1. Field of the Invention
The present invention relates a semiconductor memory device and more particularly, to a semiconductor memory device capable of adjusting an internal parameter after package molding.
2. Description of the Background Art
In recent years, requirements for not only a large capacity but also high speed of a semiconductor memory device have been piled up; an interfacing technique in a high frequency region largely exceeding 100 MHz has also been necessary in DRAM (Dynamic Random Access Memory). Under such circumstances, a possibility has been enhanced that variations in internal parameters of a chip caused by fluctuations in conditions for the fabrication process thereof exert adverse influences on an operation of a semiconductor memory device.
Especially, in a memory device with high speed, it has been important to reduce a variation in capacity added to a node (hereinafter referred to input capacitance as well) to which an external signal is input. Such a variation in input capacitance xcex94Cin leads to a change in delay between external signals caused when the signals are caught into the device. As a result, timings in generation of internal signals in the device in response to the external signals are different therebetween, and on this occasion, a possibility occurs that normal operation of the memory device cannot be performed in the entirety.
For example, in a memory device of a 100 MHz class, a precision of a level xcex94Cin=1.0 pF (1.0xc3x9710xe2x88x9212F) has been generally required with respect of a variation in input capacitance. With this level adjusted, an input capacitance has been sufficiently adjustable by fine tuning of a pattern of an aluminum wring layer following fabrication of a semiconductor chip. In memory device of a 800 MHz class, however, since timing specifications or setting-up and holding are strictly defined at a level of a system in which a DRAM is incorporated, a strict precision to a level xcex94Cin=50 fF (5.0xc3x9710xe2x88x9214F) is imposed on the input capacitance as requirement.
Adjustment of an input capacitance to such a strict precision is very hard to be achieved only by fine control of process conditions for the fabrication represented by pattern adjustment in a wring layer. This is because a variation in capacitance value caused by deformation such as of cable interconnects in resin encapsulation of a molding step cannot be neglected to satisfy a required precision; therefore, an input capacitance as designed is very hard to be achieved to such a level of precision.
Moreover, in a mas production stage, an input capacitance of each chip and an input capacitance at each pin of the chip are further varied by fluctuations in conditions for a fabrication process; therefore, control of variations in input capacitances has been very hard only by a design prior to the molding and control of the conditions for a fabrication process.
Furthermore, in a memory device requiring a high speed operation, a skew indicating a phase shift of an input/output signal from a reference clock has also been becoming an important specification.
FIG. 19 is a conceptual diagram representing a configuration performing data output in synchronism with a trigger clock.
In FIG. 19, for example, shown is a configuration in which data of 16 bits are output through 16 data terminals 200-0 to 200-15. Data output buffers 210-0 to 210-15 are provided correspondingly to the respective data terminals 200-0 to 200-15. The data output buffers output data to respective corresponding data terminals at a timing according to a trigger clock signal CLK transmitted from a clock buffer 220.
Since the clock buffer 220 is shared by a plurality of data output buffers, there arises a shift in data output timing between a data output buffer in the central section close to the clock buffer 220 (for example, 210-7 or 210-8) and a data output buffer far from the clock buffer 220 (for example, 210-0 or 210-15) due to a difference in delay in propagation of a trigger clock therebetween and thereby, a problem occurs since a phase shift referred to as skew is generated. In a DRAM operating at high speed, since a data output cycle becomes shorter, none of such a skew will be able to be neglected.
Moreover, while in DRAM, holding data is required to be executed by a refresh operation, a cycle in which a refresh operation is performed (hereinafter simply referred to as refresh cycle) is largely related to power consumption of the entire DRAM. While a refresh cycle is set to a time length shorter than a cycle in which data holding can be ensured in DRAM, the refresh cycle is, on the other hand, set as long as possible and thereby, reduction in power consumption can be realized. Hence, in a high frequency DRAM having a tendency of increasing power consumption, it is an important technique to set a proper refresh cycle.
A data holding characteristic of DRAM, however, alters between before and after package molding step; therefore, a prior art method in which a refresh cycle is set by fuse blowing based on a test result in wafer test conducted in a chip state has had difficult performing fine setting of a refresh cycle.
Furthermore, in a memory, a word structure showing the number of bits of data which can be simultaneously input/output in one time addressing has been generally determined before the package molding according to whether a wring pattern or bonding is present or absent.
FIGS. 20A and 20B are conceptual diagrams describing a prior art setting method for a word structure.
Referring to FIGS. 20A and 20B, a word structure is set according to whether coupling between a lead frame 230 coupled with a power source potential (ext.VCC) terminal 240 and a mode select terminal 250 are present or absent. In FIGS. 20A and 20B, shown are respective cases of no coupling and coupling between the mode select terminal 250 and the lead frame 230.
FIG. 21 is a circuit diagram representing a configuration of a mode select circuit generating a mode select signal according to a coupling state of a mode select terminal.
Referring to FIG. 21, a mode select circuit 260 includes P type MOS transistors 252 and 254 coupled in parallel between a power source potential ext.VCC and a node N0, an N type MOS transistor 256 coupled between the node N0 and a ground potential Vss, and an inverter 258 generating a mode select signal MSL according to a potential level of the node N0. A power-on reset signal/POR which is activated to L level for a prescribed period after power-on is input to the gate of the transistor 252. A mode select terminal 250 is coupled to the gate of the transistor 256.
Accordingly, as shown in FIG. 20A, when the mode select terminal 250 is not coupled to the lead frame 230 and in a floating state, the transistor 256 is not turned on, therefore, a potential level of the node NO goes to H level at a timing at which a power-on reset signal/POR is activated (to L level) and a mode select signal MSL is set to L level. Since the mode select signal MSL is input to the gate of the transistor 254, L level of the mode select signal MSL is latched by the inverter 258 and the transistor 254.
On the other hand, as shown in FIG. 20B, when a mode select terminal 250 is coupled with a lead frame 230, a transistor 256 is turned on; therefore, a mode select signal MSL is set to H level if a power-on reset signal/POR is finally deactivated (to H level) even after the power-on reset signal/POR is activated (to L level) for a prescribed period following power-on.
In such a way, a mode select signal is set to H level or L level according to the presence or absence, respectively, of coupling between the mode select terminal 250 and the lead frame 230. Hence, for example, when a signal level of a 2 bit mode select signal is defined using two mode select terminals, one of word structures of 22=4 kinds, for example, one of xc3x974 bits/xc3x978 bits/xc3x9716 bits/xc3x9732 bits can be used, while switching over the word structures.
Selection of such a coupling state between the mode select terminal 250 and the lead frame 230 has been generally determined prior to the package molding according to selection of whether or not wring is formed by master switching-over, or whether or not bonding is performed.
When a word structure is fixed prior to the package molding, however, in a product with a small number of bits in a word structure, an operation test time which is performed after the packaging cannot be reduced taking advantage of a so-called multi-bit test effect even in a case where a data bus width in the product device is large.
As described above, a requirement has occurred, especially in a high-speed operating memory device, that internal parameters such as an input capacitance, a skew, a refresh cycle, a word structure setting and others are adjusted from outside the mold package after execution of an operation test. In the prior art, such adjustment of internal parameters after package molding was performed by blowing an electric fuse which had been provided inside with a high potential signal applied externally.
By means of this method, however, since there is a requirement to additionally provide electric fuses, a burden occurs in aspects of layout area and cost.
It is an object of the present invention to provide a configuration of a semiconductor memory device capable of adjustment or alteration of an internal parameter after package molding without adding a special element such as an electric fuse to the device.
The present invention will be summarized that is directed to a semiconductor memory device including: a plurality of memory cells; a plurality of parameter adjustment terminals; an internal parameter control circuit; and an internal circuit.
Each of the plurality of memory cells has a capacitor for holding data. The plurality of parameter adjustment terminals can be input with signals from outside after package molding. The internal parameter control circuit is provided for adjustment of internal parameters of the semiconductor memory device from outside. The internal circuit operates based on internal parameters set according to signal levels of respective plural internal parameter control signals. The internal parameter control circuit includes a plurality of control signal generating units provided correspondingly to the respective plurality of parameter adjustment terminals and generating respective plural internal parameter control signals. Each of the plurality of control signal generating units includes a program element responding to a signal input to a corresponding one of the plurality of parameter adjustment terminals to make a non-volatile transition from a first state to a second state. The program element has a capacitor forming one of the plurality of memory cells. Each control signal generating unit not only sets a signal level of a corresponding one of the plurality of internal parameter control signals according to a state of the program element in response to turning-on of a power source for the semiconductor memory device, but also holds the signal level during turning-on of the power source. The internal circuit operates based on the internal parameters set according to the signal levels of the plurality of internal parameter control signals.
A major advantage of the present invention is accordingly in a capability that an internal parameter is adjusted in a non-volatile manner from outside a mold package by a program using a memory cell. As a result, product yield of a semiconductor memory device can be improved by a fine adjustment on the internal parameter without providing a special program element additionally.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
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