1. Field of the Invention
The present invention relates to flash memory arrays, and more particularly to a method for converging the threshold voltage distribution of memory cells in flash memory arrays after erase.
2. Description of the Related Art
A method of converging the threshold voltage distribution of memory cells after erase is typically provided in flash memory arrays by manufacturers. Converging threshold voltages after erase prevents leakage current from overerased cells from causing read and program errors. To facilitate understanding threshold convergence methods, components of flash memory cells and procedures for programming and erasing the memory cells are first described.
FIG. 1 shows a cross section of a typical flash EEPROM array cell 2. The cell 2 is formed on a substrate 4 having a source 6 and drain 8 provided adjacent to its surface. Separated from the substrate 2 by an oxide layer is a floating gate 10 which is further separated from a control gate 12 by an additional oxide layer.
To program a cell 2, a large positive voltage is typically established between the control gate 12 and drain 8. For instance, a typical control gate voltage V.sub.G may be set to 13 V while a drain voltage V.sub.D is set to 6 V and the source voltage V.sub.s is grounded. The large positive gate-to-drain voltage enables electrons to overcome an energy barrier existing between the substrate 2 and the oxide underlying the floating gate 10 enabling the electrons to be driven from the drain 8 onto the floating gate 10. The electrons stored on the floating gate 10 increase the cell threshold voltage (the gate-to-source voltage required for a cell to turn on or conduct).
To represent a data bit, the floating gate 10 is programmed to store a charge as described above. In a programmed state, the threshold voltage of cells is typically set at greater than 6.5 volts, while the threshold voltage of cells in the erased state is typically limited from 0.5 volts to 3.0 volts. To read a cell, a control gate voltage between the 3.0 and 6.5 volt range, typically 5 V, is applied. With 5 V applied to the gate, in a programmed state with a threshold above 6.5 V, a current will not conduct between the drain and source, but in an erased state with a threshold below 3.0 V a current will conduct.
To erase the cell 2, a large positive voltage from the source to gate is established. For instance, a typical control gate voltage V.sub.G may be set to -10 V while the source voltage V.sub.S is set to +5 V and the drain is floated. The large positive source-to-gate voltage enables electrons to, tunnel from the floating gate 10 reducing the threshold voltage of the cell.
FIG. 2 illustrates how memory cells of FIG. 1 are configured in an array 200. Drains of a column of memory cells are connected to one of bit lines BL0-BL2. Gates of a row of memory cells are connected to one of word lines WL0-WL2. Sources of all memory cells in a block of memory cells are typically connected together to form a source line SL. Power is supplied to the individual word lines, bit lines and source lines by a power supply 202 to control programming, erase and read operations.
In a flash memory array, all cells are typically erased simultaneously. Erasing of the memory cells is typically done by repeated applications of a short, approximately 10 msec, source-to-gate erase voltage, described above, applied to each of the cells over the source and word lines. After each application of the erase voltage, a read or verify gate-to-source voltage is applied to the memory cells of typically 3.2 V to 5.0 V. During verify, current is measured to assure all cells have thresholds below the 3.0 V limit required for an erased cell as described above. If a cell does not conduct current during verify, indicating its threshold is above the 3.0 V limit, additional erase pulses are applied until all cells conduct.
By continuing to apply erase pulses to cells which have been properly erased, a phenomena known as over-erasing occurs. Over-erase occurs because each application of an erase pulse removes electrons from the floating gate of memory cells, including those cells which have been properly erased. When too many electrons are removed, floating gates may become positively charged causing the overerased condition. With a memory cell overerased, its threshold becomes less than zero volts.
One problem caused by overerased cells is read errors. To read a given memory cell in an array such as in FIG. 2, a positive bit line voltage is applied to a selected column of cells and a positive word line voltage is applied to a selected row of cells with unselected word lines grounded. With a memory cell on the selected bit line overerased, having a threshold below zero volts, with its gate voltage grounded to zero volts the cell will conduct causing a false reading.
Another problem caused by overerased cells is leakage current during programming. As with reading, for programming, a positive bit line voltage is applied to a selected column of cells and a positive word line voltage is applied to a selected row of cells with unselected word lines grounded. With an overerased cell on the selected bit line, zero volts on its gate will cause it to conduct leakage current. The leakage current may overload the power supply current available on the selected bit line, especially if a charge pump is required in the power supply 202 to pump the bit line voltage above V.sub.cc during programming.
To prevent such read errors and current leakage during programming, a minimum threshold limit is placed on all cells, such as the 0.5 V limit discussed above. To provide a minimum threshold voltage limit for erased cells, a threshold convergence method must be applied. Several different convergence methods are employed by manufacturers.
One convergence method is described in a paper entitled "A Self-Convergence Erasing Scheme For A Simple Stacked Gate Flash EEPROM," by S. Yamada et al. (Yamada), IEEE Tech. Dig. IEDM 1991, pp 307-310. As disclosed in Yamada, self-convergence is performed by applying a source voltage of approximately 6 volts to erased memory cells while grounding gates and drains of the cells. The self-convergence results achieved in Yamada may also be achieved by applying the same voltage applied to the sources to the drains (henceforth referred to as drain disturb voltage) while grounding the sources.
To illustrate self-convergence, FIG. 3 plots the threshold voltages (Vt) for a flash memory cell as a function of drain disturb voltage application time with a different starting threshold voltage for each application. The x-axis represents the drain disturb time in milliseconds and the y-axis represents the threshold voltage of the memory cells. As shown in FIG. 3, threshold voltages that are above approximately 2 V, the threshold obtained when erased by ultraviolet (UV) light, remain unaffected by the drain disturb voltage. The effects of the drain disturb voltage cause the threshold voltages erased below the UV-erased threshold to converge to a steady-state threshold voltage 300 of approximately 0 V.
One problem associated with self-convergence as described in Yamada is that both avalanche-hot electron injection and avalanche-hot hole injection are utilized to converge the threshold voltages to a steady-state. Avalanche-hot hole injection to the gate is known to cause device degradation. Device degradation affects the longevity and reliability of the device.
FIG. 4 illustrates hot hole injection as compared to hot electron injection by showing an erase threshold distribution 400 along with a plot 402 showing convergence of threshold voltages to a steady-state. Region 410 represents memory cells with threshold voltages above the UV-erase threshold which do not converge when a drain disturb voltage is applied as shown by line 420. Region 412 represents memory cells that are injected with holes to the floating gate when the drain disturb voltage is applied to reduce their threshold to the steady-state threshold voltage 422. Region 414 represents memory cells that are injected with electrons to increase their threshold voltage to a steady-state threshold voltage 422.
Another problem associated with self-convergence as described by Yamada is that after convergence, a wide threshold distribution exists between converged thresholds and thresholds which do not converge, but remain above the UV-erase threshold.
A method of convergence which improves upon the self-convergence method of Yamada is disclosed in U.S. patent application Ser. No. 08/160,057 entitled "An Adjustable Threshold Voltage Conversion Circuit", by J. Chen, et al. (Chen) ,. filed Dec. 1, 1993. The convergence method of Chen reduces hot hole injection to prevent device degradation and tightens the threshold distribution after convergence.
In the convergence method of Chen, a drain disturb voltage is applied while grounding the sources, similar to Yamada. However, instead of grounding gates as in Yamada, Chen applies a more positive gate voltage to cause the threshold voltages to converge at a higher, more positive value.
FIG. 5 illustrates the effects of application of a more positive gate voltage during self-convergence by plotting threshold voltages as a function of drain disturb time as well as a function of different gate voltages. Three sets of data are represented in FIG. 5. A drain disturbed voltage Vd of 6.5 volts is applied to each of the three data sets. Data trace 502 is derived by applying 0 volts at the gate of the memory cells as in Yamada. Data trace 504 is derived by applying a gate voltage of 0.5 volts, and data trace 506 is derived by applying 1.0 volts at the gate. The data shows that there is essentially a direct relationship between the gate voltage V.sub.G and the steady state threshold voltage of cells which are converged.
FIG. 6 illustrates the effect of applying a gate voltage during self-convergence on hot hole injection by showing an erase threshold distribution 600 along with a plot 602 showing convergence of threshold voltages to a steady-state, similar to FIG. 4. A dashed line 622 shows the location of a steady-state threshold obtained by application of a gate voltage of 0 V to the threshold distribution 600. Line 620 shows the location of a steady-state threshold where a gate voltage of 1.0 V is applied during application of the drain disturb voltage. Region 614 of erase distribution 600 represents the region where electrons are injected into the floating gate to increase the threshold voltage to the steady-state threshold voltage. Region 612 of erase distribution 600 represents where holes are injected into the floating gate to decrease the threshold voltage to the steady-state threshold voltage. The number of electrons injected into the gate, region 614, is much larger than the number of holes injected into the gate, region 612. Comparing regions 612 and 614 of FIG. 6 with regions 412 and 414 of FIG. 4 indicates that the application of a more positive gate voltage V.sub.G during self-convergence, has substantially increased electron injection and has substantially reduced hole injection.
As shown in FIG. by line 620 as opposed to line 622, by applying a more positive gate voltage during self-convergence, the steady-state threshold voltage can be moved closer to the threshold of cells with thresholds above the UV-erase threshold to provide a tighter after erase threshold voltage distribution.
A problem with the convergence method of Yamada as well as Chen is that significant power is required for convergence. After erase, a significant number of overerased cells have a threshold voltage less than zero volts. When the drain disturb voltage is applied, with a gate voltage of zero volts the overerased cells will conduct. With cells conducting, additional current is necessary to maintain the drain disturb voltage. By increasing the gate voltage as disclosed in Chen, even more cells will conduct, thus further increasing the current required for the drain disturb voltage.
Chen suggested that if power is a concern, the power required could be reduced by performing convergence on a byte-by-byte basis rather than erasing larger portions of the array cells at one time. However, adding circuitry for selecting particular cells for byte-by-byte convergence is undesirable because of added complexity as well as additional space required for the circuitry. Further, the additional time required for converging only portions of the memory at a time as opposed to erasing the entire memory at once is undesirable.
Increasing the power supply is further undesirable. For providing a flash memory as a low power device, such as 3 V devices currently utilized with battery powered notebook computers, a charge pump may be required in a power supply, such as 202, to pump the voltage above 3 V during program and eirase. Requiring the charge pump size to be increased to overcome leakage current during convergence is undesirable.
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