serves, so to speak, as a support material that is intended to contribute as little as possible to the switch-on voltage in the on state, and may optionally be used as a field stop zone. However, such wafers are expensive since the layer that receives the voltage is applied on the support material by an elaborate epitaxy process. But this kind of low-impedance support material is no longer needed in thin wafer technology, so that it is possible to work with less costly substrate wafers.
Beside regions of the second main surface, i.e. the back regions, through which the space charge zone punch-through takes place and which therefore need to be doped relatively lightly (the so-called punch-through regions), it is also necessary to define areas that ensure good contact with the metallization, i.e. ones which have low impedance. Punch-through regions hence need to be provided in alternation with terminal regions.
The doping concentration for the punch-through regions is dictated by the doping of the semiconductor body, i.e. the substrate doping, or it may also be varied by surface-wide back implantation. The incorporation of a weak field stop layer may possibly be advantageous in order to increase the blocking voltage of the power semiconductor component (see German Patent DE 197 31 495 C2).
To define the low-impedance terminal regions, it is necessary to structure the second main surface. This may be done, for example, by implantation through a photoresist mask. By appropriately setting the xe2x80x9cterminal region/punch-through regionxe2x80x9d area ratio, it is possible to control the hole injection in punch-through breakdown and hence the current/voltage characteristic in breakdown. The homogenization behavior of the breakdown across the second main surface can hence be deliberately influenced, and the point on the current/voltage curve beyond which a negative differential response is obtained, the so-called xe2x80x9csnap-backxe2x80x9d point, can be optimized.
It was explained above that, in the event of punch-through breakdown, the space charge zone directly adjoins the metallization of the second main surface, which results in that it is necessary to use thin wafer technology. An alternative possibility, however, is to make the space charge zone punch through onto a p-doped layer on the second main surface instead of onto the metallization. The p-doped layer hence acts as a hole injector. With this method, according to the configuration of the p-doped layer, it is possible to adapt to thicker semiconductor bodies, or wafers. Unfortunately, a disadvantage with this approach is that, in the undepleted on state, the p-doped layer acts as a collector so that the power transistor behaves like an IGBT. In other words, parameters typical of a MOS transistor may become strongly affected.
In accordance with an added feature of the invention, the layer thickness of the semiconductor body has a specific sheet charge density [xcfx81]xcfx81F in a direction z between the pn junction and the second main surface such that:                     ∫        0        W            ⁢                        ρ          ⁢                      (            z            )                          ⁢                  xe2x80x83                ⁢                  ⅆ          z                      ≤          0.9      ⁢              q        c              ,xe2x80x83xcfx81F=∫xcfx81dF
in which xcfx81 is the volume charge density, Qc, the critical breakdown charge, denotes a critical value of the charge quantity Q at which the electrical breakdown is reached, said charge quantity Q being linked to said electric field strength E between said first electrode and said second electrode by the equations             ∫      0      W        ⁢                            ρ          F                ⁡                  (          z          )                    ⁢              xe2x80x83            ⁢              ⅆ        z              =  Q
and Poisson""s equation ∇E=4 xcfx80xcfx81.
In accordance with an additional feature of the invention, the semiconductor body has heavily doped terminal regions of the first conductivity type disposed at the second main surface.
In accordance with another feature of the invention, a further zone of the first conductivity type is disposed in a vicinity of the second main surface.
In accordance with a further feature of the invention, the semiconductor body has punch-through regions disposed between the heavily doped terminal regions, and a current/voltage characteristic in breakdown can be controlled through an area ratio between the heavily doped terminal regions and the punch-through regions.
In accordance with another added feature of the invention, the semiconductor body has an edge termination and a channel stopper is disposed in an area of the edge termination.
In accordance with another additional feature of the invention, a source magnetoresistor is disposed above the first main surface.
In accordance with another further feature of the invention, a compensation region of the second conductivity type is disposed below the body zone in the semiconductor body.
In accordance with a further added feature of the invention, the compensation region of the second conductivity type is produced by a plurality of epitaxy and implantation operations.
In accordance with a further additional feature of the invention, the compensation region of the second conductivity type is produced horizontally between the first main surface and the second main surface through the same implantation openings.
In accordance with a concomitant feature of the invention, the semiconductor body has an edge region and including vertical compensation areas of the second conductivity type disposed in the edge region.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a vertically structured power semiconductor component, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
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