Semiconductor devices are used in a large number of electronic devices, such as computers, cell phones, and others. Semiconductor devices comprise integrated circuits that are formed on semiconductor wafers by depositing many types of thin films of material over the semiconductor wafers, and patterning the thin films of material to form the integrated circuits. Integrated circuits include field-effect transistors (FETs) such as metal oxide semiconductor (MOS) transistors.
One of the goals of the semiconductor industry is to continue shrinking the size and increasing the speed of individual FETs. FinFETs not only improve areal density, but also improve gate control of the channel.
The on-resistance of conventional FinFET device may be limited by a number of factors. These include, for example, the channel density and the doping concentration of the drift region.
Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
USPTO Backgrounds
USPTO Backgrounds