The present invention relates to a method for fabricating a semiconductor and, more particularly, to a method for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a polycide gate electrode.
In the prior art, a polycide, which is stacked with a polysilicon or a tungsten-silicide/polysilicon, has been used as a gate electrode of metal oxide semiconductor field effect transistor (MOSFET). However, as the density of semiconductor devices increases, a line width of gate electrode becomes narrower. So conventional electrode materials may not satisfy low resistance required in high-integrated devices. Accordingly, silicide-type materials such as TiSi2, CoSi2, VSi2, ZrSi2, NbSi2, MoSi2 and HfSi2 have been developed as a substitution for single polysilicon materials. As of now, titanium silicide (TiSi2) relatively well satisfies requirements for the gate electrode such as a low resistivity, a high melting point, an easiness of forming a thin layer and a line pattern, a thermal stability and so on. So, the titanium silicide (TiSi2) is considered to be remarkable.
FIGS. 1A to 1F are cross-sectional views illustrating a conventional MOSFET to which a titanium silicide is applied.
First, a gate oxide layer 2 is grown on a substrate 1 and a polysilicon layer 3 having a low resistivity is deposited on the gate oxide layer 2 by using the LPCVD (low-pressure chemical vapor deposition) method, and then a titanium layer 4 is deposited on the polysilicon layer 3, as shown in FIG. 1A.
Next, by performing a RTP (rapid thermal process) for a few seconds, in a nitrogen atmosphere and at a specific temperature, a titanium silicide layer 5 having a low resistivity is formed by a reaction between the titanium layer 4 and the polysilicon layer 3, as shown in FIG. 1B.
A mask oxide layer 6 is deposited on the titanium silicide layer 5, so that the titanium silicide layer 5 may be protected when sidewall spacers are formed by a following dry-etching process, as shown in FIG. 1C.
Subsequently, a gate electrode is patterned by applying mask and etching processes to the mask oxide layer 6, the titanium silicide layer 5, the polysilicon layer 3 and the gate oxide layer 2, as shown in FIG. 1D.
A screen oxide layer 7 is grown on the exposed substrate 1 by a thermal process, so that it may protect a damage to the substrate 1 when a source/drain region is formed by ion implantation, as shown in FIG. 1E.
Finally, the lightly doped source/drain region 8 is formed by a low-density ion implantation, as shown in FIG. 1F. Next, after forming sidewall spacers on the sidewall of gate, a heavily doped drain/source region is formed by a high-density ion implantation after the formation of a LDD (lightly doped drain) structure.
FIGS. 2A to 2C are cross-sectional views showing problems caused by the prior art. Referring to FIG. 2A, a titanium nitride layer 9, which is undesirable, is formed between the titanium silicide layer 5 and the mask oxide layer 6. The reason for the formation of the titanium nitride layer 9 is that the RTP (rapid thermal process) shown in FIG. 1B is performed in a nitrogen atmosphere. That is, the titanium nitride layer 9 is easily formed since titanium easily reacts with nitrogen. FIG. 2B shows another problem caused by the formation of the titanium nitride layer 9 shown in FIG. 2A. That is, when the screen oxide layer 7 is grown, the sidewalls of the gate electrode structure, which include a polysilicon/titanium-silicide, as well as the substrate 1 are simultaneously oxidized, thereby forming an abnormal oxide layer. At this time, since the titanium nitride layer 9 is very easily oxidized, a thick oxide layer 10, which is abnormally grown, is formed on the side of the titanium nitride layer 9. In particular, the LDD (lightly doped drain) region may have an abnormal ion-implantation profile since the thick oxide layer 10 acts as a barrier in performing the ion implantation, as shown in FIG. 2C.
It is, therefore, an object of the present invention to provide a method for fabricating an improved gate electrode of a MOSFET device.
In accordance with an aspect of the present invention, there is provided a method for fabricating a MOSFET device having a polycide gate to which a titanium silicide is applied, comprising the steps of sequentially forming a polysilicon layer on a gate insulating layer and a titanium layer in this order, forming a capping layer on the titanium layer and forming a titanium silicide layer by performing a rapid thermal process in nitrogen environment
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