This application claims priority to Japanese Patent Application Number JP2002-046393 filed Feb 22, 2002, which is incorporated herein by reference.
1. Field of the Invention
The present invention relates to a method of producing a semiconductor device, more particularly relates to a method of producing a semiconductor device having a gate electrode doped with an impurity at a high concentration.
2. Description of the Related Art
Due to the increased miniaturization of semiconductor chips, the degree of integration has been doubling every three years according to the scaling rule. Along with this, faster speeds and lower consumption of energy have been achieved. The transistors of semiconductor chips are being miniaturized by reduction of the size of the electrodes and reduction of the thickness of gate insulating films.
Transistors can be also miniaturized by controlling precisely the impurity profile of a channel formation region of the transistor or its vicinity to form a shallow junction. Miniaturization of transistors enables improvement of the drive capability of transistors and decrease of the parasitic capacitance etc.
Up to now, polysilicon doped with an impurity at a high concentration has been often used as an gate electrode. FIG. 1 is a cross-sectional view of a gate electrode made of doped polysilicon. As shown in FIG. 1, a silicon wafer 21 is separated into element formation regions by element isolation regions 22. A gate electrode 24 is formed on an element formation region of the silicon wafer 21 via a gate insulating film 23. For example, a silicon oxide film is formed above the gate electrode 24 and the silicon substrate 21 as an interlayer insulating film 25.
FIG. 2 is an enlarged view of a part of the gate electrode 24 of FIG. 1. Various types of heat treatment are conducted during the process for formation of a semiconductor chip. For example, when using p+-type polysilicon doped with boron (B) as the gate electrode 24, depending on the conditions of heat treatment conducted after doping the boron into the gate electrode 24, the boron in the gate electrode 24 will precipitate on the silicon oxide film of the interlayer insulating film 25 etc. (boron precipitation part 26) and the boron will diffuse in the silicon oxide film at a relatively high speed (boron diffusion path 27).
When an impurity diffuses from the gate electrode 24 to the interlayer insulating film 25 along with heat treatment, the part of the gate electrode 24 near the interface with the interlayer insulating film 25 becomes depleted. Due to this, the drive capability of the transistor is lowered and/or the work function (threshold of transistor) fluctuates.
Along with miniaturization of the gate electrodes, the problem described above of the outward diffusion of the impurity in the doped polysilicon gate electrode tends to become more prominent. When miniaturizing a gate electrode, the aspect ratio of the gate electrode increases. Due to this, the amount of diffusion of the impurity in the gate electrode from the side surfaces of the gate electrode to the insulating film increases. As a result, it becomes more difficult to prevent deterioration and/or fluctuation of the device performance.
The diffusion of the impurity from the side surfaces of the gate electrode is observed not only in the case of using a single layer of p+-type polysilicon as the gate electrode, but also in a gate electrode of polycide structure wherein a refractory (heat resistant) metal silicide layer is formed on p+-type polysilicon or in a gate electrode of a polymetal structure wherein a refractory metal or other metal layer is formed on p+-type polysilicon via a barrier metal.
Although the silicon oxide films are represented by the same composition (SiO2), the diffusion coefficient of boron is generally larger in the interlayer insulating film than in the gate oxide film. Therefore, the concentration of boron in the p+-type polysilicon gate electrode is apt to decrease particularly at the vicinity of the interface with the silicon oxide film of the interlayer insulating film.
In this case, the polysilicon at the vicinity of the surface or side surfaces of the gate electrode becomes depleted and the work function of p+-polysilicon fluctuates locally. Due to this, in a transistor using p+-type polysilicon as a gate electrode, the fluctuation of various characteristics, commencing with the threshold Vth, increases.
On the other hand, in the case of n+-type polysilicon gate electrodes doped with phosphorous (P), the phosphorous atoms in the gate electrode pile up at the interface with the silicon oxide film. Therefore, in this case too, the concentration of the impurity in the polysilicon decreases at the vicinity of the interface of the polysilicon and the silicon oxide film.
Of the above, the amount of the impurity leaking from the side surfaces of the gate electrode particularly changes depending on the gate length Lg and gate width Wg of each pattern of gate electrodes. Therefore, it cannot be controlled equally over the entire LSI. The amount of an impurity leaking from a gate electrode relatively increases along with miniaturization of the gate electrode. Particularly, when the gate length is 0.1 xcexcm or less, depletion of the gate electrode due to escape of an impurity becomes predominant. Therefore, the drive capability of current of a transistor does not improve even if the gate electrode is miniaturized (see Murakami et al., Technical Report of IEICE Information and Communication Engineers SDM 2001-48, pp. 25.)
Japanese Unexamined Patent Publication (Kokai) No. 10-303410 proposes, as a method of prevention of outward diffusion of an impurity in a gate electrode, a method of covering the entire gate electrode with a capping layer. FIG. 3 shows the structure of a gate electrode disclosed in the publication.
The structure of FIG. 3 is one wherein a silicon nitride film 28 (Si3N4 film) and side wall spacer 29 made of a silicon nitride film are provided as a capping layer. The silicon nitride film 28 and side wall spacer 29 are formed by low-pressure chemical vapor deposition (LP-CVD) or another method. According to this method, diffusion of an impurity from the top surface and side surfaces of a gate electrode can be prevented effectively.
However, according to the structure and method disclosed in the above Japanese Unexamined Patent Publication (Kokai) No. 10-303410, since the entire gate electrode is capped with a relatively thick silicon nitride film, the following problems arise. These make it difficult to apply this technique for all miniaturized devices of the next generation.
When capping a gate electrode with a relatively thick silicon nitride film, the stress of the silicon nitride film increases relatively along with miniaturization of the gate electrode. Due to the stress, depending on the circumstances, the gate electrode may peel off, the energy level of the interface with the gate insulating film may increase, or other phenomena may arise.
Also, to cap a gate electrode with a silicon nitride film, it is necessary to form a silicon nitride film over the entire surface, then remove part of the silicon nitride film by dry etching leaving only the silicon nitride film covering the gate electrode. This etching is performed anisotropically using the base silicon substrate as a stopper.
Since the etch selectivity of silicon nitride with respect to silicon is difficult to increase in principle, it is impossible to completely prevent etching of the base silicon while etching the silicon nitride film.
In recent years, as a transistor able to drastically decrease the junction capacitance, a transistor of an SOI structure has been produced. When forming the gate electrode described in Japanese Unexamined Patent Publication (Kokai) No. 10-303410 on an SOI having a thin silicon active layer, during a dry etching step of the silicon nitride film to process the capping layer, the base thin silicon active layer disappears or is etched in an unallowable amount. Therefore, the above described conventional method is difficult to apply to a device of a SOI structure.
Further, according to the structure and method described in Japanese Unexamined Patent Publication (Kokai) No. 10-303410, since the side surfaces of the gate electrode are completely covered by the silicon nitride film, the effective dielectric constant between the gate electrode and the impurity diffusion layer increases. As a result, the parasitic capacitance caused by a fringe capacitance between the gate electrode and the impurity diffusion layer increases.
An object of the present invention is to provide a method of producing a semiconductor device able to lower the stress of the insulating film covering the gate electrode, prevent outward diffusion of an impurity from the gate electrode, prevent consumption of the base semiconductor layer, and improve the device quality.
According to the present invention, there is provided a method of producing a semiconductor device comprising the steps of forming a gate insulating film on a substrate, forming a semiconductor layer or a conductive layer on the gate insulating film, diffusing an impurity in the semiconductor layer, processing the semiconductor layer or the conductive layer by etching to form a gate electrode of a predetermined pattern, forming a first insulating film covering a top surface and side surfaces of the gate electrode by a deposition method, preferably atomic layer deposition (ALD), controlling a film thickness at an atomic layer level, forming a second insulating film on the first insulating film, introducing an impurity in the substrate via the first and second insulating film to form a source/drain region by self-alignment with respect to the gate electrode, and forming an interlayer insulating film on the second insulating film for eliminating unevenness between the gate electrode and the substrate.
Preferably, an extension of the source/drain region is formed in the step of forming the source/drain region after forming the second insulating film. In this case, the method preferably further comprises the steps of forming a third insulating film on the second insulating film after forming the extension, etching back the third insulating film so as to leave the third insulating film only on side surfaces of the gate electrode to form a gate side wall spacer made of the third insulating film, and introducing an impurity in the substrate via the first and second insulating films to form the source/drain region by self-alignment with respect to the gate side wall spacer.
Preferably, a silicon-containing layer is formed as the semiconductor layer. In this case, the method further comprises the steps of removing the first and second insulating films on the source/drain region and on the gate electrode after forming the source/drain region and forming a metal silicide layer on the source/drain region and on the gate electrode. Preferably, as the substrate, an SOI (silicon on insulator or semiconductor on insulator) substrate comprised of a silicon substrate formed with a silicon active layer via a silicon oxide film is used and the source/drain region is formed in the silicon active layer.
Due to this, it becomes possible to decrease the influence of stress of the insulating film on the gate electrode and prevent outward diffusion of an impurity from the gate electrode to the interlayer insulating film. According to the ALD method, it is possible to control the thickness at an atomic layer level or molecular layer level and form an extremely thin insulating film of for example a layer of about two molecules thickness. Therefore, when forming for example a silicon nitride film by the ALD method on the surface of the gate electrode, the influence of stress of the silicon nitride film can be decreased compared with the case of forming a silicon nitride film by CVD or another method.
Also, when forming the gate side wall spacer in the present invention, the second insulating film becomes an etching stopper layer during etching of the third insulating film. Due to using a film having a sufficiently small etch selectivity with respect to the third insulating film as the second insulating film, damage of the semiconductor substrate or other base is prevented. Therefore, the present invention is particularly preferable for a transistor of an SOI structure wherein the source/drain region is formed in a thin silicon active layer.
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