1. Field
Example embodiments relate to multi-bit memory elements, memory devices including the same, and/or methods of manufacturing the same.
2. Description of the Related Art
Examples of non-volatile memory devices include a resistive random-access memory (RRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM), or the like. Among them, the RRAM is a resistive memory device which stores data based on a resistance change of a material. In the RRAM, the resistance of a resistance-change material is changed from a high-resistance state to a low-resistance state (also referred to as “ON state”) when a voltage applied to the resistance-change material is greater than, or equal to, a set voltage. The resistance of the resistance-change material is switched back to the high-resistance state (also referred to as “OFF state”) when a voltage applied to the resistance-change material is greater than, or equal to, a reset voltage.
Generally, a resistive memory device includes a storage node and a switching device. The storage node has a resistance-change material layer. The switching device is electrically connected to the storage node, and controls access of a signal to the storage node.
The need for high density and high performance of various nonvolatile memory devices, such as the resistive memory devices described above, are continuously increasing.
USPTO Backgrounds
USPTO Backgrounds